Search Results (1,022)

Background/Objectives: Guided bone regeneration (GBR) requires barrier membrane materials that balance biodegradation with mechanical stability. Magnesium (Mg)-based metals have good prospects for use as biodegradable barrier materials due to their elastic modulus, good biocompatibility, and osteogenic properties. In this study, gallium (Ga) was introduced into Mg to enhance the mechanical strength and optimize the degradation behavior of the alloy, addressing the limitations of conventional magnesium alloys in corrosion control and strength retention. Methods: Mg-xGa alloys (x = 1.0–3.0%, wt.%) were evaluated for biocompatibility, degradation, and osteogenic potential. Corrosion rates were calculated via weight loss, Mg²⁺ release, and pH changes. Osteogenic effects were assessed using rat bone marrow mesenchymal stem cells (rBMSCs) for alkaline phosphatase (ALP) activity, extracellular matrix (ECM) mineralization, and osteogenic-related gene expression. Optimal alloy was fabricated into barrier membranes with different pore sizes (0.85–1.70 mm) for the rabbit mandibular defect to evaluate the porosity effect on new bone formation. Results: Cytocompatibility tests established a biosafety threshold for Ga content below 3 wt.%. Mg-1Ga demonstrated uniform corrosion with a rate of 1.02 mm/year over 28 days. In vitro, Mg-1Ga enhanced ALP activity, ECM mineralization, and osteogenic gene expression. The 1.70 mm pore size group exhibited superior new bone formation and bone mineral density at 4 and 8 weeks. Conclusions: These results highlight Mg-1Ga’s biocompatibility, controlled degradation, and osteogenic properties. Its optimized pore design bridges the gap between collagen membranes’ poor strength and titanium meshes’ non-degradability, offering a promising solution for GBR applications. Full article

This paper presents the design, implementation, and characterization of a broadband power amplifier (PA) with a reconfigurable architecture, capable of efficient operation across a wide frequency range of 0.2–3.6 GHz. Leveraging Gallium Nitride (GaN) devices, the PA achieves high efficiency and power, essential for broadband and high-frequency applications. By swapping the roles of the main and peak amplifiers, the PA achieves Doherty behavior at two related frequencies, 1.4 and 2.8 GHz, where the first is exactly half of the second, while maintaining consistent efficiency and output power across the remaining band in non-Doherty modes. Characterization results confirm the reliability and versatility of the proposed design, showcasing its ability to deliver robust performance across both Doherty and non-Doherty operational ranges. This combination of GaN technology and innovative reconfigurability makes the PA highly suitable for broadband applications requiring high efficiency, flexibility, and wideband coverage. Moreover, the simplicity of the proposed design makes it not only practical for implementation but also highly competitive among state-of-the-art solutions. Full article

The development of high-performance solid electrolytes is critical to advancing solid-state lithium-ion batteries (SSBs), with lithium lanthanum zirconium oxide (LLZO) emerging as a leading candidate due to its chemical stability and wide electrochemical window. In this study, we systematically investigated the effects of cation dopants, including aluminum (Al³⁺), tantalum (Ta⁵⁺), gallium (Ga³⁺), and rubidium (Rb⁺), on the structural, electronic, and ionic transport properties of LLZO using density functional theory (DFT) and ab initio molecular dynamics (AIMD) simulations. It appeared that, among all simulated results, Al-LLZO exhibits the highest ionic conductivity of 1.439 × 10⁻² S/cm with reduced activation energy of 0.138 eV, driven by enhanced lithium vacancy concentrations and preserved cubic-phase stability. Ta-LLZO follows, with a conductivity of 7.12 × 10⁻³ S/cm, while Ga-LLZO and Rb-LLZO provide moderate conductivity of 3.73 × 10⁻³ S/cm and 3.32 × 10⁻³ S/cm, respectively. Charge density analysis reveals that Al and Ta dopants facilitate smoother lithium-ion migration by minimizing electrostatic barriers. Furthermore, Al-LLZO demonstrates low electronic conductivity (1.72 × 10⁻⁸ S/cm) and favorable binding energy, mitigating dendrite formation risks. Comparative evaluations of radial distribution functions (RDFs) and XRD patterns confirm the structural integrity of doped systems. Overall, Al emerges as the most effective and economically viable dopant, optimizing LLZO for scalable, durable, and high-conductivity solid-state batteries. Full article

