Taking Bismuth Titanate (Bi4Ti3O12) as a Aurivillius-type compound with m = 3 for example, the ion (W6+/Cr3+) doping effect on the lattice distortion and interlayer mismatch of Bi4Ti3O12 structure were investigated by stress analysis, based on an ela...
In this study, modeling of optimized lattice mismatch by carbon-dioxide annealing on (In, Ga) co-doped ZnO multi-deposition thin films was investigated with crystallography and optical analysis. (In, Ga) co-doped ZnO multi-deposition thin films with...
Metallic heterostructural nanocrystals (HNCs) hold immense potential in electrocatalytic carbon dioxide reduction reaction (CO2RR) owing to their abundant active sites and high intrinsic activity. However, a significant challenge still remains in ach...
In the planar-type InGaAs photodetector (PD) structure, a diffusion barrier has the effect of modifying the zinc diffusion profile in the interface between the cap and the absorption layer to improve device performance. In this work, an n-type In0.83...
In our work, the model of self-consistent electron–deformation–diffusion effects in thin films grown on substrate with the mismatch of lattice parameters of the contacting materials is constructed. The proposed theory self-consistently ta...
It has previously been reported that epitaxial growth of ZnO can be obtained at low temperatures by atomic layer deposition (ALD) onto a GaN (0001-Ga) surface, corresponding to a ~2.3% compressive lattice mismatch of the deposited ZnO. The question a...
It has been found that there are two kinds of interfaces in a Cu/Pd multilayered film, namely, cube-on-cube and twin. However, the effects of the interfacial structure and modulation period on the mechanical properties of a Cu/Pd multilayered film re...
Substrate-induced strains can significantly influence the structural properties of epitaxial thin films. In ferroelectrics, this might lead to significant changes in the functional properties due to the strong electromechanical coupling in those mate...
In this work we present the preparation and characterization of cerium doped lanthanum zirconate (LCZO) films and non-stoichiometric lanthanum zirconate (LZO) buffer layers on metallic Ni-5% W substrates using chemical solution deposition (CSD), star...
Additively manufactured medical devices require proper surface finishing before their use to remove partially adhered particles and provide adequate surface roughness. The literature widely investigates regular lattice structures—mainly scaffol...
The high-temperature creep behavior of a rafted [001] oriented AM1 Ni-based single crystal superalloy was investigated during in situ creep tests on synchrotrons. Experiments were performed at constant temperatures under variable applied stress in or...
In this study, high-entropy alloy films, namely, AlCrTaTiZr/AlCrTaTiZr-N, were deposited on the n-type (100) silicon substrate. Then, a copper film was deposited on the high-entropy alloy films. The diffusion barrier performance of AlCrTaTiZr/AlCrTaT...
As nano-electronic technology makes electronic devices gradually microscopic in size and diversified in function, obtaining new materials with superior performance is the main goal at this stage. Interfaces formed by adjacent layers of material in el...
Epitaxial growth can be used to guide the controllable growth of one metal on the surface of another substrate by matching the interface lattice, thus improving the dendrite tendency of metal growth. The atomic arrangement of the Cu (111) crystal pla...
Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) mater...
Narrow-gap InN is a desirable candidate for near-infrared (NIR) optical communication applications. However, the absence of lattice-matched substrates impedes the fabrication of high-quality InN. In this paper, we employed Molecular Beam Epitaxy (MBE...
Electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers are investigated in this work. We compare the detection parameters of detectors grown on the native GaSb substrate and lattic...
Structural analysis of epitaxial layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor (DMS), together with investigations of their magnetotransport properties, has been thoroughly performed. The obtained results are compared with tho...
If a material grows on another material with a largely different lattice constant, which of the two adapts for an energetically favorable growth? To tackle this question, we investigate the growth of Ag on Cu(111) by variable temperature scanning tun...
The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW)....
Cuprate superconductors have attracted extensive attention due to their broad promising application prospects. Among the factors affecting superconductivity, the effect of strain cannot be ignored, which can significantly enhance or degrade supercond...
Previous studies have shown that the external quantum efficiency (EQE) of conventional red Micro-Light emitting diodes(Micro-LEDs) decreases markedly with reducing chip size. This degradation is generally attributed to enhanced non-radiative recombin...
The motivation behind this work is to show that InP-based intersubband lasers with high power can be realized on substrates with significant lattice mismatch. This is a primary concern for the integration of mid-infrared active optoelectronic devices...
Lattice relaxation on wurtzite GaN microdisks grown by plasma-assisted molecular beam epitaxy was systematically studied. The lattice constants of GaN microdisks were evaluated from high-resolution transmission electron microscopy, and the anisotropi...
The epitaxial growth of high-index Fe films on MgO(113) substrates is successfully achieved using direct current (DC) magnetron sputtering, despite the significant lattice constant mismatch between Fe and MgO. X-ray diffraction (XRD) analysis is empl...
Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice...
The crystallographic-orientation relationship between GaN crystals grown via hydride vapor phase epitaxy (HVPE) on 6H-SiC was investigated. This study employed electron backscatter diffraction (EBSD) Kikuchi diffraction patterns and pole figures to i...
Mn\(_3\)Ge has a tetragonal Heusler-like D0\(_{22}\) crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epi...
Semiconductor lasers operating at the 730 nm peak wavelength have diverse applications, including biomedical diagnostics, agricultural lighting, and high-precision sensing. However, quantum well (QW) materials, commonly employed at this wavelength, o...
The poor magnetic and magneto-optical properties of BiFeO3, along with its significant lattice mismatch with silicon, have limited its application in silicon-based integrated magneto-optical devices. In this study, co-doping with Sr2+ and Ti4+ ions e...
The controlled formation of coherent interfaces in lattice-mismatched II–VI semiconductor heterostructures remains challenging. In this work, ZnSe/ZnS laminar nanomaterials were synthesized by an ultrasound-assisted reverse micelle method to de...
Heterojunction semiconductors have been extensively applied in various optoelectronic devices due to their unique carrier transport characteristics. However, it is still a challenge to construct heterojunctions based on colloidal quantum dots (CQDs)...
A system with two periodic directions carries two commuting holonomies
Cementite (Fe3C) plays a key role in determining the mechanical performance of pearlitic and heat-resistant steels, where both its intrinsic elastic properties and interfacial bonding with ferrite are critical. In this study, first-principles calcula...
In this study, InN films are grown at a relatively low temperature by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) on free-standing diamond substrates. Due to the high lattice mismatch rate betwee...
Most commercially available InGaP/InGaAs/Ge triple-junction solar cells suffer from current mismatch due to the excess current generated by the Ge sub-cell. Combining epitaxial germanium with III–V materials would enable the realization of latt...
The electrical properties of InN give it potential for applications in III-nitride electronic devices, and the use of lower-dimensional epitaxial structures could mitigate issues with the high lattice mismatch of InN to GaN (10%). N-polar MOCVD growt...
The growth of MAPbBr3 crystal-faced films is a critical challenge for advancing optoelectronic devices. This study presents a methodology for fabricating a (100) crystal-faced MAPbBr3 film on a lattice-matched MgO/TiN composite substrate using a loca...
While it is known that the double-layer Bi
Epitaxial thick films of yttrium iron garnet (YIG) are ideal for use in microwave devices due to their low losses at high frequencies. This report is on the growth of strain-engineered YIG films by liquid-phase epitaxy (LPE) on yttrium aluminum garne...
A novel type of titanium matrix composite (TMC) with a uniform network microstructure has been successfully fabricated by adjusting particle-size mismatch (Φ). This study can also improve the understanding of the effects of particle size on micro...
The role of flow velocity on the formation and dissolution of oxides on SA106Gr.B carbon steel was investigated at both microscopic and atomic scales. In static water, a compact oxide layer with highly faceted magnetite particles was formed. Atomic-s...
Stress shielding and micromotions are the most significant problems occurring at the bone-implants interface due to a mismatch of their mechanical properties. Mechanical 3D metamaterials, with their exceptional behaviour and characteristics, can prov...
We investigated the texture formation of Sb2Te thin films for phase change memory applications. The Sb2Te thin films with different thicknesses were deposited on Si (100) wafers by the magnetron sputtering method. As-deposited Sb2Te thin films were a...
The anisotropic magnetoresistance (AMR) effect is widely used in microscale and nanoscale magnetic sensors. In this study, we investigate the correlation between AMR and the crystal structure, epitaxial relationship, and magnetic properties of Co50Fe...
Medium-entropy alloys (MEAs) have attracted significant attention due to their unique structure–property relationships. In this study, we examine the effects of lattice distortion on the mechanical properties of Nb-Ti-V-Zr MEAs, focusing on two...
Electrocatalytic conversion of carbon dioxide (CO2) into specific renewable fuels is an attractive way to mitigate the greenhouse effect and solve the energy crisis. AunCu100-n/C alloy nanoparticles (AunCu100−n/C NPs) with tunable compositions,...
To provide insight into the interface structure in Ti particle-reinforced Mg matrix composites, this study investigates the inherent Mg/Ti interface structure formed during the solidification of supercooled Mg melt on a (0001)Ti substrate using ab in...
SCAM has been expected to be a suitable substrate for GaN blue-light-emitting-diodes (LEDs) and high-power high electron mobility transistors (HEMTs) because of its lower lattice mismatch to GaN than that of the widely used sapphire. Considering both...
The monolithic integration of gallium phosphide (GaP), with its green band gap, high refractive index, large optical non-linearity, and broad transmission range on silicon (Si) substrates, is crucial for Si-based optoelectronics and integrated photon...
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