Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices

Lu, Hao; Hao, Xiaorun; Zhang, Yichi; Yang, Ling; Hou, Bin; Zhang, Meng; Wu, Mei; Ma, Xiaohua; Hao, Yue

doi:10.3390/mi16090999

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Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices

by

Hao Lu

,

Xiaorun Hao

,

Yichi Zhang

,

Ling Yang

,

Bin Hou

^*,

Meng Zhang

,

Mei Wu

,

Xiaohua Ma

^* and

Yue Hao

School of Microelectronics, Xidian University, Xi’an 710071, China

^*

Authors to whom correspondence should be addressed.

Micromachines 2025, 16(9), 999; https://doi.org/10.3390/mi16090999

Submission received: 18 July 2025 / Revised: 22 August 2025 / Accepted: 27 August 2025 / Published: 29 August 2025

(This article belongs to the Special Issue Micro/Nano Manufacturing of Electronic Devices)

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Abstract

Gallium nitride (GaN) offers exceptional material properties, making it indispensable in communications, defense, and power electronics. With high electron mobility and robust thermal conductivity, GaN-based devices excel in high-frequency, high-power applications. They are vital in wireless communication systems, radar, electronic warfare, and power electronics systems, offering superior performance, efficiency, and reliability. Further research is crucial for optimizing GaN-based devices performance and expanding their applications, driving innovation across industries. The application of ion implantation technology in GaN-based devices is a key process that can be used to improve device performance and characteristics, which enables process aspects such as electrical isolation, ion implantation for ohmic contacts, threshold voltage regulation, and terminal design. In this paper, we will focus on reviewing the principles and issues of the ion implantation process in GaN-based device preparation. This work aims to serve as a guide for ion implantation in future GaN-based devices.

Keywords: gallium nitride; RF device; fabrication process; ion implantation; HEMT

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MDPI and ACS Style

Lu, H.; Hao, X.; Zhang, Y.; Yang, L.; Hou, B.; Zhang, M.; Wu, M.; Ma, X.; Hao, Y. Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. Micromachines 2025, 16, 999. https://doi.org/10.3390/mi16090999

AMA Style

Lu H, Hao X, Zhang Y, Yang L, Hou B, Zhang M, Wu M, Ma X, Hao Y. Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. Micromachines. 2025; 16(9):999. https://doi.org/10.3390/mi16090999

Chicago/Turabian Style

Lu, Hao, Xiaorun Hao, Yichi Zhang, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiaohua Ma, and Yue Hao. 2025. "Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices" Micromachines 16, no. 9: 999. https://doi.org/10.3390/mi16090999

APA Style

Lu, H., Hao, X., Zhang, Y., Yang, L., Hou, B., Zhang, M., Wu, M., Ma, X., & Hao, Y. (2025). Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. Micromachines, 16(9), 999. https://doi.org/10.3390/mi16090999

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Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices

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