Search Results (76)

The accelerated global transition toward eco-friendly mobility has necessitated robust decarbonization measures across the maritime sector, with battery-powered electric propulsion ships emerging as a promising alternative. Accordingly, the applicability of silicon carbide (SiC)-based technology to propulsion inverters, a key component of such vessels, is currently under investigation. Although life cycle assessment (LCA) studies comparing conventional silicon (Si)-based and SiC-based inverters have been conducted previously, these analyses neglect realistic operating profiles and load fluctuations, limiting their applicability. Furthermore, life cycle cost assessment (LCCA) integrating real-world operating conditions has rarely been addressed. To address these gaps, this study conducted a comparative LCA and LCCA of Si IGBT and SiC MOSFET inverters for marine electric propulsion systems across three vessel types: a cruise ship, a passenger and car ship, and a recreational boat, incorporating real-world load profiles to evaluate global warming potential (GWP), fossil depletion (FD), and cumulative energy demand (CED). The static LCA results showed negligible differences between inverter types, contributing less than 1% to total impacts. The dynamic LCA demonstrated that SiC MOSFET inverters reduced environmental impacts by approximately 57%, 52%, and 34% for cruise ships, passenger and car ships, and recreational boats, respectively. Despite a 40% higher initial investment cost, SiC inverters achieved payback periods well within vessel lifetimes across all vessel types. These findings support SiC inverters as a sustainable and economically viable solution for ship electrification. Full article

The use of Silicon Carbide (SiC) MOSFETs significantly improves converter performance by increasing efficiency and reducing costs, to the detriment of electro-magnetic emission and reliability. Implementing a predictive maintenance strategy based on a prognosis tool can mitigate this limitation. This literature review offers a methodological synthesis of prognosis design tools for SiC MOSFETs, while also encompassing studies on IGBTs and silicon-based power MOSFETs where these approaches are transferable. The analysis focuses on wear-out prognosis under nominal operating conditions of standard package device, excluding environmental constraints. Articles published up to 2025 were identified in the OpenAlex database using a keyword-based search and manually filtered according to the study scope. Most reviewed works rely on Data-Based prognosis methods, mostly based on neural networks, though out-of-sample validation remains uncommon. Our study also highlights the dependence of Data-Based prognosis performance on the shape of degradation indicator trends. Moreover, the estimation of prediction uncertainty is rarely addressed in the reviewed literature. Despite notable methodological advances, ensuring the reliability of prognosis tools for SiC MOSFETs remains an ongoing research challenge. Full article

Power semiconductor devices are fundamental components in modern electronic power conversion. In applications demanding high power density and efficiency, the choice between silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETs is critical. SiC MOSFETs, owing to their high critical electric field, superior thermal conductivity, wide band gap, and low power loss, realize significant performance improvements and compact design. This work presents a comprehensive, simulation-driven comparative investigation under identical setups, evaluating both technologies across various parameters. The effects of temperature variations on gate-source threshold voltage drift, current slew rate, device stress, and energy dissipation during switching transitions are evaluated. Furthermore, the characteristic switching behavior when the DC-bus voltage, gate resistance, and load current are varied is investigated. This study addresses a current scarcity of systematic investigation by presenting a comprehensive comparative evaluation of switching losses and efficiency across varied operating conditions, providing validated conclusions for the design of advanced WBG converters. The results demonstrate that SiC exhibits lower losses and faster switching speeds than Si IGBTs, with minimal temperature-dependent loss variations, unlike Si devices, whose losses rise significantly with temperature. Si shows distinct tail currents during turn-off, absent in SiC devices. A conclusive comparative evaluation of switching energy losses under varied operating conditions demonstrates that SiC devices can effectively retrofit Si counterparts for fast, low-loss, high-efficiency applications. Full article

