Search Results (187)

Plant-derived proteins have been growing in interest for the design of innovative foods and ingredients following the trend of animal protein substitution. These proteins display interesting functional properties, including emulsifying, foaming, and gelling capacity. Unfortunately, commercially available plant protein ingredients often present limited functionality due to the modifications induced during production. In this study, ohmic heating (OH) was evaluated as a physical modification strategy to enhance the functionality of commercial pea protein (PP). PP dispersions were subjected to OH at 100 °C, 130 °C, and 150 °C, and their physicochemical, foaming, emulsifying, and gelling properties were assessed. OH processing significantly reduced mean particle size, with the surface-area weighted diameter (D(3,2)) decreasing from approximately 76.1 µm in untreated PP to 56.5, 31.1, and 10.6 µm after OH at 100, 130, and 150 °C, respectively. These structural changes resulted in a clear improvement in foaming performance, with foaming capacity increasing by approximately 40% compared to the control, while all foams remained stable for at least 60 min. In contrast, emulsifying activity showed no substantial enhancement. Cold-set gels prepared from OH-treated PP exhibited significantly altered rheological behavior, characterized by lower complex modulus values (G* ≈ 0.8–5.4 kPa at 1 Hz) compared to the untreated PP gel (≈25.2 kPa), indicating the formation of softer yet more homogeneous gel networks. Overall, the results demonstrate that OH is an effective tool to tailor the functional properties of commercial pea protein, particularly by enhancing foaming performance and modulating gel structure, supporting its potential application in the development of novel plant-based food products. Full article

Ohmic heating (OH) emerged as an alternative processing method for food preservation and has more recently been used to modify the functional properties of proteins. This study aimed to evaluate the effects of OH on the interfacial properties of whey proteins (WPC) and its interactions with hydrophobic and hydrophilic compounds. WPC solutions (8% w/w) were subjected to electric field intensities ranging from 0 to 50 V·cm⁻¹ until reaching 80 °C. Structural and physicochemical parameters, including free sulfhydryl content, zeta potential, surface hydrophobicity, intrinsic fluorescence, and solubility, were analyzed. Protein–ligand interactions were also evaluated using β-carotene and caffeic acid as model compounds. The results indicated that moderate electric field intensities (30 V·cm⁻¹) promoted increased surface hydrophobicity and intrinsic fluorescence, suggesting protein unfolding and exposure of hydrophobic regions. Higher electric field intensities (40–50 V·cm⁻¹) led to aggregation, reducing solubility and binding affinity to β-carotene. Conversely, OH processing increased the interaction of WPC with caffeic acid due to enhanced exposure of hydrophilic binding sites. These findings provide insights into the modulation of whey protein interfacial properties through OH and highlight its potential for tailoring protein functionality in food formulations. Full article

To enhance the RF power properties of CMOS-compatible gold-free GaN devices, this work introduces a kind of GaN-on-Si HEMT with a low parasitic regrown ohmic contact technology. Attributed to the highly doped n⁺ InGaN regrown layer and smooth morphology of gold-free ohmic stacks, the lowest ohmic contact resistance (R_c) was presented as 0.072 Ω·mm. More importantly, low RF loss and low total dislocation density (TDD) of the Si-based GaN epitaxy were achieved by a designed two-step-graded (TSG) transition structure for the use of scaling-down devices in high-frequency applications. Finally, the fabricated GaN HEMTs on the Si substrate presented a maximum drain current (I_drain) of 1206 mA/mm, a peak transconductance (G_m) of 391 mS/mm, and a breakdown voltage (V_BR) of 169 V. The outstanding material and DC performances strongly encourage a maximum output power density (P_out) of 10.2 W/mm at 8 GHz and drain voltage (V_drain) of 50 V in active pulse mode, which, to our best knowledge, updates the highest power level for gold-free GaN devices on Si substrates. The power results reflect the reliable potential of low parasitic regrown ohmic contact technology for future large-scale CMOS-integrated circuits in RF applications. Full article

Gallium nitride (GaN) offers exceptional material properties, making it indispensable in communications, defense, and power electronics. With high electron mobility and robust thermal conductivity, GaN-based devices excel in high-frequency, high-power applications. They are vital in wireless communication systems, radar, electronic warfare, and power electronics systems, offering superior performance, efficiency, and reliability. Further research is crucial for optimizing GaN-based devices performance and expanding their applications, driving innovation across industries. The application of ion implantation technology in GaN-based devices is a key process that can be used to improve device performance and characteristics, which enables process aspects such as electrical isolation, ion implantation for ohmic contacts, threshold voltage regulation, and terminal design. In this paper, we will focus on reviewing the principles and issues of the ion implantation process in GaN-based device preparation. This work aims to serve as a guide for ion implantation in future GaN-based devices. Full article

