Search Results (24)

Silicon photonic integrated circuit (Si-PIC) components/devices based on silicon-on-insulator (SOI) waveguides have become critical components in modern optoelectronic information systems. This investigation systematically examines optical propagation losses (OPLs) induced by the sidewall roughness (SWR) of a waveguide through comparative analysis of two scattering-loss theoretical frameworks: the SWR-improved Payne–Lacey (P-L) three-dimensional (3-D) formalism and Hörmann’s 3-D perturbation model. Crucially, our computational results identify SWR = 10 nm as the convergence threshold where both models exhibit consistent OPL predictions across waveguide architectures. Single-mode SOI rib waveguides with 0.5 µm high ribs on 2.0 µm silicon film and a 2.0 μm BOX layer were designed and fabricated using the classic ICP-RIE technique. Furthermore, SWRs of 28 nm were obtained with confocal laser scanning microscopy for SOI waveguides, leading to OPLs of 2.66 and 2.67 dB/cm for TE and TM modes, respectively, from the 2-D SWR-enhanced P-L model, and 1.7 and 1.9 dB/cm, respectively, from the Hörmann 3-D model. Finally, the average experimental result of OPL for the same waveguide was 2.61 dB/cm, showing a strong agreement with the numerical values of the SWR-improved P-L 3-D formalism, providing a robust framework for optimizing industrial-grade SOI waveguide-based PIC devices/components. Full article

Inductively coupled plasma–reactive etching (ICP-RIE) of InGaZnO (IGZO) thin films was studied with variations in gas mixtures of hydrochloride (HCl) and argon (Ar). The dry etching characteristics of the IGZO films were investigated according to radiofrequency bias power, gas mixing ratio, and chamber pressure. The IGZO film showed an excellent etch rate of 83.2 nm/min from an optimized etching condition such as a plasma power of 100 W, process pressure of 3 mTorr, and HCl ratio of 75% (HCl:Ar at 30 sccm:10 sccm). In addition, this ICP-RIE etching condition with a high HCl composition ratio at a moderate RIE power of 100 W showed a low etched pattern skew and low photoresist damage on the IGZO patterns. It also provided excellent surface morphology of the SiO₂ film underneath after the entire dry etching of the IGZO layer. The IGZO thin film as an active layer was successfully patterned under the ICP-RIE dry etching under the HCl-Ar gas mixture, affording an excellent electrical characteristic in the resultant top-gate IGZO thin-film transistor. Full article

In this paper, we report the growth of high-quality ${\mathrm{In}}_{0.59}{\mathrm{Ga}}_{0.41}\mathrm{As}/{\mathrm{In}}_{0.37}{\mathrm{Al}}_{0.63}\mathrm{As}$ strain-balanced quantum cascade lasers (QCLs) in the low-pressure MOCVD production type multi-wafer planetary reactor addressing, in particular, quality and scaled manufacturing issues. Special attention was given to achieving the sharp interfaces (IFs), by optimizing the growth interruptions time and time of exposure of InAlAs layer to oxygen contamination in the reactor, which all result in extremely narrow IFs width, below 0.5 nm. The lasers were designed for emission at $7.7\mu$m. The active region was based on diagonal two-phonon resonance design with 40 cascade stages. For epitaxial process control, the High Resolution X-Ray Diffraction (HR XRD) and Transmission Electron Microscopy (TEM) were used to characterize the structural quality of the QCL samples. The grown structures were processed into mesa Fabry-Perot lasers using dry etching RIE ICP processing technology. The basic electro-optical characterization of the lasers is provided. We also present results of Green’s function modeling of QCLs and demonstrate the capability of non-equilibrium Green’s function (NEGF) approach for sophisticated, but still computationally effective simulation of laser’s characteristics. The sharpness of the grown IFs was confirmed by direct measurements of their chemical profiles and as well as the agreement between experimental and calculated wavelength obtained for the bandstructure with ideally abrupt (non-graded) IFs. Full article