To enhance the operational efficiency of energy storage converters in grid-connected systems with high renewable penetration, this study systematically investigates key technologies of active neutral-point clamped (ANPC) topology under “electrical–thermal–mechanical” multi-physical field coupling. The study reviews recent progress in structural design, modulation strategies, and fault-tolerant control, highlighting their impact on efficiency, reliability, and power density. At the structural stage, a hybrid SiC/IGBT device configuration combined with a three-dimensional stacked bus reduces conduction loss and achieves parasitic inductance. In the modulation stage, improved finite-set model predictive control and adaptive space vector modulation shorten computation time to 20 µs and keep total harmonic distortion (THD) within 2.8%. System-level evaluations demonstrate that a 250 kW ANPC converter attains a peak efficiency of 99.1%, a power density of 4.5 kW/kg, and a mean time between failure exceeding 150,000 h. These findings reveal a clear transition from single-objective performance improvement toward integrated multi-physics co-design. By unifying advanced modulation, intelligent fault-tolerant control, and multi-field coupling optimization, ANPC-based converters advance converters to a new stage of higher efficiency, reliability, and stability. The results provide essential technical support for next-generation power conversion systems in renewable-rich grids. Full article

Silicon carbide (SiC) MOSFETs with voltage ratings above 3.3 kV are emerging as key enablers for next-generation medium-voltage (MV) power conversion systems, offering superior blocking capabilities, faster switching speeds, and an improved thermal performance compared to conventional silicon IGBTs. However, the practical deployment of 10 kV SiC devices remains constrained by the immaturity of high-voltage chip and packaging technologies. Current development is often limited to engineering samples provided by a few suppliers and custom packaging solutions evaluated only in laboratory settings. To advance the commercialization of 10 kV SiC power modules, this paper presents the design and characterization of a 10 kV, 60 A half-bridge module employing the XHP housing and newly developed SiC MOSFET chips from China Electronics Technology Group Corporation (CETC). Electro-thermal simulations based on a finite element analysis were conducted to extract key performance parameters, with a measured parasitic inductance of 24 nH and a thermal resistance of 0.0948 K/W. To further validate the packaging concept, a double-pulse test platform was implemented. The dynamic switching behavior of the module was experimentally verified under a 6 kV DC-link voltage, demonstrating the feasibility competitiveness of this approach and paving the way for the industrial adoption of 10 kV SiC technology in MV applications. Full article

This paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages. The p-IGBT, fabricated on an n-type substrate, offers notable commercial advantages over n-IGBTs on p-type substrates. The n-shield can effectively protect the trench gate oxide in the corners of SiC. The n-shield and n-pillar can be either floating or grounded, with the floating shield condition significantly enhancing injection and improving forward conduction performance. The superjunction floating shield p-IGBT (SJFS-p-IGBT) improves forward conduction voltage (V_F) by 47% and 15% compared to conventional planar gate p-IGBT (CP-p-IGBT) and grounded shield p-IGBT (CGS-p-IGBT), respectively. For switching characteristics, the superjunction grounded shield p-IGBT (SJGS-p-IGBT) improves turn-off time (t_off) by 15% compared to the conventional floating shield p-IGBT (CFS-p-IGBT). The trade-off between V_F and turn-off energy (E_off) is analyzed, showing that the SJFS-p-IGBT offers a better trade-off. A negative temperature coefficient is observed at high buffer layer doping concentration and elevated temperatures, leading to an increase in V_F. This provides design guidance for devices operating in parallel at high temperatures. These results demonstrate the SJ’s potential to enhance efficiency and performance for ultra-high voltage applications. Full article

Considering the cost, efficiency, power density, and other issues of the power electronic system, many papers have mixed the wide-bandgap (WBG) power devices, mainly SiC MOSFET and GaN FET/HEMT, with Si IGBT/MOSFET in the three-level active neutral-point clamped (T-ANPC) topology, forming the hybrid T-ANPC (HT-ANPC) topology. This paper reviews these latest HT-ANPC topologies from the perspective of the material types of switching devices and compares the advantages and disadvantages of various topologies. The potential challenges of HT-ANPC inverters in several mainstream applications are reviewed, and their improvements are compared and discussed in detail. Next, a brief topology selection and design process are provided based on analyzing various typical topologies. In addition, some future research trends on this topic are discussed. The paper will help researchers to select appropriate HT-ANPC topologies in different applications and have a better understanding of the critical issues to be considered during system design. Full article

The Shunt Active Filter (SAF) is an effective solution for mitigating electrical perturbations in power networks. SAFs usually consist of a voltage source inverter (VSI) with lossy transistors and bulky inductors. In this context, this article proposes analytical models to evaluate the losses and efficiency of a SAF. The models include conduction and switching losses in the transistors and diodes and are valid for both IGBT and SiC MOSFET transistors. The methodology consists of analysing the current waveform to separate the portion flowing through the transistor or diode. IGBT and SiC MOSFET are compared in two cases: firstly, the classic SAF operation with harmonic and reactive power compensation and, secondly, in the case of power injection by a photovoltaic panel or batteries, in addition to the classic SAF operation. The results are validated with real manufacturer data. A step-by-step comparison shows a good accuracy of the model. Therefore, the developed methodology is useful for a SAF designer to select relevant components for the converter and to estimate the efficiency of the system accurately and quickly. Full article

