Search Results (109)

We demonstrate high-performance MOSFETs on β-Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy (PA-MBE). The high crystalline quality of the β-Ga₂O₃ epilayer was confirmed by X-ray diffraction and atomic force microscopy. An optimized CF₄-plasma treatment was employed to introduce fluorine (F) into the near-surface region, effectively suppressing donor-like states. The resulting devices exhibit an ultralow off-state current of 1 × 10⁻⁹ mA/mm and a stable on/off ratio of 10⁵. A controllable positive threshold voltage shift up to +12.4 V was achieved by adjusting the plasma duration. X-ray photoelectron spectroscopy indicates that incorporated F atoms form F–Ga-related bonds and compensate oxygen-related donor defects. Sentaurus TCAD simulations reveal reduced near-surface charge and a widened depletion region, providing a physical explanation for the experimentally observed increase in breakdown voltage from 453 V to 859 V. These results clarify the role of fluorine in modulating surface defect states in PA-MBE β-Ga₂O₃ and demonstrate an effective route for threshold-voltage engineering and leakage suppression in Ga₂O₃ power devices. Full article

This work systematically investigates the heteroepitaxial growth of β-Ga₂O₃ thin films under varied substrate and temperature conditions via metalorganic chemical vapor deposition (MOCVD). Comprehensive characterization reveals that both the substrate type and growth temperature significantly influence the crystalline quality, surface morphology, chemical composition, and defect structure. Films grown at higher temperatures generally exhibit superior crystallinity and closer-to-stoichiometry composition, and thus suggest a reduction in oxygen deficiency. Certain substrates are shown to facilitate high-quality epitaxial growth with smooth surfaces and excellent crystallographic alignment. These findings offer key insights into optimizing growth parameters for high-performance β-Ga₂O₃-based devices. Full article

Van der Waals (vdW) heterostructures formed by stacking two distinct semiconductor monolayers have gained increasing research interest because of the various predicted and realized exotic phenomena that are absent in the corresponding monolayers. However, constructing such a vdW hetero-bilayer is very challenging and mostly relies on top-down mechanical methods. Here, we report a direct growth of an SnSe₂/SnSe hetero-bilayer by using molecular beam epitaxy (MBE), in which elaborate interface engineering is the key to success. Scanning tunneling microscopy (STM) characterization demonstrated the well-defined and uniform moiré patterns, indicating an atomic-scale clean and uniform SnSe₂/SnSe interface. In combination with first-principles density functional theory (DFT) calculations, we further unveiled a type-III band gap alignment between the SnSe₂ and SnSe monolayers. This work provides a new method for building vertical SnSe₂/SnSe hetero-bilayers and a novel platform for exploring functional devices based on the type-III band alignment. Full article

The scalable synthesis of high-quality single-crystal diamond films remains pivotal for next-generation extreme-performance devices. Iridium substrates offer exceptional promise for heteroepitaxy, yet early-stage growth mechanisms limiting crystal quality are poorly understood. An integrated multiscale investigation combining first-principles DFT calculations, molecular dynamics simulations, and experimental validation is presented to resolve the oriented attachment process governing diamond growth on Ir(100). Robust interfacial bonding at the interface and optimal carbon coverage are revealed to provide thermodynamic driving forces for primary nucleation. A critical angular tolerance enabling defect-free coalescence through crystallographic realignment is identified by molecular dynamics. Concurrent nucleation growth pathways are experimentally confirmed through SEM, AFM, and Raman spectroscopy, where nascent crystallites undergo spontaneous orientational registry to form continuous epitaxial domains. Grain boundary annihilation is observed upon lattice rotation aligning adjacent grains below the critical angle. Crucially, intrinsic atomic steps are generated on the resultant coalesced layer, eliminating conventional etching requirements for homoepitaxial thickening. This work advances fundamental understanding of single-crystal diamond growth mechanisms, facilitating enhanced quality control for semiconductor device manufacturing and quantum applications. Full article

Silicon-based microcavity quantum dot lasers are attractive candidates for on-chip light sources in photonic integrated circuits due to their small size, low power consumption, and compatibility with silicon photonic platforms. However, integrating components like quantum dot lasers and photodetectors on a single chip remains challenging due to material compatibility issues and mode field mismatch problems. In this work, we have demonstrated monolithic integration of an InAs quantum dot microdisk light emitter, waveguide, and photodetector on a silicon platform using a shared epitaxial structure. The photodetector successfully monitored variations in light emitter output power, experimentally proving the feasibility of this integrated scheme. This work represents a key step toward multifunctional integrated photonic systems. Future efforts will focus on enhancing the light emitter output power, improving waveguide efficiency, and scaling up the integration density for advanced applications in optical communication. Full article