Black silicon has attracted significant interest for various engineering applications, including solar cells, due to its ability to create highly absorbent surfaces or interfaces for light. It enhances light absorption in crystalline solar cells, improving the efficiency of converting incident light into electricity for photovoltaic applications. This research focused on fabricating nanostructures that played a critical role in enhancing light absorption in the upper layers of solar cells. These nanostructures were created using the black silicon method, forming a layer known as “black silicon”. The coating not only improved the efficiency of crystalline solar cells but also enhanced their stability. The antireflection coating, composed of nanostructures with various shapes, including conical, pillar-like, and spike-like forms, achieved a reflectivity as low as 10% in the spectral range of 400–700 nm. This corresponded to a sample with α = 0.85 and a chuck bias of 4 W. An Inductively Coupled Plasma Reactive Ion Etching (ICP RIE) machine was employed to develop and control the specific shape, size, and density of the fabricated black silicon, which was then subjected to testing. The efficiency of the black silicon photovoltaic cell was 23.3%. Full article

The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and dry etching using an ion beam (RIE—reactive ion etching). The deep-level transient spectroscopy (DLTS) method was used to determine the defect levels occurring in the analyzed structures. The obtained results indicate that the choice of etching method affects the occurrence of additional defect levels in the MCT material, but it has no significance for InAs/InAsSb T2SLs. Full article

In this paper, multifunctional, multilevel phase plates of quartz substrate were efficiently prepared by using a newly developed polygon scanner-based femtosecond laser photolithography system combined with inductively coupled discharge plasma reactive-ion etching (ICP-RIE) technology. The femtosecond laser photolithography system can achieve a scanning speed of 5 m/s and a preparation efficiency of 15 cm²/h while ensuring an overlay alignment accuracy of less than 100 nm and a writing resolution of 500 nm. The ICP-RIE technology can control the etching depth error within ±5 nm and the mask-to-mask edge error is less than 1 μm. An 8-level Fresnel lens phase plate with a focal length of 20 mm and an 8-level Fresnel axicon phase plate with a cone angle of 5° were demonstrated. The diffraction efficiency was greater than 93%, and their performance was tested for focusing and glass cutting, respectively. Combined with the high-speed femtosecond laser photolithography system’s infinite field-of-view (IFOV) processing capability, the one-time direct writing preparation of phase plate masks of different sizes was realized on a 6-inch wafer. This is expected to reduce the production cost of quartz substrate diffractive optical elements and promote their customized mass production. Full article

In this study, we conducted an optimization of a low-damage selective etching process utilizing inductively coupled plasma-reactive ion etch (ICP-RIE) with a fluorine-based gas mixture. This optimization was carried out for the fabrication of p-GaN gated AlGaN/GaN enhancement-mode (E-mode) heterojunction field-effect transistors (HFETs). The optimum process conditions resulted in an etch selectivity of 21:1 (=p-GaN:Al_0.2Ga_0.8N) with a p-GaN etch rate of 5.2 nm/min and an AlGaN etch rate of 0.25 nm/min. In comparison with an oxygen-based selective etching process, the fluorine-based selective etching process demonstrated reduced damage to the etched surface. This was confirmed through current–voltage characteristics and surface roughness inspections. The p-GaN gated AlGaN/GaN E-mode device, fabricated using the optimized fluorine-based selective etching process, achieved a high threshold voltage of 3.5 V with a specific on-resistance of 5.3 mΩ.cm² for the device and with a gate-to-p-GaN gate distance of 3 μm, a p-GaN gate length of 4 μm, and a p-GaN gate-to-drain distance of 12 μm. The catastrophic breakdown voltage exceeded 1350 V. Full article