In the new energy electric drive system, the thermal stability of IGBT, a core power device, significantly impacts the system’s overall performance. Accurate IGBT temperature measurement is crucial, but traditional methods face limitations in IGBT’s compact working space. Thin-film thermocouples, with their thin and light features, offer a new solution. In this study, Ni 90% Cr 10% and Ni 97% Si 3% thin-film thermocouples were prepared on polyimide substrates via magnetron sputtering. After calibration, the Seebeck coefficient of the thin-film thermocouple temperature sensors reached 40.23 μV/°C, and the repeatability error stabilized at about 0.3% as the temperature rose, showing good stability. Researchers studied factors affecting IGBT temperature. Thin-film thermocouples can accurately monitor IGBT module surface temperature under different conditions. Compared to K-type wire thermocouples, they measure slightly higher temperatures. As the control signal’s switching frequency increases, IGBT temperature first rises then falls; as the duty cycle increases, the temperature keeps rising. This is consistent with RAC’s junction temperature prediction theory, validating the feasibility of thin-film thermocouples for IGBT chip temperature measurement. Thin-film thermocouples have great application potential in power device temperature measurement and may be a key research direction, supporting the optimization and upgrading of new energy electric drive systems. Full article

Shunt active power filters (SAPFs) have been around for a long time. They improve the quality of a current drawn from the grid when feeding non-linear loads formed by old-fashioned power electronic converters such as uncontrolled and controlled rectifiers. Most SAPFs are implemented using the well-known six-switch three-phase inverter (SSTPI) topology. This paper investigates the capability of adopting the four-switch three-phase inverter (FSTPI) scheme to develop low-cost SAPFs, mainly for low-power ranges. The performance of the proposed SAPF using the FSTPI topology is compared with the conventional scheme of an SAPF formed by the six-switch three-phase inverter (SSTPI) topology. Qualitative and quantitative analyses are conducted. The performance of the proposed FSTPI-based SAPF is investigated under different loading conditions. The obtained results indicate the validity and effectiveness of the FSTPI scheme in improving the quality of currents drawn from the AC grid. The SAPF scheme investigated is also feasible and results in cost reduction when the SAPF power circuit is constructed with modern WBG devices, such as SiC-based MOSFETs, which are relatively expensive (approximately three times the price of the equivalent Si IGBTs). Full article

With power demands continuously growing, the penetration of renewable energy resources, particularly solar photovoltaic (PV) systems, across the residential sector has been extensive. A voltage source inverter (VSI) is the key element for efficiently processing energy conversion and connecting PV systems to home loads or utility grids. The operation of this inverter relies heavily on power-switching devices, which suffer from larger power losses due to the conventional semiconductors used based on silicon (Si) material. The new materials of wide bandgap (WBG) semiconductors, for example, gallium nitride (GaN) and silicon carbide (SiC), provide remarkably distinct characteristics of semiconductor devices to minimize power loss and boost the inverter’s operational capabilities. This research paper assesses the effects of integrating SiC-MOSFET devices into VSIs in order to improve the switching behavior and efficiency level. An experimental double-pulse testing (DPT) circuit was configured and set up for investigating the switching characterization of SiC-MOSFETs compared to the widely used Si-IGBTs. Under various operating circumstances, the switching behavior of two different types of power transistors was tested while their turning-on and turning-off losses were measured. The VSI based on SiC and Si transistors was simulated to examine the performance of the inverter. The results reveal that incorporating SiC-MOSFETs into the VSI substantially enhances the switching operation and reduces total power losses while increasing the efficiency compared to the inverter based on Si-IGBTs. Full article

