Search Results (1,075)

This research study conducts a computational analysis of a two-terminal (2T) Perovskite-on-silicon (PVK-Si) solar cell with a tandem configuration. The motivation for this analysis arises from the outstanding potential of PVK-Si solar cells to surpass the efficiency limitations of conventional photovoltaic technology. The tandem configuration utilizes a combination of CsSnBr₃ in the top sub-cell and crystalline silicon (c-Si) in the bottom sub-cell. After optimizing parameters of the top sub-cell (FTO/TiO₂/CsSnBr₃/rGO/Au), which included the thicknesses of CsSnBr₃ (500 nm), TiO₂ (40 nm), rGO (50 nm), the interface defects (10¹³ cm⁻²), and the bandgap of CsSnBr₃ (1.78 eV), the PVK-Si tandem device was simulated. As a result, the top CsSnBr₃ sub-cell achieved an efficiency of 21.62%, while the bottom silicon sub-cell achieved an efficiency of 23.48%. Subsequently, the sub-cells were interconnected in series using filtered spectra and current-density matching. After interpolating the J-V curves, the tandem exhibited a global efficiency of 29.76%, a fill factor (FF) of 85.30%, a matched current density (J_SC) of 19.02 mA/cm², and an open-circuit voltage (V_OC) of 1.83 V. The EQE results confirmed efficient photon management via complementary sub-cell absorption. The performance is competitive with experimental lead-based tandems and exceeds that of current lead-free simulations. Therefore, this research proposes a viable pathway for the development of non-toxic, cost-effective tandem solar systems with manufacturing capabilities. Full article

Silicon carbide (SiC) power devices are emerging as an alternative for electrical transportation systems to improve energy efficiency, reduce carbon emissions, increase power density, and enable long-term cost savings throughout the product life cycle. Thus, a fair comparison with state-of-the-art Silicon (Si) technology is required to justify the productization of SiC devices. This work performs a systematic investigation of both technologies at the device and system levels for distinct power module voltage classes (3.3 and 6.5 kV) and circuit topologies. Initially, experimental characterization of state-of-the-art power modules is performed, followed by energy efficiency characterizations at the power converter level. Then, an electrothermal simulation model was built and validated based on experimental results. Accurate system simulations of commercial two- and three-level traction topologies were developed, focusing on efficiency over the entire load range, loadability, potential energy savings under realistic train drive cycles, and a financial comparison of inverter prices per kW. SiC exhibits lower loadability degradation at high switching frequencies (>500 Hz) than Si technology. Energy-saving potentials of 40–70% in the traction inverter with a guaranteed return on investment during the converter’s lifetime are achieved by substituting Si with SiC inverters. In addition, massive energy savings of up to 200 MWh per inverter lifetime can effectively reduce the carbon footprint of railway systems (up to ~76 t CO₂-eq saved during the inverter lifetime). This paper provides essential information for distinct stakeholders to support the decision-making process and design considerations for future railway power conversion technologies. Full article

Deep Si trenches with vertical sidewalls are critical structures in advanced MEMS sensors and microfluidic devices. (110)-oriented Si is specifically required for this purpose, as its crystallographic geometry inherently provides the nearly 90° vertical {111} planes. However, achieving precise morphology on (110) Si remains challenging due to the formation of unwanted V-shaped footing profiles at the bottom. This study establishes a systematically coupled experimental and numerical framework to investigate the anisotropic wet etching mechanism of (110) Si, quantifying the effects of KOH concentration (10–50 wt.%) and temperature (50–90 °C) on profile evolution. Experimental results demonstrate that 10 wt.% KOH at 70 °C yielded the most favorable morphology within the investigated range, with a minimized footing ratio (<2%). Based on these results, a dual-parameter kinetic regulation mechanism is proposed. Low concentration of KOH can minimize the crystallographic etching rate disparity ($\gamma$) between fast-etching {100}/{110} and slow-etching {111} planes, while the selected temperature helps maintain interfacial hydrodynamic stability. Furthermore, an Arbitrary Lagrangian-Eulerian (ALE)-based multiphysics model calibrated with Arrhenius kinetics was developed, which captures the overall trend of trench evolution and the dependence of footing formation on KOH concentration and temperature. This work not only provides a recommended process window for suppressing footing defects but also offers a trend-predictive simulation framework for orientation-dependent Si micromachining. Full article