The electrical properties of contacts to p-type nitride semiconductor devices, based on gallium nitride, were simulated by ab initio and drift-diffusion calculations. The electrical properties of the contact are shown to be dominated by the electron-transfer process from the metal to GaN, which is related to the Fermi-level difference, as determined by both ab initio and model calculations. The results indicate a high potential barrier for holes, leading to the non-Ohmic character of the contact. The electrical nature of the Ni–Au contact formed by annealing in an oxygen atmosphere was elucidated. The influence of doping on the potential profile of p-type GaN was calculated using the drift-diffusion model. The energy-barrier height and width for hole transport were determined. Based on these results, a new type of contact is proposed. The contact is created by employing multiple-layer implantation of deep acceptors. The implementation of such a design promises to attain superior characteristics (resistance) compared with other contacts used in bipolar nitride semiconductor devices. The development of such contacts will remove one of the main obstacles in the development of highly efficient nitride optoelectronic devices, both LEDs and LDs: energy loss and excessive heat production close to the multiple-quantum-well system. Full article

Constructing heterojunctions can combine the superior performance of different two-dimensional (2D) materials and eliminate the drawbacks of a single material, and modulating heterojunctions can enhance the capability and extend the application field. Here, we investigate the physical properties of the heterojunctions formed by the contact of different atom planes of Janus MoSSe (JMoSSe) and graphene (Gr), and regulate the Schottky barrier of the Gr/JMoSSe heterojunction by the number of layers and the electric field. Due to the difference in atomic electronegativity and surface work function (WF), the Gr/JSMoSe heterojunction formed by the contact of S atoms with Gr exhibits an n-type Schottky barrier, whereas the Gr/JSeMoS heterojunction formed by the contact of the Se atoms with Gr reveals a p-type Schottky barrier. Increasing the number of layers of JMoSSe allows the Gr/JMoSSe heterojunction to achieve the transition from Schottky contact to Ohmic contact. Moreover, under the control of an external electric field, the Gr/JMoSSe heterojunction can realize the transition among n-type Schottky barrier, p-type Schottky barrier, and Ohmic contact. The physical mechanism of the layer number and electric field modulation effect is analyzed in detail by the change in the interface electron charge transfer. Our results will contribute to the design and application of nanoelectronics and optoelectronic devices based on Gr/JMoSSe heterojunctions in the future. Full article

Memristors with resistive switching capabilities are vital for information storage and brain-inspired computing, making them a key focus in current research. This study demonstrates non-volatile analog resistive switching behavior in Al/TiO_x/TiN/Si(n⁺⁺)/Al memristive devices. Analog resistive switching offers gradual, controllable conductance changes, which are essential for mimicking brain-like synaptic behavior, unlike digital/abrupt switching. The amorphous titanium oxide (TiO_x) active layer was deposited using the pulsed-DC reactive magnetron sputtering technique. The impact of increasing the oxide thickness on the electrical performance of the memristors was investigated. Electrical characterizations revealed stable, forming-free analog resistive switching, achieving endurance beyond 300 DC cycles. The charge conduction mechanisms underlying the current–voltage (I–V) characteristics are analyzed in detail, revealing the presence of ohmic behavior, Schottky emission, and space-charge-limited conduction (SCLC). Experimental results indicate that increasing the TiO_x film thickness from 31 to 44 nm leads to a notable change in the current conduction mechanism. The results confirm that the memristors have good stability (>1500 s) and are capable of exhibiting excellent long-term potentiation (LTP) and long-term depression (LTD) properties. The analog switching driven by oxygen vacancy-induced barrier modulation in the TiO_x/TiN interface is explained in detail, supported by a proposed model. The remarkable switching characteristics exhibited by the TiO_x-based memristive devices make them highly suitable for artificial synapse applications in neuromorphic computing systems. Full article