In this study, the influence of HfO₂ interlayer thickness on the performance of heteroepitaxial α-Ga₂O₃ layer-based metal–insulator–semiconductor–insulator–metal (MISIM) ultraviolet photodetectors is examined. A thin HfO₂ interlayer enhances the interface quality and reduces the density of interface traps, thereby improving the performance of UVC photodetectors. The fabricated device with a 1 nm HfO₂ interlayer exhibited a significantly reduced dark current and higher photocurrent than a conventional metal–semiconductor–metal (MSM). Specifically, the 1 nm HfO₂ MISIM device demonstrated a photocurrent of 2.3 μA and a dark current of 6.61 pA at 20 V, whereas the MSM device exhibited a photocurrent of 1.1 μA and a dark current of 73.3 pA. Furthermore, the photodetector performance was comprehensively evaluated in terms of responsivity, response speed, and high-temperature operation. These results suggest that the proposed ultra-thin HfO₂ interlayer is an effective strategy for enhancing the performance of α-Ga₂O₃-based UVC photodetectors by simultaneously suppressing dark currents and increasing photocurrents and ultimately demonstrate its potential for stable operation under extreme environmental conditions. Full article

The precise control of thermal–kinetic parameters governs epitaxial perfection in functional oxide heterostructures. Herein, using Iridium/MgO(100) as a model system, the traditional “low-speed/high-temperature” paradigm is revolutionized through the combination of ab initio calculations, multiscale simulations, and subsequent deposition experiments. First-principles modeling reveals the mechanisms of Volmer–Weber (VW, island growth mode) nucleation at low coverage and Stranski–Krastanov (SK, layer-plus-island growth) transitions driven by interface metallization, stress release, and energy reduction, which facilitates coherent monolayer formation by lowering the energy barrier by ~34%. Molecular dynamics simulations demonstrate that the strategic co-optimization of substrate temperature (T_sub) and deposition rate (V_dep) induces an abrupt cliff-like drop in mosaic spread. Experimental validations confirm that this T-V synergy achieves unprecedented interfacial coherence, whereby AFM roughness reaches 0.34 nm (RMS) and the XRC-FWHM of 0.13° approaches single-crystal benchmarks. Notably, our novel “accelerated heteroepitaxy” protocol reduces growth time without compromising quality, addressing the efficiency–quality paradox in industrial-scale diamond substrate fabrication. These findings establish universal thermal–kinetic design principles applicable to refractory metal/oxide heterostructures for next-generation quantum sensors and high-power electronic devices. Full article

Epitaxial growth can be used to guide the controllable growth of one metal on the surface of another substrate by matching the interface lattice, thus improving the dendrite tendency of metal growth. The atomic arrangement of the Cu (111) crystal plane of the FCC structure is similar to that of the Zn (0002) crystal plane of the HCP structure, which is theoretically expected to promote the heterogeneous epitaxial nucleation growth of metal zinc under low strain. In this paper, the molecular dynamics method is used to simulate the atomic process of zinc film growth on the Cu (111) surface. It is found that the behavior of zinc-adsorbed atoms on the substrate surface conforms to the epitaxial growth mode. The close-packed structure grown along the (0002) direction of the layered clusters is tiled on the Cu (111) surface, forming a highly ordered low-lattice-mismatch interface. When a large area of layered zinc clusters cover the substrate, the growth mode will change from heteroepitaxial growth to homoepitaxial growth of Zn atoms on the zinc film, forming a lamellar distribution composed of FCC and HCP structure grains. Polycrystalline zinc film with a planar structure with a (0002) surface preferred a crystal plane. The increase in incident energy is helpful in improving the quality of zinc films, while the deposition rate, corresponding to the deposition temperature and electrolyte ion concentration, has no significant effect on the surface morphology and crystal structure of single metal films. In summary, the atomic arrangement of the Cu (111) surface has a strong guiding effect on the atomic ordered arrangement in the zinc film crystal, which is suitable for the epitaxial deposition of the substrate to induce the ordered growth of the Zn (0002) crystal plane. Full article

