Search Results (53)

Organic field-effect transistors (OFETs) require reliable micro- and nanoscale patterning of semiconducting layers, yet conjugated polymers have long been considered incompatible with photolithography due to dissolution and chemical damage from photoresist solvents. Here, we present a photolithography-compatible strategy based on doping-induced solubility conversion (DISC), demonstrated using poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT). AuCl₃ doping reversibly modulates the benzoid/quinoid resonance balance, lamellar stacking, and π–π interactions, suppressing solubility during lithographic exposure, while dedoping restores the intrinsic electronic properties. Using this approach, micropatterns with linewidths as small as 2 µm were fabricated in diverse geometries—including line arrays, concentric rings, dot arrays, and curved channels—with high fidelity; quantitative analysis of dot arrays yielded mean absolute errors of 48–66 nm and coefficients of variation of 2.0–3.9%, confirming resolution and reproducibility across large areas. Importantly, OFETs based on patterned PBTTT exhibited charge-carrier mobility, threshold voltage, and on/off ratios comparable to spin-coated devices, despite undergoing multiple photolithography steps, indicating preservation of transport characteristics. Furthermore, the same DISC-assisted lithography was successfully applied to other representative p-type conjugated polymers, including P3HT and PDPP-4T, confirming the universality of the method. This scalable strategy thus combines the precision of established lithography with the functional advantages of organic semiconductors, providing a robust platform for high-density organic electronic integration in flexible circuits, biointerfaces, and active-matrix systems. Full article

Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities in heterogeneous substrates. Herein, we systematically investigate the electrical performance and reliability of GaN-on-GaN HEMTs in comparison to conventional GaN-on-SiC HEMTs via DC characterization, reverse gate step stress, off-state drain step stress, and on-state electrical stress tests. Notably, the homogeneous epitaxial structure of GaN-on-GaN devices reduces dislocation density by 83.3% and minimizes initial tensile stress, which is obtained through HRXRD and Raman spectroscopy. The GaN-on-GaN HEMTs exhibit a record BFOM of 950 MW/cm², enabled by a low specific on-resistance (R_ON-SP) of 0.6 mΩ·cm² and a high breakdown voltage (BV) of 755 V. They withstand gate voltages up to −200 V and drain voltages beyond 200 V without significant degradation, whereas GaN-on-SiC HEMTs fail at −95 V (reverse gate stress) and 150 V (off-state drain stress). The reduced dislocation density suppresses leakage channels and defect-induced degradation, as confirmed by post-stress Schottky/transfer characteristics and Frenkel–Poole emission analysis. These findings establish GaN-on-GaN technology as a transformative solution for power electronics, offering a unique combination of high efficiency and long-term stability for demanding high-voltage applications. Full article

Organic electrochemical transistors (OECTs) are compelling artificial synapses because mixed ionic–electronic coupling and transport enables low-voltage, analog weight updates that mirror biological plasticity. Here, we engineered solid-state, polymer electrolyte-gated vertical OECTs (vOECTs) and elucidate how electrolyte molecular weight influences synaptic dynamics. Using Pg2T-T as the redox-active channel and pDADMAC polymer electrolytes spanning low- (~100 k), medium- (~300 k), and high- (~500 k) molecular weights, cyclic voltammetry reveals reversible Pg2T-T redox, while peak separation and current density systematically track ion transport kinetics. Increasing electrolyte molecular weight enlarges the transfer curve hysteresis (memory window ΔV_mem from ~0.15 V to ~0.50 V) but suppresses on-current, consistent with slower, more confining ion motion and stabilized partially doped states. Devices exhibit rich short- and long-term plasticity: paired-pulse facilitation (A₂/A₁ ≈ 1.75 at Δt = 50 ms), frequency-dependent EPSCs (low-pass accumulation), cumulative potentiation, and reversible LTP/LTD. A device-aware CrossSim framework built from continuous write/erase cycles (probabilistic LUT) supports Fashion-MNIST inference with high accuracy and bounded update errors (mean −0.02; asymmetry 0.198), validating that measured nonidealities remain algorithm-compatible. These results provide a materials-level handle on polymer–ion coupling to deterministically tailor temporal learning in compact, robust neuromorphic hardware. Full article