Nanotechnology has emerged as a key driver in radioisotope batteries, which offer unique advantages for long-term, maintenance-free energy supply in deep space exploration, medical implants, and nuclear waste utilization. This review summarizes recent progress in applying nanomaterials and nanostructures to overcome the limitations of nuclear batteries, including low energy conversion efficiency and poor stability. The main content focuses on the three primary conversion mechanisms of thermoelectric, radio-voltaic, and radio-photovoltaic batteries, discussing high-performance thermoelectric nanomaterials such as SiGe alloys, wide-bandgap semiconductors including diamond and SiC for enhanced carrier collection, and nanoscale radionuclide ources to mitigate self-absorption losses. This review further elaborates on how nanostructure regulation and interface engineering have significantly improved carrier collection efficiency and device stability. These advances have enabled notable civilian applications, such as the BV100 and “Zhulong No.1” nuclear batteries. Despite this progress, challenges remain in ensuring long-term material stability under extreme environments, maintaining performance consistency during macroscopic device integration, and addressing the high fabrication costs. The review concludes by outlining future research directions, including the development of novel nanomaterial systems, innovative nanostructure designs, scalable manufacturing processes, and enhanced device stability and safety, to further advance next-generation radioisotope batteries. Full article

Wide-bandgap power devices, particularly silicon carbide (SiC) MOSFETs, have seen widespread adoption in electric vehicle (EV) motor drive systems due to their superior switching characteristics, including high switching speeds and high switching frequencies. However, these advantages exacerbate motor terminal overvoltage, with peaks reaching twice the inverter output voltage, causing insulation breakdown in windings and bearing electro-corrosion, which shorten motor lifespan. Traditional overvoltage prediction methods, such as distributed parameter models or detailed ladder network approaches, require extensive system parameters and involve high computational loads, while simplified models lack generality. To address these issues, this paper proposes a simplified prediction method based on a lumped ladder network model combined with frequency scanning. The approach uses impedance analysis to identify anti-resonance frequencies, enabling direct estimation of overvoltage amplitudes without prior knowledge of cable or motor specifics. Experimental validation on a SiC-based drive system demonstrates prediction errors below 10% and a reduction in computational time compared to conventional methods. Full article

Silicon carbide (SiC) has emerged as a highly attractive material for microelectromechanical systems (MEMS) operating in harsh environments, owing to its outstanding mechanical, thermal, and chemical properties. This review provides a comprehensive overview of the advantages and limitations of SiC-based MEMS, with particular emphasis on the strong interdependence between material structure, mechanical properties, and epitaxial growth processes. The role of defects, residual stress, and crystal quality is discussed in relation to device performance and reliability. Special attention is devoted to cubic SiC grown on silicon substrates, highlighting how growth-induced features influence the mechanical response of micromachined structures. Furthermore, a detailed analysis of the quality factor (Q-factor) is presented for 3C-SiC (111)/Si resonators, including the development of analytical models and their validation through numerical simulations performed using COMSOL Multiphysics (Version 6.1). The necessity of incorporating anisotropic loss factors in numerical modeling is demonstrated to be essential for accurately describing the experimentally observed behavior. This review aims to provide design guidelines and modeling strategies for the optimization of SiC MEMS, supporting their further development for high-performance and extreme-environment applications, including pressure sensors, mechanical resonators and high-stress-tolerant sensors. Full article

Ohmic contact resistance is a persistent and increasingly dominant bottleneck limiting the practical performance of wide-bandgap (WBG) and ultrawide-bandgap (UWBG) power semiconductor devices. This review provides a comprehensive and comparative treatment of specific contact resistivity (${\rho }_c$) phenomena across five material systems—4H-SiC, GaN, β-Ga₂O₃, AlN/AlGaN, and diamond—spanning fundamental contact physics, characterization methodology, material-specific state of the art, device context, and advanced engineering strategies. A semi-empirical scaling analysis establishes that the minimum achievable ${\rho }_c$ increases by approximately one order of magnitude per 0.8–1.0 eV increase in bandgap, arising from the interplay of Fermi-level pinning, increasing carrier effective mass, and decreasing achievable near-surface doping concentration. The best demonstrated ${\rho }_c$ values range from ~3 × 10⁻⁸ Ω·cm² for GaN epitaxially regrown contacts to ~8 × 10⁻⁵ Ω·cm² for direct AlN metallization. The transition from alloyed to regrown contacts in GaN—delivering two orders of magnitude improvement—is identified as the paradigm model for UWBG contact development, with β-Ga₂O₃ most immediately positioned to follow this trajectory. Key challenges include the absence of p-type doping in β-Ga₂O₃, near-complete Fermi-level pinning in AlN, and the unsolved shallow-donor problem in diamond. Recommendations for standardized ${\rho }_c$ measurement protocols and priority research directions are presented. Full article

