Search Results (926)

This study primarily simulates the flashover phenomenon between the metal fittings (rods) and the skirt surface (plates) of insulators when water droplets traverse between them under heavy rain conditions. High-speed cameras recorded droplet deformation and breakdown processes, while electric field simulation software modeled the air gap’s electric field distribution. The effects of air gap length, axial position of the water droplet, droplet conductivity, droplet diameter, and voltage polarity on the DC breakdown voltage were analyzed. Results indicate that a larger air gap leads to a greater reduction in droplet breakdown voltage and lower electric field uniformity. The breakdown voltage is essentially independent of changes in the axial position of the droplet and the droplet’s conductivity. The breakdown voltage exhibits no significant correlation with droplet diameter. Droplets rarely break down when voltage is applied to the electrodes, indicating that flashover at the low-voltage end of insulators during rainfall occurs infrequently. This research holds significant importance for elucidating the flashover mechanisms of water droplets at both ends (high-voltage and low-voltage) of the insulators and for guiding the design of external insulation for power equipment. Full article

The pulsed power switch serves as a critical component in pulsed power systems. The electric radiation generated by switching operations threatens the miniaturization of pulsed power systems, causing significant electromagnetic interference (EMI) to nearby signal circuits. The pseudospark switch’s (PSS) exceptionally fast transient response, a key enabler for sophisticated pulsed power systems, is also a major source of severe EMI. This study investigated the electric field radiation from a high voltage PSS within a capacitor discharge unit (CDU), using a near-field scanning system based on an electro-optic probe. The time-frequency distribution of the radiation was characterized, identifying contributions from three sequential stages: the application of the trigger voltage, the main gap breakdown, and the subsequent oscillating high voltage. During the high-frequency oscillation stage, the distribution of the peak electric field radiation aligns with the predictions of the dipole model, with a maximum value of 43.99 kV/m measured near the PSS. The spectral composition extended to 60 MHz, featuring a primary component at 1.24 MHz and distinct harmonics at 20.14 MHz and 32.33 MHz. Additionally, the impacts of circuit parameters and trigger current on the radiated fields were discussed. These results provided essential guidance for the electromagnetic compatibility (EMC) design of highly-integrated pulsed power systems, facilitating more reliable PSS applications. Full article

Epoxy-based composites are crucial insulating and structural materials for superconducting magnets, providing mechanical strength, winding fixation, and heat transfer. However, future superconducting devices with higher integration and power will place even higher demands on their toughness, thermal conductivity, electrical insulation, and radiation resistance at low temperatures. Otherwise, problems such as cracking, detachment, and low heat dissipation efficiency will arise, which may lead to quenching of low-temperature superconductors (Nb₃Sn, NbTi) and a decline in the performance of high-temperature superconductors (YBCO). Research focuses on summarizing the recent progress in modifying epoxy resin to address these issues. The current strategies include formula optimization using mixed curing and toughening agents to enhance mechanical properties, incorporating functional fillers to improve cryogenic thermal conductivity and reduce the coefficient of thermal expansion. Studies also evaluate cryogenic electrical insulation performance (DC breakdown strength, flashover voltage) and radiation resistance under cryogenic conditions. These advancements aim to develop reliable epoxy composites, ensuring the stability and safety of superconducting magnets in applications such as particle accelerators and fusion reactors. Full article

Tip discharge in oil-immersed transformers poses a significant threat to insulation integrity. Conventional detection methods, such as gas and electrical analysis, are limited by slow response times or susceptibility to interference. Additionally, the lack of systematic comparisons between aged and fresh oil using multi-modal signal correlations hinders the development of accurate diagnostic strategies. To address this, a multi-modal sensing platform employing optical, UHF, and HFCT sensors, complemented by visual observation, was developed to investigate the evolution characteristics and mechanisms of tip discharge and to compare the detection effectiveness of these methods. Experimental results reveal that aged oil undergoes a novel four-stage evolution, where discharge signals first rise to a local peak, then experience suppression, followed by a dramatic surge, and finally decline slightly before breakdown. This process is governed by an “Impurity-Assisted Cumulative Breakdown Mechanism,” driven by impurity bridge growth and space charge effects, with signal transitions from ‘decoupling’ to synchronization. The optical sensor demonstrated superior sensitivity in early discharge stages compared to electrical methods. In contrast, fresh oil exhibited a “High-Field-Driven Stochastic Breakdown Mechanism,” with isolated pulses from micro-bubble discharges maintaining a metastable state until a critical threshold triggers instantaneous failure. This study enhances the understanding of how oil condition alters discharge mechanisms and underscores the value of multi-modal sensing for insulation condition assessment. Full article