With the rapid increase in global lithium demand, the exploration of newly discovered lithium in the bauxite of the Wenshan area in southeastern Yunnan has become increasingly important. However, the current research on clay-type lithium in the Wenshan area has primarily focused on local exploration, and large-scale predictive metallogenic studies remain limited. To address this, this study utilized multi-source remote sensing data from ZY1-02D and ASTER, combined with ALOS 12.5 m DEM and Sentinel-2 imagery, to carry out remote sensing mineral identification, structural interpretation, and prospectivity mapping for clay-type lithium in the Wenshan area. This study indicates that clay-type lithium in the Wenshan area is controlled by NW, EW, and NE linear structures and are mainly distributed in the region from north of the Wenshan–Malipo fault to south of the Guangnan–Funing fault. High-value areas of iron-rich silicates and iron–magnesium minerals revealed by ASTER data indicate lithium enrichment, while montmorillonite and cookeite identification by ZY1-02D have strong indicative significance for lithium. Field verification samples show the highest Li₂O content reaching 11,150 μg/g, with six samples meeting the comprehensive utilization criteria for lithium in bauxite (Li₂O ≥ 500 μg/g) and also showing an enrichment of rare earth elements (REEs) and gallium (Ga). By integrating stratigraphic, structural, mineral identification, geochemical characteristics, and field verification data, ten mineral exploration target areas were delineated. This study validates the effectiveness of remote sensing technology in the exploration of clay-type lithium and provides an applicable workflow for similar environments worldwide. Full article

In this paper, the accuracy of basic and advanced spiral inductor models for gallium nitride (GaN) integrated inductors is evaluated. Specifically, the experimental measurements of geometrically scaled circular spiral inductors, fabricated in a radio frequency (RF) GaN-on silicon technology, are exploited to estimate the errors of two lumped geometrically scalable models, i.e., a simple π-model with seven components and an advanced model with thirteen components. The comparison is performed by using either the standard performance parameters, such as inductance (L), quality factor (Q-factor), and self-resonance frequency (SRF), or the two-port scattering parameters (S-parameters). The comparison reveals that despite a higher complexity, the developed advanced model achieves a significant reduction in SRF percentage errors in a wide range of geometrical parameters, while enabling an accurate estimation of two-port S-parameters. Indeed, the correct evaluation of both SRF and two-port S-parameters is crucial to exploit the model in an actual circuit design environment by properly setting the inductor geometrical parameters to optimize RF performance. Full article

Efficient detection of toxic and flammable vapors remains a major technological challenge, especially for environmental and industrial applications. This paper reports on the fabrication technology and gas-sensing properties of nanostructured Ga₂O₃/GaS_0.98Se_0.02. The β-Ga₂O₃ nanowires/nanoribbons with inclusions of Ga₂S₃ and Ga₂Se₃ microcrystallites were obtained by thermal treatment of GaS_0.98Se_0.02 slabs in air enriched with water vapors. The microstructure, crystalline quality, and elemental composition of the obtained samples were investigated using electron microscopy, X-ray diffraction, and Raman spectroscopy. The obtained structures show promising results as active elements in gas sensor applications. Vapors of methanol (CH₃OH), ethanol (C₂H₅OH), and acetone (CH₃-CO-CH₃) were successfully detected using the nanostructured samples. The electrical signal for gas detection was enhanced under UV light irradiation. The saturation time of the sensor depends on the intensity of the UV radiation beam. Full article

Gallium nitride (GaN) enhancement-mode high-electron-mobility transistors ( E-HEMTs) deliver superior performance compared to traditional silicon (Si) and silicon carbide (SiC) counterparts. Their faster switching speeds, lower on-state resistances, and higher operating frequencies enable more efficient and compact power converters. However, their integration into high-power applications is limited by critical reliability concerns, particularly regarding their short-circuit (SC) withstand capability and overvoltage (OV) resilience. GaN devices typically exhibit SC withstand times of only a few hundred nanoseconds, needing ultrafast protection circuits, which conventional desaturation (DESAT) methods cannot adequately provide. Furthermore, their high switching transients increase the risk of false activation events. The lack of avalanche capability and the dynamic nature of GaN breakdown voltage exacerbate issues related to OV stress during fault conditions. Although SC-related behaviour in GaN devices has been previously studied, a focused and comprehensive review of protection strategies tailored to GaN technology remains lacking. This paper fills that gap by providing an in-depth analysis of SC and OV failure phenomena, coupled with a critical evaluation of current and next-generation protection schemes suitable for GaN-based high-power converters. Full article

Gallium nitride high-electron-mobility transistors (GaN HEMTs) are critical for high-power applications like AI power supplies and robotics but face reliability challenges due to increased dynamic ON-resistance (R_{DS_ON}) from electrical and thermomechanical stresses. This paper presents a novel self-calibrating temperature-sensitive electrical parameter (TSEP) model that uses gate leakage current (I_G) to estimate junction temperature with high accuracy, uniquely addressing aging effects overlooked in prior studies. By integrating I_G, aging-induced degradation, and failure-in-time (FIT) models, the approach achieves a junction temperature estimation error of less than 1%. Long-term hard-switching tests confirm its effectiveness, with calibrated R_{DS_ON} measurements enabling precise remaining useful life (RUL) predictions. This methodology significantly improves GaN HEMT reliability assessment, enhancing their performance in resilient power electronics systems. Full article

