Search Results (242)

High-entropy alloys (HEAs) present a vast compositional design space, characterized by four core effects—high configurational entropy, sluggish diffusion, severe lattice distortion, and the cocktail effect—which collectively underpin their exceptional potential for both structural and hydrogen storage applications. This mini-review synthesizes recent advances in the compositional design of HEAs with emphasis on structural materials and hydrogen storage. Firstly, it provides an overview of the definition of HEAs and the roles of principal alloying elements, then synthesizes solid solution formation rules based on representative descriptors—atomic size mismatch, electronegativity difference, valence electron concentration, mixing enthalpy, and mixing entropy—together with their applicability limits and common failure scenarios. A brief introduction is provided to the preparation methods of arc melting and powder metallurgy, which have a strong interaction with the composition. The design–structure–property links are then consolidated for structural materials (mechanical properties) and for hydrogen storage materials (hydrogen storage performance). Furthermore, the rules for the combined design of control systems for HEAs and the associated challenges were further discussed, and the future development prospects of HEAs in structural materials and hydrogen storage were also envisioned. Full article

Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities in heterogeneous substrates. Herein, we systematically investigate the electrical performance and reliability of GaN-on-GaN HEMTs in comparison to conventional GaN-on-SiC HEMTs via DC characterization, reverse gate step stress, off-state drain step stress, and on-state electrical stress tests. Notably, the homogeneous epitaxial structure of GaN-on-GaN devices reduces dislocation density by 83.3% and minimizes initial tensile stress, which is obtained through HRXRD and Raman spectroscopy. The GaN-on-GaN HEMTs exhibit a record BFOM of 950 MW/cm², enabled by a low specific on-resistance (R_ON-SP) of 0.6 mΩ·cm² and a high breakdown voltage (BV) of 755 V. They withstand gate voltages up to −200 V and drain voltages beyond 200 V without significant degradation, whereas GaN-on-SiC HEMTs fail at −95 V (reverse gate stress) and 150 V (off-state drain stress). The reduced dislocation density suppresses leakage channels and defect-induced degradation, as confirmed by post-stress Schottky/transfer characteristics and Frenkel–Poole emission analysis. These findings establish GaN-on-GaN technology as a transformative solution for power electronics, offering a unique combination of high efficiency and long-term stability for demanding high-voltage applications. Full article

Electromagnetic wave interference has escalated into a pervasive global issue, driving intensified research efforts across both civilian and military domains. However, the development of advanced electromagnetic wave (EMW) absorbers with finely tunable dielectric and magnetic loss properties has emerged as a pivotal strategy for mitigating electromagnetic pollution. Herein, we propose a cation engineering strategy to tailor the absorption properties of ZIF-67-derived layered double hydroxide (LDH) composites through systematic substitution of Co²⁺ with Fe, Mn, Zn, or Ni and stoichiometric control (Co/X = 1:4, 1:1). Mn/Zn doping enhances dipole polarization via lattice distortion, while structural analysis confirms that higher Co/X ratios preserve core–shell architectures, optimizing impedance matching. In contrast, Fe incorporation leads to excessive conductivity and impedance mismatch. The optimized CoNi1-4 composite exhibits superior broadband absorption (EAB = 4.52 GHz at 1.8 mm thickness, RL_min = −24.5 dB), attributed to synergistic interface polarization and magnetic coupling. This study delivers a highly tailorable materials platform that enables a deeper fundamental understanding of the synergy between dielectric and magnetic loss processes, thereby offering new pathways for optimizing electromagnetic wave absorption. Full article