An increasing number of different types of dielectric liquids are appearing on the market. This is undoubtedly related to sustainable development goals. This paper presents comparative studies of the lightning impulse breakdown voltage (LIBV) of six dielectric liquids with different chemical compositions: naphthenic uninhibited mineral oil (UMO), naphthenic inhibited mineral oil (IMO), natural ester (NE), synthetic ester (SE), bio-based hydrocarbon (BIO), and an inhibited liquid produced using gas-to-liquids technology (GTL). Tests were conducted in a point-to-sphere electrode configuration with a 5 mm thick pressboard barrier placed between them. This configuration was designed to more closely replicate the actual configuration found in transformers, where the oil channels are separated by pressboard barriers. Tests were performed for two inter-electrode gap distances of 25 mm and 40 mm, and for both lightning impulse voltage polarities. The pressboard barrier was placed so that the distance between point electrode and the barrier was always the same (10 mm). Measurements were performed using the step method. Before measurements began, the pressboard barrier was impregnated with the dielectric liquid being tested. The obtained measurement results were compared with previous studies conducted by the authors, which used a similar electrode system but without the pressboard barrier. The results confirmed that inserting the pressboard barrier between the electrodes effectively inhibits development of discharges and significantly increases the electrical strength of the entire insulation system. Full article

The increasing demand for reliable and efficient power electronic systems in critical applications—such as renewable energy, electric vehicles, and aerospace—has intensified the need to understand and predict failure mechanisms in power devices. This work focuses on the reliability assessment and lifetime modeling of medium-voltage power electronic components under realistic mission profiles. By combining accelerated aging tests, failure analysis, and physics-of-failure modeling, we identify dominant degradation mechanisms such as thermal cycling, partial discharge, and dielectric break-down. A hybrid methodology is proposed, integrating experimental data and simulation to predict the evolution of key parameters (e.g., on-state resistance, threshold voltage) over time. The study also explores the impact of packaging, thermal management, and environmental stresses on device robustness. The results provide valuable insights into the design of more durable power electronic converters and for the implementation of condition monitoring strategies in real-time applications. Full article

Overhead transmission lines have long relied on cross-linked polyethylene (XLPE) insulation. The production of XLPE insulation requires silane cross-linking, which generates by-products, consumes high energy, and results in poor recyclability-retired XLPE insulation can only be disposed of through incineration or landfilling. Additionally, its high density leads to increased cable weight and sag, reducing the service life of the cables. Therefore, there is an urgent need to develop recyclable and lightweight insulation materials. In this study, recyclable polypropylene (PP) was used as a substitute for XLPE. Hollow glass microspheres (HGM) were incorporated to reduce weight, and hydrogenated styrene-ethylene-butylene-styrene block copolymer (SEBS) was added for toughening, thereby constructing a PP/HGM/SEBS ternary composite system. The results show that the introduction of HGM into the PP matrix effectively reduces the material density, decreasing from 0.890 g/cm³ (pure PP) to 0.757 g/cm³—a reduction of 15%. With the addition of SEBS, the mechanical properties of the composite are significantly improved: the tensile strength increases from 14.94 MPa (PP/HGM) to 32.40 MPa, and the elongation at break jumps sharply from 72.02% to 671.22%, achieving the synergistic optimization of “weight reduction” and “strengthening-toughening”. Electrical performance tests indicate that the PP/HGM/SEBS composite exhibits a volume resistivity of 1.66 × 10¹² Ω·m, a characteristic breakdown strength of 108.6 kV/mm, a low dielectric loss tangent of 2.76 × 10⁻⁴, and a dielectric constant of 2.24. It achieves density reduction while maintaining low dielectric loss and high insulation strength, verifying its feasibility for application in lightweight insulation scenarios of overhead transmission lines. Full article

Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities in heterogeneous substrates. Herein, we systematically investigate the electrical performance and reliability of GaN-on-GaN HEMTs in comparison to conventional GaN-on-SiC HEMTs via DC characterization, reverse gate step stress, off-state drain step stress, and on-state electrical stress tests. Notably, the homogeneous epitaxial structure of GaN-on-GaN devices reduces dislocation density by 83.3% and minimizes initial tensile stress, which is obtained through HRXRD and Raman spectroscopy. The GaN-on-GaN HEMTs exhibit a record BFOM of 950 MW/cm², enabled by a low specific on-resistance (R_ON-SP) of 0.6 mΩ·cm² and a high breakdown voltage (BV) of 755 V. They withstand gate voltages up to −200 V and drain voltages beyond 200 V without significant degradation, whereas GaN-on-SiC HEMTs fail at −95 V (reverse gate stress) and 150 V (off-state drain stress). The reduced dislocation density suppresses leakage channels and defect-induced degradation, as confirmed by post-stress Schottky/transfer characteristics and Frenkel–Poole emission analysis. These findings establish GaN-on-GaN technology as a transformative solution for power electronics, offering a unique combination of high efficiency and long-term stability for demanding high-voltage applications. Full article

Gas–liquid discharge shows great promise for enhancing the efficiency of diverse energy conversion systems; however, its inherent stochasticity and instability hinder precise process control. Here, we use femtosecond laser-induced discharge combined with space–time resolution spectroscopy to achieve stable and tunable plasma generation at the gas–liquid interface. Experimental results show that the interface reduces the breakdown electric-field threshold by about 25%, shortens the breakdown delay by about 80 ns, and markedly suppresses timing jitter compared with air and the formation of high-density, low-temperature plasma, indicating that liquid-derived species participate in and reshape the ionization pathways. This work provides a controllable platform for the study of gas–liquid discharge and new insights for the design of efficient plasma auxiliary systems for multiphase flow energy conversion. Full article

Crosslinked polyethylene (XLPE) has been the cornerstone material in the power industry for insulating high-voltage cables due to its exceptional properties, including reduced dielectric loss, high dielectric constant and thermal conductivity, and excellent resistance to electrical stress. In the current study, in order to further enhance the electrical and mechanical properties of XLPE’s various types of nanofillers such as metal oxides, boron nitride nanosheets of nanosilica and graphene oxide are incorporated into the XLPE matrix. These nanoparticles promote the occurrence of numerous trap sites, even at modest concentrations, due to their extensive interfacial regions, which affect crucial characteristics including breakdown voltage strength, electrical tree growth, structural defects, space charge accumulation, and thermal aging. The present review summarizes the effects of nanoparticles on the dielectric performance of XLPE. At the same time, the current advancements in the development of a new generation of recyclable insulation materials are briefly discussed. Full article

This study demonstrates the fabrication of high-performance p-Cu₂O/n-β-Ga₂O₃ heterojunction barrier Schottky (JBS) diodes using copper as a low-work-function anode metal. By optimizing the Cu₂O spacing to 4 μm, the device achieves a turn-on voltage of 0.78 V, a breakdown voltage of 1700 V, and a specific on-resistance of 5.91 mΩ·cm², yielding a power figure of merit of 0.49 GW/cm². The JBS diode also exhibits stable electrical characteristics across the temperature range of 300–425 K. Under a 200 V reverse stress for 5000 s, the JBS diode shows only a 4.16% degradation in turn-on voltage and a 1.15-fold increase in dynamic specific on-resistance variation, highlighting its excellent resistance to stress-induced degradation. These results indicate that Cu₂O/Ga₂O₃ JBS diodes are promising candidates for next-generation high-efficiency and high-voltage power electronic applications. Full article