Germanium (Ge) has long been regarded as a promising channel material, owing to its superior carrier mobility and highly tunable electronic band structure. The new generation of low-power electronics is approaching the formation of fully depleted (FD) transistors on Si-on-insulator (SOl) and Ge-on-insulator (GOl) substrates. In this work, we present a full process of a novel FDGOI transistor formed on a strained GOI with low defect density. This scalable and industry-compatible approach enables the formation of uniform 50 nm thick Ge layers by using spinning wet etch with ultrasmooth surfaces (RMS roughness = 0.262 nm) and a low etch-pit density of ~10⁵ cm⁻². Electrical measurements reveal excellent carrier transport properties, with back-gate (BG) transistors achieving mobilities of 550–600 cm²/V·s, while front-gate (FG) devices exhibit sharp switching behavior and steep subthreshold slopes, yielding I_ON/I_OFF ratios up to 10⁵. Temperature-dependent measurements further demonstrate a pronounced enhancement of device performance: the I_ON/I_OFF ratio increases to 106, the subthreshold swing (SS) decreases from 179 mV/dec at room temperature to 137 mV/dec at 120 K, and the threshold-voltage shift with temperature is as low as 1.87 mV/K across the range of 30–300 K. Such behavior highlights the potential of band-gap engineering for precise threshold-voltage control. Taken together, these results establish GOI as a CMOS-compatible material platform and provide a solid technological basis for the development of next-generation low-power transistors beyond conventional CMOS scaling. Full article

In this study, we propose a bidirectional chemical sensor platform based on a reconfigurable ion-sensitive field-effect transistor (R-ISFET) architecture. The device incorporates Ni-silicide Schottky barrier source/drain (S/D) contacts, enabling ambipolar conduction and bidirectional turn-on behavior for both p-type and n-type configurations. Channel polarity is dynamically controlled via the program gate (PG), while the control gate (CG) suppresses leakage current, enhancing operational stability and energy efficiency. A dual-control-gate (DCG) structure enhances capacitive coupling, enabling sensitivity beyond the Nernst limit without external amplification. The extended-gate (EG) architecture physically separates the transistor and sensing regions, improving durability and long-term reliability. Electrical characteristics were evaluated through transfer and output curves, and carrier transport mechanisms were analyzed using band diagrams. Sensor performance—including sensitivity, hysteresis, and drift—was assessed under various pH conditions and external noise up to 5 V_pp (i.e., peak-to-peak voltage). The n-type configuration exhibited high mobility and fast response, while the p-type configuration demonstrated excellent noise immunity and low drift. Both modes showed consistent sensitivity trends, confirming the feasibility of complementary sensing. These results indicate that the proposed R-ISFET sensor enables selective mode switching for high sensitivity and robust operation, offering strong potential for next-generation biosensing and chemical detection. Full article

In this study, we propose a method for systematic nanowire length control through the precise control of the polyvinylpyrrolidone (PVP) concentration during the synthesis of tellurium nanowires. Furthermore, we report the changes in the electrical properties of thin-film transistor (TFT) devices with different lengths of synthesized tellurium nanowires used as channels. Through the use of scanning electron microscopy (SEM) and atomic force microscopy (AFM), it was determined that the length of the wires increased in relation to the amount of PVP incorporated, while the diameter remained consistent. The synthesized long wires formed a well-connected percolation network with a junction density of 4.6 junctions/µm², which enabled the fabrication of devices with excellent electrical properties, the highest on/off ratio of 10³, and charge mobility of 1.1 cm²/V·s. In contrast, wires with comparatively reduced PVP content demonstrated a junction density of 2.1 junctions/µm², exhibiting a lower on/off ratio and reduced charge mobility. These results provide guidance on how the amount of PVP added during wire growth affects the length of the synthesized wires and how it affects the connectivity between the wires when they form a network, which may help optimize the performance of high-performance nanoelectronic devices. Full article

WO₃-based electrochemical transistors (ECTs) are recognized as candidates for three-terminal memristors due to their high on–off ratio, long retention time, and rapid switching speed. However, their patterned fabrication often relies on complex vacuum systems or extreme processing conditions, hindering cost-effective scalability. Here, we developed a novel wet etching technique integrated with sol–gel-derived WO₃ channels, enabling ambient-air fabrication of Nafion-WO₃ ECTs. The wet-etched devices achieve an on–off ratio of ~10⁵, surpassing unetched and dry-etched counterparts by orders of magnitude. Furthermore, they exhibit exceptional paired-pulse facilitation and long-term stability, maintaining 12 distinct conductance states for 10³ s, and an on–off ratio of ~10² over 25 read–write cycles. XPS result shows higher W⁵⁺ content and M-O-H bond proportion for wet-etched devices, revealing an optimized interface, with enhanced H⁺ injection efficiency. The simulated artificial neural network using this wet-etched ECT shows ~97% recognition accuracy for handwritten numerals. This approach offers a novel patterning strategy for developing cost-effective, high-performance neuromorphic devices. Full article