This study investigates the optical properties of yttrium ferrite thin films fabricated via pulse laser deposition. Yttrium orthoferrite, a ferrimagnetic material known for its potential applications in spintronics and photonics, was deposited on single-crystal substrates under controlled conditions to analyze its optical characteristics. The influence of deposition time on the film quality and optical properties was examined. Atomic force microscopy in contact mode revealed surface roughness variations up to 35 nm, indicating the films’ ability to cover substrate defects. Reflectance measurements determined the optical band gap, which decreased from 3.17 eV for thinner films (44 nm) to 2.91 eV for thicker films (93 nm). Forbidden electronic transitions were also observed, attributed to heteroepitaxial growth and phonon interactions. These results demonstrate the effect of film thickness on morphology and optical properties, making YFeO₃ films promising for a range of optoelectronic applications. Full article

Metal oxide core–shell fibrous nanostructures are promising gas-sensitive materials for the detection of a wide variety of both reducing and oxidizing gases. In these structures, two dissimilar materials with different work functions are brought into contact to form a coaxial heterojunction. The influence of the shell material on the transportation of the electric charge carriers along these structures is still not very well understood. This is due to homo-, hetero- and metal/semiconductor junctions, which make it difficult to investigate the electric charge transfer using direct current methods. However, in order to improve the gas-sensing properties of these complex structures, it is necessary to first establish a good understanding of the electric charge transfer in ambient air. In this article, we present an impedance spectroscopy study of networked SnO₂/Ga₂O₃ core–shell nanobelts in ambient air. Tin dioxide nanobelts were grown directly on interdigitated gold electrodes, using the thermal sublimation method, via the vapor–liquid–solid (VLS) mechanism. Two forms of a gallium oxide shell of varying thickness were prepared via halide vapor-phase epitaxy (HVPE), and the impedance spectra were measured at 189–768 °C. The bulk resistance of the core–shell nanobelts was found to be reduced due to the formation of an electron accumulation layer in the SnO₂ core. At temperatures above 530 °C, the thermal reduction of SnO₂ and the associated decrease in its work function caused electrons to flow from the accumulation layer into the Ga₂O₃ shell, which resulted in an increase in bulk resistance. The junction resistance of said core–shell nanostructures was comparable to that of SnO₂ nanobelts, as both structures are likely connected through existing SnO₂/SnO₂ homojunctions comprising thin amorphous layers. Full article

Exploring the phonon characteristics of novel group-IV binary XC (X = Si, Ge, Sn) carbides and their polymorphs has recently gained considerable scientific/technological interest as promising alternatives to Si for high-temperature, high-power, optoelectronic, gas-sensing, and photovoltaic applications. Historically, the effects of phonons on materials were considered to be a hindrance. However, modern research has confirmed that the coupling of phonons in solids initiates excitations, causing several impacts on their thermal, dielectric, and electronic properties. These studies have motivated many scientists to design low-dimensional heterostructures and investigate their lattice dynamical properties. Proper simulation/characterization of phonons in XC materials and ultrathin epilayers has been challenging. Achieving the high crystalline quality of heteroepitaxial multilayer films on different substrates with flat surfaces, intra-wafer, and wafer-to-wafer uniformity is not only inspiring but crucial for their use as functional components to boost the performance of different nano-optoelectronic devices. Despite many efforts in growing strained zinc-blende (zb) GeC/Si (001) epifilms, no IR measurements exist to monitor the effects of surface roughness on spectral interference fringes. Here, we emphasize the importance of infrared reflectivity $\mathrm{R}\left(\mathsf{\omega }\right)$ and transmission $\mathrm{T}\left(\mathsf{\omega }\right)$ spectroscopy at near normal θ_i = 0 and oblique θ_i ≠ 0 incidence (Berreman effect) for comprehending the phonon characteristics of both undoped and doped GeC/Si (001) epilayers. Methodical simulations of $\mathrm{R}\left(\mathsf{\omega }\right)$ and $\mathrm{T}\left(\mathsf{\omega }\right)$ revealing atypical fringe contrasts in ultrathin GeC/Si are linked to the conducting transition layer and/or surface roughness. This research provided strong perspectives that the Berreman effect can complement Raman scattering spectroscopy for allowing the identification of longitudinal optical ${\mathsf{\omega }}_{\mathrm{LO}}$ phonons, transverse optical ${\mathsf{\omega }}_{\mathrm{TO}}$ phonons, and LO-phonon–plasmon coupled ${\mathsf{\omega }}_{\mathrm{LPP}}^{+}$ modes, respectively. Full article