Single-crystal 4H-SiC, as a wide-bandgap semiconductor material, has become a key substrate for high-power electronics and radio frequency devices due to its outstanding characteristics such as high-voltage tolerance, high-temperature stability, high-frequency efficiency and low loss. However, its inherent properties of high hardness and low fracture toughness also pose severe challenges to the ultra-precision processing of wafer substrates. In this study, through molecular dynamics methods, the influence of diamond abrasive grains with different sharpness on the processing of 4H-SiC at different grinding speeds was simulated, with a focus on analyzing its surface morphology, material removal behavior and subsurface damage characteristics. The structural evolution of 4H-SiC workpieces and diamond abrasive grains was identified through the radial distribution function, and the dynamic changes in temperature and stress during processing were further investigated to clarify the mechanism of abrasive wear and graphitization phenomena. The results show that regular octahedral abrasive grains with higher sharpness have better material removal efficiency, but they also cause more significant subsurface damage. Increasing the grinding speed helps to reduce the depth of subsurface damage. In addition, high temperature and high stress are the key factors leading to the transformation of diamond into graphite. Even under low-speed grinding conditions, the edges of the abrasive grains may still undergo graphitization due to stress concentration. The above findings have theoretical significance for an in-depth understanding of the material removal mechanism of 4H-SiC nano-grinding, and can also provide an important reference for the development of high-performance grinding wheels for SiC grinding. Full article

Thermoelectric (TE) materials offer a promising route for direct thermal-to-electrical energy conversion via the Seebeck effect. Among them, GeTe exhibits superior performance in the mid-temperature range (500–800 K), whereas (Bi,Sb)₂Te₃ is widely regarded as the benchmark material for near low-temperature applications (< 450 K). To improve TE efficiency over a wider temperature range, segmented GeTe/(Bi,Sb)₂Te₃-based single-leg TE devices were developed. Specifically, based on nanocomposite technology, B₄C and SiC nanoparticles were, respectively, introduced into GeTe and (Bi,Sb)₂Te₃, achieving optimization of electrical conductivity alongside reduction in thermal conductivity, thereby enhancing the thermoelectric figure of merit (ZT). Finite element simulations were used to optimize the geometric structure of the segmented device, determining the ideal ratio of GeTe to (Bi,Sb)₂Te₃. The simulations predicted a maximum conversion efficiency (η_max) of 16.9% when the ratio of GeTe to (Bi,Sb)₂Te₃ was 0.24, with a power density of 18.5 mW/mm². Experimentally, the fabricated segmented device attained a peak conversion efficiency of 7.14% and a power density of 12.5 mW/mm² under a hot-side temperature of 773 K. These findings confirm that strategic segmentation, combined with nanoscale phonon scattering engineering, substantially improves overall TE device performance across broad temperature range, underscoring its potential for high-efficiency thermoelectric energy conversion systems. Full article

The wide voltage range of energy storage batteries, as currently required in the electric vehicle industry, presents significant challenges for the optimal design of the dual active bridge (DAB) converters used in bidirectional DC–DC (BCD) plug-in electric vehicle (PEV) chargers and home energy management systems (HEMS) applications. This article proposes a DAB converter with an enhanced single-phase-shift (ESPS) modulation that extends the operating voltage range while maintaining zero-voltage-switching (ZVS) conditions by including a DC-blocking capacitor and modifying the trigger sequence of the bridge converter on the secondary side. The operational modes of this modulation scheme are presented, and a control strategy is developed to extend the ZVS range. To validate the concept, a 3.7 kW, 100 kHz prototype is designed and tested, interfacing a 400 V DC bus with a 400–800 V battery. Using 1200 V silicon carbide (SiC) devices, the prototype achieves a peak efficiency of 95.5%. Full article

We propose a silicon carbide (3C-SiC) periodic grating structure based on quasi-bound states in the continuum (q-BICs), which is used to significantly enhance the second-order optical nonlinear effect, including second-harmonic generation (SHG) and sum-frequency generation (SFG). By introducing a four-segment sub-wavelength grating on the SiC thin film and tailor the dimension, the structure successfully excites two q-BIC modes with ultra-high Q factor (resonant wavelengths at 1713.2 nm and 1804.6 nm respectively), realizing enhanced localization and nonlinear interaction of the strong light field. The simulation results show that under oblique incidence, the structure significantly enhances SFG efficiency and exhibits strong robustness to variations in key structural parameters. In addition, the study also reveals the coexistence of forward and backward SHG, and resonant wavelength tuning can be achieved by adjusting the structure dimension. This work not only provides a new path to enhance the nonlinear conversion efficiency of SiC thin films and solve the problem of difficult phase matching, but also lays the theoretical and technical foundation for the development of compact, efficient and integrated SiC-based nonlinear photonic devices. Full article