A novel strategy was adopted to enhance the energy storage properties of materials through constructing a vacancy defect. BaTi_1−xCu_xO_3−x (abbreviated as BTCx, x = 0–0.05) ceramics were prepared. The influences of Cu doping on structure and electrical properties were systematically investigated in this study. The result reveals that the oxygen vacancies in BTCx ceramics can inhibit grain growth and improve breakdown strength. Notably, as Cu content increases, the abundance of oxygen vacancies of the BTCx ceramics intensifies the relaxor behavior and induces double hysteresis loops with high energy storage performance. The excellent energy storage density of 1.34 J/cm³ and efficiency of 90.1% were achieved for BTC3 ceramics at 180 kV/cm, which indicates that the outstanding energy storage properties of BTCx ceramics make them have broad application prospects in advanced pulse power capacitors. Full article

A Si/SiC heterojunction double-trench MOSFET with improved conduction characteristics is proposed. By replacing the N+ source and P-ch regions with silicon, the device forms a Si/SiC heterojunction that exhibits Schottky-like characteristics, effectively deactivating the parasitic PiN body diode and improving third-quadrant performance. A high-k gate dielectric is incorporated to induce a strong electron accumulation layer at the heterointerface, thinning the energy barrier and enabling tunneling-dominated current transport, thereby significantly enhancing the first-quadrant performance. TCAD simulation results demonstrate that the proposed device achieves a specific on-resistance (R_on,sp) of 1.78 mΩ·cm², representing a 20.5% reduction compared to the conventional SiC DTMOS, while maintaining a comparable breakdown voltage (BV) of approximately 1380 V. A significant reduction in the third-quadrant turn-on voltage (V_on) is achieved with the proposed structure, from 2.74 V to 1.53 V. Meanwhile, the unipolar conduction mechanism similar to that of Schottky effectively suppresses bipolar degradation. To enhance device reliability, the design incorporates a trenched source and heavily doped P-well, which collectively mitigate high electric field concentrations at the trench corners. The proposed device offers an integration strategy enhancing both forward conduction and reverse conduction in high-voltage power electronics. Full article

Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide bandgap makes it an interesting candidate for radiation-hard particle detectors in high-energy physics and medical applications. Furthermore, the high electron and hole drift velocities in 4H-SiC enable devices suitable for ultra-fast particle detection and timing applications. However, currently, the front-end readout electronics used for 4H-SiC detectors constitute a bottleneck in investigations of the charge carrier drift. To address these limitations, a high-frequency readout board with an intrinsic bandwidth of 10 GHz was developed. With this readout, the transient current signals of a 4H-SiC diode with a diameter of 141 μm and a thickness of 50 μm upon UV laser, alpha particle, and high-energy proton beam excitation were recorded. In all three cases, the electron and hole drift can clearly be separated, which enables the extraction of the charge carrier drift velocities as a function of the electric field. These velocities, directly measured for the first time, provide a valuable comparison to Monte Carlo-simulated literature values and constitute an essential input for TCAD simulations. Finally, a complete simulation environment combining TCAD, the Allpix² framework, and SPICE simulations is presented, which is in good agreement with the measured data. Full article

The high-voltage system of high-speed trains is now in the form of combined electrical apparatus, which has a high probability of insulation breakdown due to frequent overvoltage during operation. To solve this issue, an electric field simulation model of the high-voltage combined electrical system was established, the electric field distribution of the high-voltage box electrode under overvoltage operating conditions was analyzed, and the air breakdown characteristics under field action were studied. The study shows that under overvoltage conditions, the electric field intensity near the small electrodes of the combined electrical unit is higher than the air breakdown field intensity, and the statistical time delay is approximately 5.94 μs when 150 kV voltage is applied. When the size of the connected electrode is doubled and 150 kV voltage is applied, the statistical delay is about 7.20 μs and the probability of discharge is reduced. Further installation of an insulating partition between the circuit breaker and the ground switch completely solved the problem of low electrical gap insulation capacity. Combined with impulse withstand tests, the effectiveness of the electrode size design was verified, and the research results provided theoretical support for the miniaturization and high-reliability design of vehicle-mounted high-voltage electrical appliances. Full article