Epitaxial thick films of yttrium iron garnet (YIG) are ideal for use in microwave devices due to their low losses at high frequencies. This report is on the growth of strain-engineered YIG films by liquid-phase epitaxy (LPE) on yttrium aluminum garnet (YAG) substrates with −3% lattice mismatch with YIG. Since the use of a lattice-matched substrate is preferred for LPE growths, a seed layer of YIG, 370–400 nm in thickness, was deposited by pulsed laser deposition (PLD) on (100), (110), and (111) YAG substrates. The seed layers were stoichiometric with magnetic parameters in agreement with the parameters for bulk single-crystal YIG and with strain-induced perpendicular magnetic anisotropy field H_a = 0.19–0.43 kOe. YIG films, 4 to 8.4 μm in thickness, were grown by LPE at 870 °C on YAG substrates with the seed layers using the PbO+B₂O₃ flux and annealed in air at 1000 °C. The films were Y-rich and Fe-deficient and confirmed to be epitaxial single crystals by X-ray diffraction. The saturation magnetization 4πM_s at room temperature was rather high and ranged from 1.9 kG to 2.3 kG. Ferromagnetic resonance at 5–15 GHz showed the absence of significant magneto-crystalline anisotropy in the LPE films with the line-width ΔH in the range 85–160 Oe, and H_a = 0.27–0.80 kOe which is much higher than for the seed layers. The high magnetization and H_a-values for the LPE films could be partially attributed to the off-stoichiometry. Although the strain due to the film–substrate lattice mismatch contributes to H_a, the mismatch in the thermal expansion coefficients for YIG and YAG is also a likely cause of H_a due to the high growth and annealing temperatures. The LPE-grown YIG films with high strain-induced anisotropy fields have the potential for use in self-biased microwave devices. Full article

Addressing the challenges of energy production and environmental sustainability necessitates the development of advanced materials capable of facilitating both photocatalytic reduction and oxidation processes. Here, we report a Z-scheme Ag₃PO₄/CuBi₂O₄ heterojunction photocatalyst, which was fabricated via the in situ anisotropic growth of Ag₃PO₄ nanoparticles on the ends of CuBi₂O₄ microrods. The prepared heterojunction exhibits a low lattice mismatch (~3%) and features a covalently bonded interface, anchored by oxygen atoms, with the formation of P-O-Cu bonds. This interface synergizes with the built-in electric field to drive an efficient Z-scheme charge transfer mechanism, significantly enhancing the separation and migration of carriers. Furthermore, the interfacial chemical bonds induce electron redistribution that effectively weakens the Ag-O bond, thereby activating surface lattice oxygen. As a result, the photocatalyst shows remarkably improved performance for photocatalytic oxygen evolution synchronized with Cr(VI) reduction by enabling both the conventional adsorbate evolution mechanism and the lattice oxygen mechanism. This work provides critical insights into the design of efficient photocatalysts. Full article

This work is motivated by the need to enhance efficiency and radiation resistance and reduce weight in high-performance photovoltaic devices, with applications spanning both terrestrial and space environments. Metamorphic buffers are key enablers for reducing defect formation in lattice-mismatched structures, which are among the most widespread technologies for high-efficiency photovoltaic energy conversion. Although many systems have been created, absolute certainty about the effective relaxation mechanism remains unattained. In this work, MOVPE-grown step-graded buffers with variable In content were obtained on Ge substrates and investigated to identify the critical thresholds that govern strain relaxation and defect formation. The results show that the buffers are fully strained when the In top-layer content is <6.0%, while a degree of relaxation in the entire structure appears when the In top-layer content is >6.0%. In addition, the relaxation phenomenon is paralleled by the formation of a tilt angle between the layers and the substrate. We also found evidence that the appearance of relaxation is not limited to the upper layer but is presented by the structure as a whole. The effects of Te doping inside the InGaAs layers were also investigated: Te does not influence the structure of the crystal, but it introduces a Burstein–Moss blue shift in the photoluminescence energy of about 20 meV. Eventually, to reduce defect formation with the goal of achieving high-efficiency photovoltaic devices, a thick layer with a lower In content was grown onto the overshoot material (In_0.12Ga_0.88As). The results obtained confirm the high quality of the buffers and unveil the critical points, which are responsible for the most important changes in the buffer architecture and should be considered in future material engineering. The results provide valuable insights for the design of high-performance, sustainable photovoltaic devices and contribute to the advancement of III–V semiconductor integration on Ge substrates. Full article