Single LiNbO₃ (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant polarizations. However, challenges remain regarding their nanofabrication that hinder their applications. The prevailing etching techniques for LNO encompass dry etching, wet etching, and focused-ion-beam etching, each having distinct merits and demerits. Achieving higher etching rates and improved sidewall angles presents a challenge in LNO nanofabrication. Building upon the current etching researches, this study explores various etching methods using instruments capable of generating diverse plasma densities, such as dry etching in reactive ion etching (RIE) and inductively coupled plasma (ICP), proton exchange-enhanced etching, and wet chemical etching following high-temperature reduction treatment, as well as hybrid dry and wet etching. Ultimately, after employing RIE dry etching combined with wet etching, following a high-temperature reduction treatment, an etching rate of 10 nm/min and pretty 90° sidewall angles were achieved. Furthermore, high etching rates of 79 nm/min with steep sidewall angles of 83° were obtained using ICP dry etching. Additionally, using SiO₂ masks, a high etching rate of 108 nm/min and an etching selectivity ratio of 0.86:1 were achieved. Distinct etching conditions yielded diverse yet exceptional results, providing multiple processing paths of etching for the versatile application of LNO. Full article

The light extraction efficiency of an LED is dependent on its surface texture. However, the surface of the p-GaN layer is not easy to be etch with inverted hexagonal pyramid structures (IHPS) with small top widths and large depths using existing methods. Therefore, it is important to discuss the expected effect of the conditions of thermal annealing and inductively coupled plasma (ICP) reactive ion etching (RIE) for the generation of nano-pin-holes in the photoresist and fabrication of the top surface structure of GaN-based LEDs, in order to enhance the light output power. In this study, the following four items will be discussed: (1) the effect of thermal annealing on the composition of the photoresist; (2) the effect of thermal annealing and ICP RIE on the generation of the nano-pin-holes in the photoresist; (3) the effect of ICP RIE on the IHPS; and (4) the effect of surface texture of the IHPS on the light output power. It has been found that a nano-pin-hole structure in the photoresist etching mask is needed for the fabrication of many IHPS on the LED surface. A maskless via-hole etching technique was used for texturing the photoresist to produce nano-pore structures with diameters of less than 50 nm. The relationship between the light extraction efficiency and the surface texture is discussed in detail. The simulation results show the best light extraction efficiency (LEE) ratio of 358% to be obtained when the distance between two neighboring IHPS patterns (DBNP) is 300 nm. This in turn allowed the formation of IHPS with small top widths and large depths on the LED surface. A LEE ratio of 305% was obtained with the fabrication of IHPS with a top width of 290 nm, a depth of 170 nm and a DBNP of 180 nm on the LED surface. Full article

The mechano-bactericidal action of nanostructured surfaces is well-documented; however, synthetic nanostructured surfaces have not yet been explored for their antifungal properties toward filamentous fungal species. In this study, we developed a biomimetic nanostructured surface inspired by dragonfly wings. A high-aspect-ratio nanopillar topography was created on silicon (nano-Si) surfaces using inductively coupled plasma reactive ion etching (ICP RIE). To mimic the superhydrophobic nature of insect wings, the nano-Si was further functionalised with trichloro(1H,1H,2H,2H-perfluorooctyl)silane (PFTS). The viability of Aspergillus brasiliensis spores, in contact with either hydrophobic or hydrophilic nano-Si surfaces, was determined using a combination of standard microbiological assays, confocal laser scanning microscopy (CLSM), and focused ion beam scanning electron microscopy (FIB-SEM). Results indicated the breakdown of the fungal spore membrane upon contact with the hydrophilic nano-Si surfaces. By contrast, hydrophobised nano-Si surfaces prevented the initial attachment of the fungal conidia. Hydrophilic nano-Si surfaces exhibited both antifungal and fungicidal properties toward attached A. brasisiensis spores via a 4-fold reduction of attached spores and approximately 9-fold reduction of viable conidia from initial solution after 24 h compared to their planar Si counterparts. Thus, we reveal, for the first time, the physical rupturing of attaching fungal spores by biomimetic hydrophilic nanostructured surfaces. Full article