The increasing need for high-data-rate wireless applications in 5G and IoT networks requires sophisticated power amplifier (PA) designs in the sub-6 GHz spectrum. This work introduces a high-efficiency Gallium Nitride (GaN)-based power amplifier optimized for the 2.3–2.5 GHz frequency band, using digital pre-distortion (DPD) to improve spectral fidelity and reduce distortion. The design employs load modulation and dynamic biasing to optimize power-added efficiency (PAE) and linearity. Simulation findings indicate a gain of 13 dB, a 3 dB compression point at 29.7 dBm input power, and 40 dBm output power, with a power-added efficiency of 60% and a drain efficiency of 65%. The power amplifier achieves a return loss of more than 15 dB throughout the frequency spectrum, ensuring robust impedance matching and consistent performance. Electromagnetic co-simulations confirm its stability under high-frequency settings, rendering it appropriate for next-generation high-efficiency wireless communication systems. Full article

The initial surface reaction of gallium nitride (GaN) grown by atomic layer deposition (GaN-ALD) was investigated using density functional theory (DFT) calculations. Trimethylgallium (TMG) and ammonia (NH₃) were used as gallium (Ga) and nitrogen (N) precursors, respectively. DFT calculations at the B3LYP/6-311+G(2d,p) and 6-31G(d) levels were performed to compute relative energies and optimize chemical structures, respectively. TMG adsorption on Si₁₅H₁₈–(NH₂)₂ and Si₁₅H₂₀=(NH)₂ clusters was modeled, where –NH₂ and =NH surface species served as adsorption sites. The reaction mechanisms in the adsorption and nitridation steps were investigated. The results showed that TMG can adsorb on both surface adsorption sites. In the initial adsorption stage, TMG adsorbs onto =NH- and –NH₂-terminated Si(100) surfaces with activation energies of 1.11 and 2.00 eV, respectively, indicating that the =NH site is more reactive. During subsequent NH3 adsorption, NH₃ adsorbs onto the residual TMG on the =NH- and –NH₂-terminated surfaces with activation energies of approximately 2.00 ± 0.02 eV. The reaction pathways indicate that NH₃ adsorbs via similar mechanisms on both surfaces, resulting in comparable nitridation kinetics. Furthermore, this study suggests that highly reactive NH₂⁻ species generated in the gas phase from ionized NH₃ may help reduce the process temperature in the GaN-ALD process. Full article

Propylene production through the CO₂-assisted oxidative dehydrogenation of propane (CO₂-ODP) is an effective route able to address the ever-increasing demand for propylene and simultaneously utilize CO₂. In this study, a series of alumina-supported gallium oxide catalysts of variable Ga₂O₃ loading was synthesized, characterized, and evaluated with respect to their activity for the CO₂-ODP reaction. It was found that both the catalysts’ physicochemical characteristics and performance were strongly affected by the amount of Ga₂O₃ dispersed on Al₂O₃. Surface basicity was maximized for the sample containing 20 wt.% Ga₂O₃, whereas surface acidity was monotonically increased with increasing Ga₂O₃ loading. A volcano-type correlation was found between catalytic performance and acid/base properties, according to which propane conversion and propylene yield exhibited optimum values for intermediate surface basicity and acidity, which both correspond to the sample containing 30 wt.% Ga₂O₃. The dispersion of a suitable amount of Ga₂O₃ on the Al₂O₃ surface not only enhances the conversion of propane to propylene but also suppresses the formation of side products (C₂H₄, CH₄, and C₂H₆) at temperatures of practical interest. The 30%Ga₂O₃-Al₂O₃ catalyst exhibited very good stability at 550 °C, where byproduct formation and carbon deposition were limited. Mechanistic studies indicated that the reaction proceeds through a two-step oxidative route with the participation of CO₂ in the abstraction of H₂, originating from propane dehydrogenation, through the reverse water–gas reaction (RWGS) reaction, shifting the thermodynamic equilibrium towards propylene generation. Full article