In this paper, we have proposed a two-party authenticated key establishment (AKE), and authenticated key transport protocols based on lattice-based cryptography, aiming to provide security against quantum attacks for secure communication. This protocol enables two parties, who may share long-term public keys, to securely establish a shared session key, and transportation of the session key from the server while achieving mutual authentication. Our construction leverages the hardness of lattice problems Ring Learning With Errors (Ring-LWE), ensuring robustness against quantum and classical adversaries. Unlike traditional schemes whose security depends upon number-theoretic assumptions being vulnerable to quantum attacks, our protocol ensures security in the post-quantum era. The proposed protocol ensures forward secrecy, and provides security even if the long-term key is compromised. This protocol also provides essential property key freshness and resistance against man-in-the-middle attacks, impersonation attacks, replay attacks, and key mismatch attacks. On the other hand, the proposed key transport protocol provides essential property key freshness, anonymity, and resistance against man-in-the-middle attacks, impersonation attacks, replay attacks, and key mismatch attacks. A two-party key transport protocol is a cryptographic protocol in which one party (typically a trusted key distribution center or sender) securely generates and sends a session key to another party. Unlike key exchange protocols (where both parties contribute to key generation), key transport protocols rely on one party to generate the key and deliver it securely. The protocol possesses a minimum number of exchanged messages and can reduce the number of communication rounds to help minimize the communication overhead. Full article

Developing high-activity and high-durability Pd-based electrocatalysts is an important strategy to promote their commercial application. Herein, a smaller particle size and ultrathin sheet-like PdCu alloy metallene (PdCuene) were successfully prepared by using a one-pot wet chemistry method for FAOR. Experimental measurements indicated that the introduction Cu into Pd lattice induces a significant compressive strain effect through lattice mismatch between Pd and Cu, and the strain effect optimizes the electronic structure of Pd, as well as the high electrochemical surface area, increased exposure of active sites, and appropriate lattice strain have been demonstrated as factors that influence the enhancement of intrinsic activity and the acceleration of kinetics, thereby improving FAOR performance. Moreover, the stronger lattice strain of 0.85% would facilitate surface adsorption and dissociation of formic acid. Specifically, the optimized PdCuene exhibits enhanced mass activity and specific activity with current densities of 2.31 A mg_Pd⁻¹ and 4.09 mA cm⁻², respectively, which transcend the activities of Pd metallene (1.44 A mg_Pd⁻¹ and 2.73 mA cm⁻²) and commercial Pd/C (0.6 A mg_Pd⁻¹ and 1.53 mA cm⁻²). Meanwhile, PdCuene displayed obvious enhanced durability. The work provides an approach to modulate the lattice strain engineering, which represents a highly promising strategy for designing efficient FAOR electrocatalysts. Full article

Background: To overcome the esthetic limitations of dental monolithic zirconia restorations, multichromatic systems were developed to combine improved structural integrity with a natural shade gradient that mimics the optical properties of natural teeth. In response to the clinical demand for time-efficient, i.e., chairside fabrication of zirconia restorations, rapid sintering protocols have become necessary to adjust clinical efficiency along with material performance. This study addresses the challenges of a rapid sintering protocol related to optical performance and phase transformation of the final restoration and the zirconia–cell interaction. Methods: The influence of a rapid sintering protocol on the color stability of the final dental restoration was evaluated by the CIE L*a*b* color space. Phase transformation was assessed through X-ray diffraction analysis. Cellular behavior was evaluated by measuring wettability, the material’s surface energy, and a cell mitochondrial activity assay on human gingival fibroblasts. Results: Optical measurements demonstrated that the total color change in all layers after rapid sintering was above the perceptibility threshold (ΔE* > 1.2), while only the polished enamel layer (ΔE* = 3.01) exceeded the acceptability threshold (ΔE* > 2.7), resulting in a clinically perceptible mismatch. Results of X-ray diffraction analysis, performed for fixed occupancy at Z_0.935Y_0.065O_0.984, revealed that rapid sintering caused a decrease in the cubic (C-) phase and an increase in the total amount of tetragonal (T-) phases. Conventionally sintered zirconia consists of 54% tetragonal (T-) and 46% cubic (C-) phase, whereas in the speed-sintered specimens, an additional T1 phase was detected (T = 49%; T1 = 27%), along with a reduced cubic fraction (C = 24%). Additionally, a small amount of the monoclinic (M) phase is noticed. Although glazing as a surface finishing procedure resulted in increased hydrophilicity, both polished and glazed surface-treated specimens showed statistically comparable cell adhesion and proliferation (p > 0.05). Conclusions: Rapid sintering induced perceptible color changes only in the enamel layer of multichromatic zirconia, suggesting that even layer-specific alterations may have an impact on the overall esthetic outcome of the final prosthetic restoration. Five times higher heating and cooling rates caused difficulty in reaching equilibrium, leading to changes in lattice parameters and the formation of the metastable T1 phase. Full article