Rare-earth nitrides are an exciting family of materials with a wide variety of properties desirable for new physics and applications in spintronics and superconducting devices. Among them, samarium nitride is an interesting compound reported to have ferromagnetic behavior coupled with the potential existence of p-wave superconductivity. Synthesis of high-quality thin films is essential in order to manifest these behaviors and understand the impact that vacancies, structural distortions, and doping can have on these properties. In this study, we report the synthesis of samarium nitride monocrystalline thin films on magnesium oxide (001) substrates with a chromium nitride capping layer using molecular beam epitaxy (MBE). We observed a high-quality monocrystalline SmN film with matching orientation to the substrate, then optimized the growth temperature. Despite the initial 2 nm of growth showing formation of a potential samarium oxide layer, the subsequent layers showed high-quality SmN, with semiconducting behavior revealed by an increase in resistivity with decreasing temperature. These promising results highlight the importance of studying diverse heteroepitaxial schemes and open the door for integration of rare-earth nitrides and transition metal nitrides for future spintronic devices. Full article

Developing cost-effective methods to synthesize large-size GaN films remains a challenge owing to the high dislocation density during heteroepitaxy. Herein, AlGaN/GaN HEMTs were grown on 6- and 8-inch Si(111) substrates using metal–organic chemical vapor deposition, and their basic properties and dislocation evolution characteristics were investigated thoroughly. With the insertion of a 100 nm thin AlGaN buffer layer, bow–warp analysis of the epitaxial wafers revealed excellent stress control for both the 6- and 8-inch wafers. HR-XRD and AFM analyses validated the high crystal quality and step-flow growth mode of GaN. Further, Hall measurements demonstrated the superior transport performance of AlGaN/GaN heterostructures. It is worth noting that dislocations tended to annihilate in the AlN nucleation layer, the thin AlGaN buffer layer, and the GaN buffer layer in the initial thickness range of 200–300 nm, which was indicated by ADF-STEM. To be specific, the heterointerfaces exhibited a significant effect on the annihilation of c-type (b = <0001>) dislocations, which led to the formation of dislocation loops. The thin inserted layers within the AlGaN buffer layer played a key role in promoting the annihilation of c-type dislocations, while they exerted less influence on a-type (b = 1/3<11$\overline{2}$0>) and (a+c)-type (b = 1/3<11$\overline{2}$3>) dislocations. Within an initial thickness of 200–300 nm in the GaN buffer layer, a-type and (a+c)-type dislocations underwent strong interactions, leading to considerable dislocation annihilation. In addition, the EELS results suggested that the V-shaped pits in the AlN nucleation layer were filled with the AlGaN thin layer with a low Al content. Full article

InBi is a topological nodal line semimetal with strong spin–orbit coupling. It is epitaxially compatible with III–V semiconductors and, hence, an attractive material for topological spintronics. However, growth by molecular beam epitaxy (MBE) is challenging owing to the low melting point of InBi and the tendency to form droplets. We investigate approaches for epitaxial growth of InBi films on InSb(001) substrates using MBE and periodic supply epitaxy (PSE). It was not possible to achieve planar, stoichiometric InBi heteroepitaxy using MBE growth over the parameter space explored. However, pseudomorphic growth of ultra-thin InBi(001) layers could be achieved by PSE on InSb(001). A remarkable change to the in-plane epitaxial orientation is observed. Full article

A dense and smooth aluminium nitride thin film grown on a silicon (111) substrates using pulsed metal–organic chemical vapor deposition is presented. The influence of the pulsed cycle numbers on the surface morphology and crystalline quality of the aluminium nitride films are discussed in detail. It was found that 70 cycle numbers produced the most optimized aluminium nitride films. Field emission scanning electron microscopy and atomic force microscopy images show a dense and smooth morphology with a root-mean-square-roughness of 2.13 nm. The narrowest FWHM of the X-ray rocking curve for the AlN 0002 and 10–12 reflections are 2756 arcsec and 3450 arcsec, respectively. Furthermore, reciprocal space mapping reveals an in-plane tensile strain of 0.28%, which was induced by the heteroepitaxial growth on the silicon (111) substrate. This work provides an alternative approach to grow aluminium nitride for possible application in optoelectronic and power devices. Full article