Gallium oxide (Ga₂O₃), as a wide-bandgap semiconductor material, is highly expected to find extensive applications in optoelectronic devices, high-power electronics, gas sensors, etc. However, the photoelectric properties of Ga₂O₃ still need to be improved before its devices become commercially viable. As is well known, doping is an effective method to modulate the various properties of semiconductor materials. In this study, Zn–N co-doped Ga₂O₃ films with various doping concentrations were grown in situ on sapphire substrates by atomic layer deposition (ALD) at 250 °C, followed by post-annealing at 900 °C. The post-annealed undoped Ga₂O₃ film showed a highly preferential orientation, whereas with the increase in Zn doping concentration, the preferential orientation of Ga₂O₃ films was deteriorated, turning it into an amorphous state. The surface roughness of the Ga₂O₃ thin films is largely affected by doping. As a result of post-annealing, the bandgaps of the Ga₂O₃ films can be modulated from 4.69 eV to 5.41 eV by controlling the Zn–N co-doping concentrations. When deposited under optimum conditions, high-quality Zn–N co-doped Ga₂O₃ films showed higher transmittance, a larger bandgap, and fewer defects compared with undoped ones. Full article

Catalytic methane decomposition offers an attractive and sustainable pathway for producing CO_x-free hydrogen and valuable carbon nanotubes. This work investigates the innovative use of liquid metals, particularly gallium and indium, as promoters for iron catalysts based on a titanium dioxide and alumina composite to improve this process even more. In a fixed-bed reactor operating at 800 °C and atmospheric pressure, all catalyst activities for methane decomposition were thoroughly assessed while keeping the gas hourly space velocity at 6 L/g h. Surface area and porosity, H₂-temperature programmed reduction/oxidation, X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and thermogravimetry analysis were utilized to investigate the physicochemical properties of the catalyst. The result showed that iron supported on a titanium-alumina catalyst exhibited higher activity, stability, and reproducibility with a methane conversion of 90% and hydrogen production of 81% after three cycles, with 240 min for each cycle and stability for 480 min. In contrast, the liquid metal-promoted catalysts improved the metal-support interaction and textural properties, such as surface area, pore volume, and particle dispersion of the catalysts. Still, the catalytic efficiency significantly improved. However, the gallium-promoted catalyst displayed excellent reusability. The characterization of the spent catalyst proved that both the iron supported on a titanium-alumina and its gallium-promoted derivative produced graphitic carbon; on the contrary, the indium-promoted catalyst produced amorphous carbon. These results demonstrate how liquid metal promoters can be used to adjust the characteristics of catalysts, providing opportunities for improved reusability and regulated production of carbon byproducts during methane decomposition. Full article

The potential of dry reforming methane (DRM) to convert two greenhouse gases concurrently is drawing interest from around the world. This research focused on developing supported nickel catalysts for the DRM, utilizing stabilized zirconia (SZ31107), which contains 5% SiO₂, as the support material. To promote the catalysts with a 5 wt.% Ni concentration, we used varying gallium loadings, specifically 0.1, 0.25, 0.5, 0.75, and 1 wt.%. After a detailed analysis, characterization was performed using X-ray diffraction, N₂-physorption, temperature-programmed reduction/desorption techniques, thermogravimetry, and Raman spectroscopy. The optimal DRM performance, achieved at 700 °C with a 1:1 CH₄:CO₂ feed, was recorded for the catalyst that has 0.25 wt.% Ga. The catalyst demonstrated remarkable average conversion rates of 56% for CH₄ and 66% for CO₂ after 300 min at 700 °C, with an H₂:CO ratio of 0.84. Activity was further enhanced by raising the temperature to 800 °C, which resulted in an 87% CO₂ conversion and an 80% CH₄ conversion. Studies on the catalyst’s long-term stability revealed a slow deactivation. With computed activation energies of 28,009 J/mol for CH₄ conversion and 21,875 J/mol for CO₂ conversion, temperature-programmed reaction tests conducted over the best catalyst demonstrated the DRM reaction’s endothermic character. Small additions of Ga encouraged the creation of more graphitic carbon structures, according to Raman spectroscopy of spent catalysts; the ideal catalyst had the lowest I_D/I_G ratio. These results suggest that the 5Ni+0.25Ga/SZ31107 catalyst is a promising candidate for large-scale syngas and hydrogen production. Full article

Gallium-68 (⁶⁸Ga) radiopharmaceuticals are increasingly used in nuclear medicine due to their rapid production capabilities and exceptional specificity in molecular imaging applications. Several of these tracers have demonstrated remarkable clinical efficacy across various oncological conditions, including prostate cancer, neuro-endocrine tumours, and cancers expressing fibroblast activation protein. Commercial kits allow the use of the standardised production protocol, but extemporaneous preparations are the economic and flexible alternatives, particularly within hospital-based radiopharmacy settings. However, such preparations need meticulous conformity to quality control measures and regulation to ensure safety and effectiveness. This review provides an analysis of current methodologies employed in ⁶⁸Ga extemporaneous preparations and examines pertinent regulatory frameworks. Further clinical validation trials and technical advancement remain essential to facilitate the routine clinical practice’s widespread usage and long-term feasibility of such preparations. Full article