We present a process flow for wafer-scale fabrication of a surface phase grating with sub-micron feature sizes from a single semiconductor material. We demonstrate this technique using a 110-oriented GaP semiconductor wafer with second-order nonlinearity to obtain a nanostructured device (800 nm lateral feature size and a 245 nm height modulation) with applications relevant to near-infrared optical diffraction and time-resolved terahertz (THz) technologies. The fabrication process involves a plasma-enhanced chemical deposition of a SiO₂ layer on the wafer followed by contact photolithography and inductively coupled plasma reactive ion etching (ICP-RIE). We discuss the required radiation dosage, exposure times, temperatures and other key parameters to achieve high-quality nanogratings in terms of filling ratio, edge profile, and overall shape. The phase-grating properties, such as the pitch, spatial homogeneity, and phase retardation, are characterized with an atomic force microscope, scanning electron microscope and a non-invasive optical evaluation of the optical diffraction efficiency into different orders. We demonstrate an application of this device in a time-domain THz spectroscopy scheme, where an enhanced THz spectral bandwidth is achieved by optical rectification of near-infrared laser pulses incident on the grating and efficiently diffracted into the first orders. Finally, the reported process flow has the potential to be applied to various materials by considering only slight adjustments to the ICP-RIE etching steps, paving the way to scalable fabrication of sub-micron patterns on a large range of substrates. Full article

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O₂ addition to the SF₆ plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport. Full article

Due to its high theoretical specific capacity, a silicon anode is one of the candidates for realizing high energy density lithium-ion batteries (LIBs). However, problems related to bulk silicon (e.g., low intrinsic conductivity and massive volume expansion) limit the performance of silicon anodes. In this work, to improve the performance of silicon anodes, a vertically aligned n-type silicon nanowire array (n-SiNW) was fabricated using a well-controlled, top-down nano-machining technique by combining photolithography and inductively coupled plasma reactive ion etching (ICP-RIE) at a cryogenic temperature. The array of nanowires ~1 µm in diameter and with the aspect ratio of ~10 was successfully prepared from commercial n-type silicon wafer. The half-cell LIB with free-standing n-SiNW electrode exhibited an initial Coulombic efficiency of 91.1%, which was higher than the battery with a blank n-silicon wafer electrode (i.e., 67.5%). Upon 100 cycles of stability testing at 0.06 mA cm⁻², the battery with the n-SiNW electrode retained 85.9% of its 0.50 mAh cm⁻² capacity after the pre-lithiation step, whereas its counterpart, the blank n-silicon wafer electrode, only maintained 61.4% of 0.21 mAh cm⁻² capacity. Furthermore, 76.7% capacity retention can be obtained at a current density of 0.2 mA cm⁻², showing the potential of n-SiNW anodes for high current density applications. This work presents an alternative method for facile, high precision, and high throughput patterning on a wafer-scale to obtain a high aspect ratio n-SiNW, and its application in LIBs. Full article

This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a number of reasons, primarily because it allows the resultant device dimensions to be more accurately and precisely controlled. This directly leads to a reduction in development costs as well as improved production yields. Nevertheless, traditional RIE was limited to moderate etch depths (e.g., a few microns). More recent developments in newer RIE methods and equipment have enabled considerably deeper etches and higher aspect ratios compared to traditional RIE methods and have revolutionized bulk micromachining technologies. The most widely known of these technologies is called the inductively-coupled plasma (ICP) deep reactive ion etching (DRIE) and this has become a mainstay for development and production of silicon-based micro- and nano-machined devices. This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials. Full article

This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the TMAH solution is detailed; we found that the m-GaN plane has lower surface roughness than crystallographic planes with other orientations, including the a-GaN plane. The grooves and slope (Cuboids) at the channel base are also investigated. The agitation does not assist in Cuboid removal or crystallographic planes etching rate enhancement. Finally, the impact of UV light on m and a-GaN crystal plane etching rates in TMAH has been studied with and without UV light. Accordingly, it is found that the m-GaN plane etching rate is enhanced from 0.69 to 1.09 nm/min with UV light; in the case of a-GaN plane etching, UV light enhances the etching rate from 2.94 to 4.69 nm/min. Full article