Accurate monitoring of sodium and potassium ions in biological fluids is crucial for diseases related to electrolyte imbalance. Low-dimensional materials such as carbon nanotubes can be used to construct biochemical sensors based on high-performance field effect transistor (FET), but they face the problems of poor device consistency and difficulty in stable and reliable operation. In this work, we mass-produced carbon nanotube (CNT) floating-gate field-effect transistor devices with high uniformity and consistency through micro-/nanofabrication technology to improve the accuracy and reliability of detection without the need for statistical analysis based on machine learning. By introducing waterproof hafnium oxide gate dielectrics on the CNT FET channel, we not only effectively protect the channel area but also significantly improve the stability of the sensor. We have prepared array sensing technology based on CNT FET that can detect potassium, sodium, calcium, and hydrogen ions in artificial cerebrospinal fluid. The detection concentration range is 10 μM–100 mM and pH 3–pH 9, with a sensitivity close to the Nernst limit, and exhibits selective and long-term stable responses. This could help achieve early diagnosis and real-time monitoring of central nervous system diseases, highlighting the potential of this ion-sensing platform for highly sensitive and stable detection of various neurobiological markers. Full article

We propose a new type of flexible transistor based on carbon-nanotube (CNT) composite thread (CNTCT), i.e., a thread transistor, with ionic gel. In our previous study, we demonstrated that transistor operation was possible by combining metallic and semiconducting CNTCTs as gate and channel with an insulating material. However, its performance was not sufficient. Therefore, we here aim to improve it. For this, we tried to apply ionic gel as a dielectric layer to it. With this, the transistor was expected to be an electric-double-layer transistor. The transistor performance was improved, and the on/off ratio of the transistor increased by more than 4. This is a large value compared to our previous work. In addition, we not only evaluated the performance of the transistors, but also investigated whether they could be used as logic circuits. It was confirmed that the logic circuit composed of the thread transistor also operated correctly and stably for a long period of time. It was also confirmed that the output changed in response to weak external forces. These results indicate that it is a flexible transistor that can be used in a wide range of applications such as logic circuits and sensors. Full article

Benzene, as a typical toxic gas and carcinogen, is an important detection object in the field of environmental monitoring. However, it remains challenging for the conventional resistance-type gas sensor to effectively detect low-concentration (ppb-level) benzene gas molecules, owing to their insufficient reaction activation energy, especially when operating at room temperature. Herein, a field-effect transistor (FET)-type gas sensor using carbon nanotubes as a channel material is proposed for the efficient detection of trace benzene, where carbon nanotubes (CNTs) with high semiconductor purity act as the main channel material, and ZnO/WS₂ nanocomposites serve as the gate sensitive material. On the basis of the remarkable amplification effect in CNTs-based FET, the proposed gas sensor manifests desirable sensitive ability with the detection limit as low as 500 ppb for benzene even working at room temperature, and the sensor also exhibits fast response speed (90 s), high consistency with a response deviation of less than 5%, and long-term stability of up to 30 days. Furthermore, utilizing Tenax TA as the screening unit, the as-proposed gas sensor can achieve the feasible selective detection of benzene. These experimental results demonstrate that the strategy proposed here can provide significant guidance for the development of high-performance gas sensors to detect trace benzene gas at room temperature. Full article

This study investigated the potential of indium tungsten oxide (IWO) channel-based inorganic electrolyte transistors as synaptic devices. We comparatively analyzed the electrical characteristics of indium gallium zinc oxide (IGZO) and IWO channels using phosphosilicate glass (PSG)-based electrolyte transistors, focusing on the effects of electric-double-layer (EDL) and electrochemical doping. The results showed the superior current retention characteristics of the IWO channel compared to the IGZO channel. To validate these findings, we compared the DC bias characteristics of SiO₂-based field-effect transistors (FETs) with IGZO and IWO channels. Furthermore, by examining the transfer curve characteristics under various gate voltage (V_G) sweep ranges for PSG transistors based on IGZO and IWO channels, we confirmed the reliability of the proposed mechanisms. Our results demonstrated the superior short-term plasticity of the IWO channel at V_G = 1 V due to EDL operation, as confirmed by excitatory post-synaptic current measurements under pre-synaptic conditions. Additionally, we observed superior long-term plasticity at V_G ≥ 2 V due to proton doping. Finally, the IWO channel-based FETs achieved a 92% recognition rate in pattern recognition simulations at V_G = 4 V. IWO channel-based inorganic electrolyte transistors, therefore, have remarkable applicability in neuromorphic devices. Full article