Aluminum nitride (AlN) thin films were deposited on SiO₂ substrates by RF-magnetron sputtering at varying powers (110–140 W) and subsequently subjected to thermal annealing at 450 °C under nitrogen atmosphere. A comprehensive multi-technique investigation—including X-ray reflectometry (XRR), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), optical profilometry, spectroscopic ellipsometry (SE), and electrical measurements—was performed to explore the physical structure, morphology, and optical and electrical properties of the films. The analysis of the film structure by XRR revealed that increasing sputtering power resulted in thicker, denser AlN layers, while thermal treatment promoted densification by reducing density gradients but also induced surface roughening and the formation of island-like morphologies. Optical studies confirmed excellent transparency (>80% transmittance in the near-infrared region) and demonstrated the tunability of the refractive index with sputtering power, critical for optoelectronic applications. The electrical characterization of Au/AlN/Al sandwich structures revealed a transition from Ohmic to trap-controlled space charge limited current (SCLC) behavior under forward bias—a transport mechanism frequently present in a material with very low mobility, such as AlN—while Schottky conduction dominated under reverse bias. The systematic correlation between deposition parameters, thermal treatment, and the resulting physical properties offers valuable pathways to engineer AlN thin films for next-generation optoelectronic and high-frequency device applications. Full article

Rich in bioactive compounds, pigmented rice offers superior antioxidant capacity compared to non-pigmented rice. Processing methods like milling, parboiling, thermal treatments (e.g., extrusion cooking), and biobased approaches (e.g., germination and fermentation) impact the technological and nutritional properties of pigmented rice. All products with added pigmented rice showed improved total phenolic content and antioxidant capacities. Extrusion cooking improved technological properties of dough, bread, and bakery products by modifying the pasting properties of rice. Germination and fermentation enhanced bakery products’ nutritional value by increasing gamma-aminobutyric acid (GABA) levels. Pigmented rice flour can enhance the volume, crumb firmness, and elasticity of gluten-free (GF) bread, especially with ohmic heating. It improved sensory qualities and consumer acceptance of various baked products and extruded snacks. While pigmented rice-based pasta and noodles had compromised cooking qualities, germination improved noodle cooking qualities. Pre-processing techniques like parboiling and micronisation show potential for improving pigmented rice’s technological properties and warrant further study. In conclusion, pigmented rice can enhance the technological and nutritional qualities of bread, bakery products, and snacks. Future researches should focus on agronomic advancement, optimization of pre-processing and processing techniques, exploring varietal differences among pigmented rice cultivars, and promotion of consumer awareness and market potentials. Full article

The proton exchange membrane electrolyzer (PEMWE) has been regarded as a promising technology for converting surplus intermittent renewable energy into green hydrogen through electrochemical water splitting. However, the multiphase mass and charge transport processes with countercurrent flow within the PEMWE create complex structure–property relationships that are difficult to optimize. The interdependent effects of multiple structural parameters on the coupled heat transfer, mass transfer, and charge transfer processes further obscure performance optimization mechanisms. To decouple these phenomena and elucidate the underlying mechanisms, a multiphase one-dimensional mathematical model was developed and experimentally validated. Based on the model, the mass transfer, charge conduction, and heat transfer processes inside the PEMWE have been systematically investigated, with a particular focus on the performance-related parameters of the porous transport layer (PTL). The results reveal that PTL thickness and porosity exhibit opposite effects on activation and ohmic overpotential at an elevated current density. Furthermore, a sharp performance decline occurs when PTL gas permeability falls below the critical threshold. These findings provide quantitative guidelines for multiphysics-informed component optimization in high-performance PEMWEs. Full article

In this work, the transport properties of charge carriers in $\beta$-Ga${}_2$O${}_3$ were investigated, along with intrinsic physical mechanisms such as lattice vibrations, impurity scattering, and interfacial effects. The high-field behavior of carrier mobility was characterized using vacuum deposition techniques for the fabrication of electrodes with ohmic contacts, and the Hall effect measurement system was employed to test the temperature-dependent mobility of Sn-doped n-type (100) and (001) $\beta$-Ga${}_2$O${}_3$ samples at a cryogenic temperature. A predictive model for $\beta$-Ga${}_2$O${}_3$ mobility was developed by examining the effects of the temperature on the scattering mechanisms based on a theoretical transport model. The experimental results for $\beta$-Ga${}_2$O${}_3$ mobility, which varied with the temperature and doping concentration, showed good agreement with the theoretical model within the temperature range of 15–300 K. The maximum discrepancy between the predictive model and the experimental data was less than 5%. This study provides valuable theoretical insights for the design and simulation of $\beta$-Ga${}_2$O${}_3$ devices. Full article