Most commercially available InGaP/InGaAs/Ge triple-junction solar cells suffer from current mismatch due to the excess current generated by the Ge sub-cell. Combining epitaxial germanium with III–V materials would enable the realization of lattice-matched four- or five-junction solar cells, where the near-infrared spectrum could be split between two Ge sub-cells instead of one, thereby eliminating current mismatch in these devices and achieving higher conversion efficiency. In this work, we present the first demonstration of a quadruple-junction (4J) InGaP/InGaAs/Ge/Ge device, with all layers sequentially deposited in the same MOVPE growth chamber. The 4J device also features a novel architecture that exploits the “transistor effect” between the two Ge junctions to eliminate the current mismatch in the upper 3J InGaP/GaAs/Ge part. We describe the growth and the cell structure realization strategy developed to overcome—and, where beneficial, to exploit—the cross-contamination between III–V and group IV elements, thus avoiding the need for two separate deposition systems. The structural and electrical characterizations performed to ascertain the 4J device quality are presented. This result represents a key step toward the realization of highly efficient, all-MOVPE-grown, lattice-matched MJ solar structures that combine III–V and group IV alloys. Full article

This work presents an innovative hydrothermal approach for fabricating flexible piezoelectric PZT thin films on 20 μm titanium foil substrates using TiO₂ and SrTiO₃ (STO) interlayers. Three heterostructures (Ti/PZT, Ti/TiO₂/PZT, and Ti/TiO₂/STO/PZT) were synthesized to enable low-temperature growth and improve ferroelectric performance for advanced flexible MEMS. Characterizations including XRD, PFM, and P–E loop analysis evaluated crystallinity, piezoelectric coefficient d₃₃, and polarization behavior. The results demonstrate that the multilayered Ti/TiO₂/STO/PZT structure significantly enhances performance. XRD confirmed the STO buffer layer effectively reduces lattice mismatch with PZT to ~0.76%, promoting stable morphotropic phase boundary (MPB) composition formation. This optimized film exhibited superior piezoelectric and ferroelectric properties, with a high d₃₃ of 113.42 pm/V, representing an ~8.65% increase over unbuffered Ti/PZT samples, and displayed more uniform domain behavior in PFM imaging. Impedance spectroscopy showed the lowest minimum impedance of 8.96 Ω at 10.19 MHz, indicating strong electromechanical coupling. Furthermore, I–V measurements demonstrated significantly suppressed leakage currents in the STO-buffered samples, with current levels ranging from 10⁻¹² A to 10⁻⁹ A over ±3 V. This structure also showed excellent fatigue endurance through one million electrical cycles, confirming its mechanical and electrical stability. These findings highlight the potential of this hydrothermally engineered flexible heterostructure for high-performance actuators and sensors in advanced MEMS applications. Full article