Brain-inspired flexible neuromorphic devices are of great significance for next-generation high-efficiency wearable sensing and computing systems. In this paper, we propose a flexible organic electrochemical transistor using poly[(bithiophene)-alternate-(2,5-di(2-octyldodecyl)- 3,6-di(thienyl)-pyrrolyl pyrrolidone)] (DPPT-TT) as the organic semiconductor and poly(methyl methacrylate) (PMMA)/LiClO₄ solid-state electrolyte as the gate dielectric layer. Under gate voltage modulation, an electric double layer (EDL) forms between the dielectric layer and the channel, allowing the device to operate at low voltages. Furthermore, by leveraging the double layer effect and electrochemical doping within the device, we successfully mimic various synaptic behaviors, including excitatory post-synaptic currents (EPSC), paired-pulse facilitation (PPF), high-pass filtering characteristics, transitions from short-term plasticity (STP) to long-term plasticity (LTP), and demonstrate its image recognition and storage capabilities in a 3 × 3 array. Importantly, the device’s electrical performance remains stable even after bending, achieving ultra-low-power consumption of 2.08 fJ per synaptic event at −0.001 V. This research may contribute to the development of ultra-low-power neuromorphic computing, biomimetic robotics, and artificial intelligence. Full article

Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as charge carrier behavior, is essential and can also unveil new and unforeseen applications. This underscores the necessity for novel characterization tools to study group-III nitride materials and devices. The optical Hall effect (OHE) emerges as a contactless method for exploring the transport and electronic properties of semiconductor materials, simultaneously offering insights into their dielectric function. This non-destructive technique employs spectroscopic ellipsometry at long wavelengths in the presence of a magnetic field and provides quantitative information on the charge carrier density, sign, mobility, and effective mass of individual layers in multilayer structures and bulk materials. In this paper, we explore the use of terahertz (THz) OHE to study the charge carrier properties in group-III nitride heterostructures and bulk material. Examples include graded AlGaN channel high-electron-mobility transistor (HEMT) structures for high-linearity devices, highlighting the different grading profiles and their impact on the two-dimensional electron gas (2DEG) properties. Next, we demonstrate the sensitivity of the THz OHE to distinguish the 2DEG anisotropic mobility parameters in N-polar GaN/AlGaN HEMTs and show that this anisotropy is induced by the step-like surface morphology. Finally, we present the temperature-dependent results on the charge carrier properties of 2DEG and bulk electrons in GaN with a focus on the effective mass parameter and review the effective mass parameters reported in the literature. These studies showcase the capabilities of the THz OHE for advancing the understanding and development of group-III materials and devices. Full article

This article presents a new broadband three-way series Doherty power amplifier (DPA) topology, which enables a broadband output power back-off (OBO) efficiency enhancement of up to 10 dB or higher. The proposed DPA topology achieves Doherty load modulation and three-way power combining through a transformer, which requires only a low coupling factor, thus facilitating its implementation in double-sided PCBs or monolithic microwave integrated circuit (MMIC) processes. The design equations for the proposed DPA topology are proposed and analyzed in detail. A proof-of-concept PA at the 2.1–2.8 GHz band using commercial GaN transistors was designed and fabricated to validate the proposed concept. Within the operating frequency band, it achieves a saturated output power ($P_{\mathrm{sat}}$) of 44.5–46.5 dBm with a peak drain efficiency (DE) of 60–72%, and 43–52% DE at 10 dB OBO. Moreover, under a 20 MHz long-term evolution (LTE)-modulated signal, the PA demonstrates a 36.8–37.5 dBm average output power ($P_{avg}$) and 47–53% average drain efficiency (${DE}_{avg}$). Notably, the adjacent channel leakage ratio (ACLR) is as low as −35–−28.2 dBc without any digital predistortion (DPD). Full article

Oxide electrolyte-gated transistors have shown the ability to emulate various synaptic functions, but they still require a high gate voltage to form long-term plasticity. Here, we studied electrolyte-gated transistors based on InO_x with tungsten doping (W-InO_x). When the tungsten-to-indium ratio increased from 0% to 7.6%, the memory window of the transfer curve increased from 0.2 V to 2 V over a small sweep range of −2 V to 2.5 V. Under 50 pulses with a duty cycle of 2%, the conductance of the transistor increased from 40-fold to 30,000-fold. Furthermore, the W-InO_x transistor exhibited improved paired pulse facilitation and successfully passed the Pavlovian test after training. The formation of WO₃ within InO_x and its ion intercalation into the channel may account for the enhanced synaptic plasticity. Full article