This study employed ohmic heating to investigate its impact on the physicochemical properties, structural organization, and functional characteristics of okara. Ohmic heating was applied with different field strengths and holding times. After moderate ohmic treatment, the water-holding capacity, oil-holding capacity, and swelling capacity of okara increased by 51.11%, 88.89%, and 43.64%, respectively. The microstructure and secondary structure were improved. The total sugar and soluble dietary fiber content were enhanced. The levels of active substances such as total flavonoids and total phenols significantly increased, leading to improved antioxidant capacity. The properties of okara were influenced by the field strength and holding time. This study provides new insights for the processing and development of okara, particularly in the application of functional foods. Full article

Textile structures with ohmic (Joule) heating capability are frequently used for personal thermal management by tuning fluctuations in human body temperature that arise due to climatic changes or for medical applications as electrotherapy. They are constructed from electrically conductive textile structures prepared in different ways, e.g., from metallic yarns, conductive polymers, conductive coatings, etc. In comparison with other types of flexible ohmic heaters, these structures should be corrosion resistant, air permeable, and comfortable. They should not loose ohmic heating efficiency due to frequent intensive washing and maintenance. In this study, the basic electrical properties of a conductive fabric composed of a polyester/cotton fiber mixture and a small amount of fine stainless-steel staple fibers (SS) were evaluated and predicted. Even though the basic conductive component of SS fibers is iron and its electrical characteristics obey Ohm’s law, the electrical behavior of the prepared fabric was highly nonlinear, resembling a more complex response than that of a classical conductor. The non-linear behavior was probably due to non-ideal, poorly defined random interfaces between individual short SS fibers. A significant time–dynamics relationship was also shown. Using the Stefan–Boltzmann law describing radiation power, we demonstrated that it is possible to predict surface temperature due to the ohmic heating of a fabric related to the input electrical power. Significant local temperature variations in the heated hybrid fabric in both main directions (warp and weft) were identified. Full article

Highly (0002)-oriented Al_1−xSc_xN thin films with different Sc doping concentrations (x = 0, 0.2, 0.25, 0.3, and 0.43) were prepared via a magnetron sputtering system. The effects of Sc doping on the crystal structure and electrical property of the as-prepared thin films were investigated experimentally. The results of synchrotron radiation grazing-incidence wide-angle X-ray scattering (GIWAXS) and X-ray diffraction (XRD) demonstrated that the Sc³⁺ substitution for Al³⁺ induced asymmetric lattice distortion: the a-axis exhibited monotonic expansion (reaching 3.46 Å at x = 0.43) due to the larger atomic radius of Sc (~0.87 Å), while the c-axis attained a maximum value of 5.14 Å at x = 0.2 and subsequently contracted as the bond angle reduction became dominant. The dielectric constant increased to 34.67 (225% enhancement) at x = 0.43, attributed to the enhanced polarization of Sc-N bonds and interfacial charge accumulation effects. Simultaneously, the dielectric loss increased from 0.15% (x = 0) to 6.7% (x = 0.43). Leakage current studies revealed that high Sc doping (x = 0.43) elevated the leakage current density to 10⁻⁶ A/cm² under an electric field of 0.2 MV/cm, accompanied by a transition from Ohmic conduction to space-charge-limited current (SCLC) at a low electric field strength (<0.072 MV/cm). Full article

The aim of this review is to provide a comprehensive overview of protein extraction from legume sources, with a focus on both conventional and emerging techniques. Particular attention is given to the impact of innovative methods on protein functionality, a key factor for food applications. Due to their nutritional profile and techno-functional properties, legumes are increasingly regarded as promising alternatives to animal-based protein sources in the food industry. Traditional extraction methods, such as alkaline and acidic extraction, are discussed and compared with novel approaches including enzymatic extraction, ultrasound-assisted extraction (UAE), microwave-assisted extraction (MAE), ohmic heating (OH), subcritical water extraction (SWE), deep eutectic solvents (DES), and dry fractionation. The potential of these emerging technologies to improve protein yield and functionality is critically assessed, alongside key challenges such as scalability, cost-effectiveness, and potential allergenicity. This review also identifies current research gaps and highlights opportunities for innovation in sustainable protein extraction. Therefore, this review contributes to the development of more efficient, functional, and sustainable protein ingredients production, highlighting the role of innovative extraction technologies in shaping the future of plant-based foods. Full article