With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage. GaN-HEMT devices are subject to long-term reliability due to the self-heating effect and lattice mismatch between the SiC substrate and the GaN. Depletion-mode GaN HEMTs are utilized for radio frequency applications, and this work investigates three wide-bandgap (WBG) GaN HEMT fixed-frequency oscillators with output buffers. The first GaN-on-SiC HEMT oscillator consists of an HEMT amplifier with an LC feedback network. With the supply voltage of 0.8 V, the single-ended GaN oscillator can generate a signal at 8.85 GHz, and it also supplies output power of 2.4 dBm with a buffer supply of 3.0 V. At 1 MHz frequency offset from the carrier, the phase noise is −124.8 dBc/Hz, and the figure of merit (FOM) of the oscillator is −199.8 dBc/Hz. After the previous study, the hot-carrier stressed RF performance of the GaN oscillator is studied, and the oscillator was subject to a drain supply of 8 V for a stressing step time equal to 30 min and measured at the supply voltage of 0.8 V after the step operation for performance benchmark. Stress study indicates the power oscillator with buffer is a good structure for a reliable structure by operating the oscillator core at low supply and the buffer at high supply. The second balanced oscillator can generate a differential signal. The feedback filter consists of a left-handed transmission-line LC network by cascading three unit cells. At a 1 MHz frequency offset from the carrier of 3.818 GHz, the phase noise is −131.73 dBc/Hz, and the FOM of the 2nd oscillator is −188.4 dBc/Hz. High supply voltage operation shows phase noise degradation. The third GaN cross-coupled VCO uses 8-shaped inductors. The VCO uses a pair of drain inductors to improve the Q-factor of the LC tank, and it uses 8-shaped inductors for magnetic coupling noise suppression. At the VCO-core supply of 1.3 V and high buffer supply, the FOM at 6.397 GHz is −190.09 dBc/Hz. This work enhances the design techniques for reliable GaN HEMT oscillators and knowledge to design high-performance circuits. Full article

The performance of optoelectronic devices is affected by various noise sources. A notable factor is the 4.2% lattice mismatch at the Ge/Si interface, which significantly influences the efficiency of Ge-on-Si photodetectors. These noise sources can be analyzed by examining the impact of the Ge/Si interface and deep traps on dark and photocurrents. This study evaluates the impact of these charge traps on key photodetector performance metrics, including responsivity, photo-to-dark current ratio, noise equivalent power (NEP), and specific detectivity (D^*). The trapping effects on charge transport under both forward and reverse bias conditions are monitored through hysteresis analysis. When illuminated with an unmodulated 1550 nm laser, all the key performance metrics exhibit maximum variations at a specific reverse bias. This critical bias marks the transition from saturated to exponential charge transport regimes, where intensified electric fields enhance trap-assisted recombination and thus maximize metric fluctuations. Full article

Van der Waals (vdW) heterostructures, typically composed of two-dimensional (2D) atomic layers, have attracted significant attention over the past few decades. Their performance is closely dependent on their composition and interlayer interactions. In this study, we constructed four types of 2D hexagonal BP monolayer (h-BP)/borophosphene vdW heterostructures with different stacking orders: (i) B-B stacking, (ii) P-P stacking, (iii) moire-I, and (iv) moire-II. Their structural stability and their electronic and optical properties were explored by using first-principles calculations. The results show that h-BP/borophosphene heterostructures can maintain their configurations with good structural stability and minimal lattice mismatch. All vdW heterostructures exhibit semiconducting characteristics, and their band gaps are highly dependent on interlayer stacking orders. Due to the regular atomic arrangement and enhanced interlayer dipole interactions, the B-B stacking bilayer opens a relatively large band gap of 0.157 eV, while the moire-II bilayer exhibits a very small band gap of 0.045 eV because of its irregular atom arrangements. By calculating the complex dielectric function, optical absorption spectra of B-B and P-P stacking bilayers were discussed. This study suggests that h-BP/borophosphene heterostructures have desirable optical properties, broadening the potential applications of the constituent monolayers. Full article

Medium-entropy alloys (MEAs) have attracted significant attention due to their unique structure–property relationships. In this study, we examine the effects of lattice distortion on the mechanical properties of Nb-Ti-V-Zr MEAs, focusing on two alloy series: Nb(Ti_1.5V)_xZr and Nb(TiV)_xZr (x = 1, 2, 3, 4 and 5). Experimental results show that the Nb(TiV)_xZr r alloys exhibit greater atomic size mismatches and increased lattice distortion compared to the Nb(Ti_1.5V)_xZr alloys, leading to higher yield strengths via enhanced solid-solution strengthening. However, excessive lattice distortion does not ensure an optimal strength–ductility balance, as the alloys with the highest distortion demonstrate limited plasticity. Thus, moderate reduction in lattice distortion proves beneficial in achieving an excellent compromise between strength and ductility. These findings offer valuable guidance for leveraging lattice distortion in the design of high-strength, high-ductility, body-centered cubic (BCC) MEAs for extreme environments. Full article