This study aims to conduct an assessment of the dynamic characteristics of a proposed 6.6 kW bidirectional bridgeless three-leg interleaved totem-pole power factor correction (PFC) boost converter developed for the front-end stage of electric vehicle onboard charger applications during load cycles. This proposed PFC boost converter integrates the self-developed silicon carbide (SiC) power MOSFET modules for achieving high efficiency and high power density. To assess the switching transient behavior, power loss, and efficiency of the SiC MOSFET power modules, a fully integrated electromagnetic-circuit coupled simulation (ECCS) model that incorporates an electromagnetic model, an equivalent circuit model, and an SiC MOSFET characterization model are used. In this simulation model, the impact of parasitic effects on the system’s performance is considered. The accuracy of the ECCS model is confirmed through comparing the calculated results with the experimental data obtained through the double pulse test and the closed-loop converter operation. Furthermore, a comparative study between the interleaved and non-interleaved topologies is also performed in terms of power loss and efficiency. Additionally, the performance of the SiC MOSFET-based PFC boost converter is further compared with that of the silicon (Si) insulated gate bipolar transistor (IGBT)-based one. Finally, a parametric analysis is carried out to explore the impact of several operating conditions on the power loss of the proposed totem-pole PFC boost converter. Full article

This study presents a novel topology designed to enhance the energy efficiency and quality of IGBT-based high-frequency rectifiers, which are commonly used to supply the high DC power required in industrial applications. In the proposed design, traditional silicon semiconductors are replaced with advanced SiC semiconductors, resulting in reduced switching losses and improved energy quality due to higher frequency switching. The new topology also offers solutions to challenges such as inrush current, reverse energy flow, and high DC output voltage issues typically encountered in IGBT-based rectifiers. The goal is for this topology to maximize efficiency and applicability. The proposed design is simulated in the Simulink environment, with the results presented in the findings section. To highlight the advantages of the new topology, the electrical parameters of the widely used three-phase full-bridge IGBT rectifier topology are employed for comparison. Full article

Finite Control Set Model Predictive Control emerges as a promising method for controlling power electronics inverters, outperforming traditional linear techniques. However, implementing Finite Control Set Model Predictive Control on conventional processors faces a significant computational burden due to its repetitive nature. This paper presents a novel approach that utilizes LabVIEW & Field Programmable Gate Arrays to address this computational bottleneck. By capitalizing on the inherent parallelism and suitability of Field Programmable Gate Arrays for discrete control problems, substantial computational advantages are achieved for Finite Control Set Model Predictive Control. The use of LabVIEW, a well-established platform in industrial and commercial solutions, ensures that this work is relevant not only academically but also for real-world industrial applications of FCS-MPC in power electronics and motor drives. This research successfully demonstrates the application of Finite Control Set Model Predictive Control for controlling the current of a motor-like load for a three-phase Voltage Source Inverter system in LabVIEW. To simplify the traditionally complex Field Programmable Gate Arrays programming process, user-friendly toolkits such as LabVIEW Control Design & Simulation, LabVIEW Real-Time, and LabVIEW FPGA Module are employed. This LabVIEW-based integration facilitates the execution of both concurrent and sequential Field Programmable Gate Arrays algorithms, leading to efficient Field Programmable Gate Arrays resource management and user-defined restrictions on maximum switching frequency, obviating the need for resource-intensive control methods for fast switches such as SiC and GaN IGBTs. The proposed controller is validated using an off-the-shelf computer turned into a real-time system but also on Field Programmable Gate Arrays for comparison purposes. Full article

This work investigates the performance of state-of-the-art non-commercial 6.5 kV Silicon Carbide (SiC) PiN and Junction Barrier Schottky (JBS) diodes in hybrid (Si IGBT with SiC diode) and full SiC (SiC MOSFET with SiC diode) switch topologies. The static and dynamic performance has been systematically evaluated at distinct temperatures, gate resistances and currents for each configuration. The SiC PiN diode presented higher current density capability and lower leakage current density than the JBS diode. Moreover, in most cases, the SiC PiN diode-based topologies demonstrated slightly higher total switching losses compared to the SiC JBS diode-based equivalent configurations. A loadability analysis in a three-level NPC converter is presented to evaluate the potential of each configuration in a converter application. The SiC PiN technology presented a 25% power extension compared to the SiC JBS technology with similar efficiency at typical industrial drives switching frequency operation when comparing same-active-area diode technologies. Finally, a long-term reliability test (H3TRB) is presented to demonstrate the SiC PiN diode technology’s potential for operation in harsh environments. Such characteristics show the advantage of the 6.5 kV SiC PiN diode when a high current density (>100 A/cm²), high efficiency and reliability are required. Full article