Chiral bound states in the continuum (BIC) metasurfaces have emerged as a promising platform for enhancing light–matter interactions, which have potential applications in advanced photonic and quantum information devices. However, simultaneously achieving near-perfect circular dichroism and highly efficient nonlinear conversion with highly symmetric structures in metasurfaces remains an open challenge. In this work, we design a $C_4$-symmetric chiral metasurface composed of eight elliptical silicon nanorods on a ${\mathrm{SiO}}_2$ substrate, where monocrystalline silicon is used as the nonlinear optical material. By combining simulations and nonlinear time-domain coupled-mode theory (TCMT), we discovered that both the optimal chirality and the nonlinear conversion efficiency can be attained simultaneously due to the critical coupling between the metasurface mode and the quasi-BIC mode. Meanwhile, a near-perfect circular dichroism (CD = 0.99) and a high nonlinear conversion efficiency of $7\times {10}^{-5}$ under a radiation intensity of $5{\mathrm{kW}/\mathrm{cm}}^2$ are numerically achieved due to the robustness of bound states in the continuum. This work offers a promising route toward high-performance chiral nonlinear photonic components, which is of great importance for the development of ultra-compact optical devices such as circular polarization detectors, chiral sensors, and nonlinear photonic chips for integrated optical and quantum information systems. Our research not only contributes to the fundamental understanding of chiral metasurfaces but also provides a practical approach for achieving high-efficiency nonlinear optical devices. Full article

Transparent heaters intended for skin-contacting applications must simultaneously satisfy optical transparency, mechanical compliance, thermal uniformity, and operational safety under biologically relevant temperature ranges. Here, we evaluate the applicability of a TiO₂/Ag/SiO₂ (TAS) dielectric–metal–dielectric transparent heater as a functional biomaterial platform for wearable and skin-integrated thermal systems. By systematically optimizing each layer thickness of the TAS structure, the heater achieves high visible-light transmittance (average of 86.6%) together with low sheet resistance on the order of 7.7 Ω/sq for low-voltage operation. The TAS heater demonstrates rapid and reproducible Joule-heating behavior, showing fast thermal response with short thermal time constants and spatially homogeneous temperature distributions without localized hot spots. Stable electrothermal performance is maintained under repeated on/off cycling and during cyclic mechanical bending down to small radii, confirming excellent mechanical stability under repeated bending relevant to wearable applications. Importantly, direct on-skin evaluations conducted by attaching the device to a human elbow reveal conformal contact, uniform heating at therapeutically relevant temperatures (50–70 °C), and stable operation under dynamic bending and extension. The absence of thermal inhomogeneity during motion highlights the intrinsic stability of the TAS architecture for skin-interfaced use. Given the high optical visibility, mechanical compliance, thermal uniformity, and electrothermal stability, the proposed TAS architecture represents a promising functional biomaterial platform for wearable thermotherapy, skin-mounted healthcare devices, and human-interactive thermal systems operating under continuous mechanical deformation and direct skin contact. Full article

Silicon carbide (SiC) MOSFETs are critical for next-generation power electronics, yet their reliability is challenged by alternating-current Bias Temperature Instability (AC BTI). While charge trapping and Recombination-Enhanced Defect Reaction (REDR) are known degradation pathways, the specific role of gate oxide thickness in determining the dominant mechanism remains unclear. This study investigates the degradation behaviors of SiC MOSFETs with varying oxide thicknesses under 150 kHz Dynamic Gate Stress. By maintaining a constant electric field, we decouple the effects of oxide thickness using high-frequency C-V, quasi-static gate current (I_GS) characteristics, and transconductance analysis. Results reveal that thin-oxide devices exhibit parallel C-V shifts and stable transconductance, indicating degradation driven by deep-level charge trapping. Conversely, thick-oxide devices display significant C-V stretch-out, negligible I_GS peak shifts, and severe transconductance degradation, accompanied by irreversible threshold voltage drift. We conclude that despite identical electric fields, the higher driving voltages in thick-oxide devices trigger severe interface state generation consistent with the REDR model, whereas thin-oxide devices are dominated by bulk oxide trapping. These findings highlight the necessity of thickness-dependent optimization strategies for SiC power devices. Full article

Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) have revolutionized modern power electronics by enabling devices that operate at higher voltages, temperatures, and switching frequencies than their silicon counterparts. This paper reviews the material properties, device architectures, fabrication techniques, and thermal management strategies that underpin the performance of GaN and SiC technologies. We highlight key trade-offs between GaN and SiC in terms of voltage blocking capability, switching efficiency, and thermal robustness and discussed their application in electric vehicles, renewable energy systems, and power converters. Market adoption trends and manufacturing challenges are also analyzed, with attention to cost-performance dynamics and packaging innovations. Finally, we address the critical role of thermal boundary resistance and emerging reliability solutions, providing a perspective on the future trajectory of WBG device research and commercialization. Full article