Search Results (1,745)

The development of high-performance solid electrolytes is critical to advancing solid-state lithium-ion batteries (SSBs), with lithium lanthanum zirconium oxide (LLZO) emerging as a leading candidate due to its chemical stability and wide electrochemical window. In this study, we systematically investigated the effects of cation dopants, including aluminum (Al³⁺), tantalum (Ta⁵⁺), gallium (Ga³⁺), and rubidium (Rb⁺), on the structural, electronic, and ionic transport properties of LLZO using density functional theory (DFT) and ab initio molecular dynamics (AIMD) simulations. It appeared that, among all simulated results, Al-LLZO exhibits the highest ionic conductivity of 1.439 × 10⁻² S/cm with reduced activation energy of 0.138 eV, driven by enhanced lithium vacancy concentrations and preserved cubic-phase stability. Ta-LLZO follows, with a conductivity of 7.12 × 10⁻³ S/cm, while Ga-LLZO and Rb-LLZO provide moderate conductivity of 3.73 × 10⁻³ S/cm and 3.32 × 10⁻³ S/cm, respectively. Charge density analysis reveals that Al and Ta dopants facilitate smoother lithium-ion migration by minimizing electrostatic barriers. Furthermore, Al-LLZO demonstrates low electronic conductivity (1.72 × 10⁻⁸ S/cm) and favorable binding energy, mitigating dendrite formation risks. Comparative evaluations of radial distribution functions (RDFs) and XRD patterns confirm the structural integrity of doped systems. Overall, Al emerges as the most effective and economically viable dopant, optimizing LLZO for scalable, durable, and high-conductivity solid-state batteries. Full article

With the rapid increase in global lithium demand, the exploration of newly discovered lithium in the bauxite of the Wenshan area in southeastern Yunnan has become increasingly important. However, the current research on clay-type lithium in the Wenshan area has primarily focused on local exploration, and large-scale predictive metallogenic studies remain limited. To address this, this study utilized multi-source remote sensing data from ZY1-02D and ASTER, combined with ALOS 12.5 m DEM and Sentinel-2 imagery, to carry out remote sensing mineral identification, structural interpretation, and prospectivity mapping for clay-type lithium in the Wenshan area. This study indicates that clay-type lithium in the Wenshan area is controlled by NW, EW, and NE linear structures and are mainly distributed in the region from north of the Wenshan–Malipo fault to south of the Guangnan–Funing fault. High-value areas of iron-rich silicates and iron–magnesium minerals revealed by ASTER data indicate lithium enrichment, while montmorillonite and cookeite identification by ZY1-02D have strong indicative significance for lithium. Field verification samples show the highest Li₂O content reaching 11,150 μg/g, with six samples meeting the comprehensive utilization criteria for lithium in bauxite (Li₂O ≥ 500 μg/g) and also showing an enrichment of rare earth elements (REEs) and gallium (Ga). By integrating stratigraphic, structural, mineral identification, geochemical characteristics, and field verification data, ten mineral exploration target areas were delineated. This study validates the effectiveness of remote sensing technology in the exploration of clay-type lithium and provides an applicable workflow for similar environments worldwide. Full article

In this paper, the accuracy of basic and advanced spiral inductor models for gallium nitride (GaN) integrated inductors is evaluated. Specifically, the experimental measurements of geometrically scaled circular spiral inductors, fabricated in a radio frequency (RF) GaN-on silicon technology, are exploited to estimate the errors of two lumped geometrically scalable models, i.e., a simple π-model with seven components and an advanced model with thirteen components. The comparison is performed by using either the standard performance parameters, such as inductance (L), quality factor (Q-factor), and self-resonance frequency (SRF), or the two-port scattering parameters (S-parameters). The comparison reveals that despite a higher complexity, the developed advanced model achieves a significant reduction in SRF percentage errors in a wide range of geometrical parameters, while enabling an accurate estimation of two-port S-parameters. Indeed, the correct evaluation of both SRF and two-port S-parameters is crucial to exploit the model in an actual circuit design environment by properly setting the inductor geometrical parameters to optimize RF performance. Full article

Efficient detection of toxic and flammable vapors remains a major technological challenge, especially for environmental and industrial applications. This paper reports on the fabrication technology and gas-sensing properties of nanostructured Ga₂O₃/GaS_0.98Se_0.02. The β-Ga₂O₃ nanowires/nanoribbons with inclusions of Ga₂S₃ and Ga₂Se₃ microcrystallites were obtained by thermal treatment of GaS_0.98Se_0.02 slabs in air enriched with water vapors. The microstructure, crystalline quality, and elemental composition of the obtained samples were investigated using electron microscopy, X-ray diffraction, and Raman spectroscopy. The obtained structures show promising results as active elements in gas sensor applications. Vapors of methanol (CH₃OH), ethanol (C₂H₅OH), and acetone (CH₃-CO-CH₃) were successfully detected using the nanostructured samples. The electrical signal for gas detection was enhanced under UV light irradiation. The saturation time of the sensor depends on the intensity of the UV radiation beam. Full article

High-alumina fly ash may potentially be a valuable source of Ga with a concentration of Ga at 80 mg/kg. Direct adsorption and enrichment of Ga from sulfuric acid leach liquor of high-alumina fly ash is developed in this study. The H-type chelating resin with two carboxy groups exhibited the best adsorption capacity for Ga. The maximum adsorption capacity for Ga was 55 mg/g resin with an adsorption time of 24 h, an initial Ga concentration of 500 mg/L, an adsorption temperature of 55 °C, and an initial acid concentration of 0.1 mol/L. The adsorption process of Ga was in good fit with the Langmuir isotherm and pseudo-second-order reaction kinetics model. The chemical adsorption rate was controlled by an internal diffusion mechanism. The resin had a high selectivity for Ga³⁺ with a K_d over 3600 compared with Fe²⁺, Al³⁺, K⁺, Ca²⁺, and Mg²⁺. The adsorption mechanism was found to be the ion exchange reaction between Ga and H of carboxy and hydroxyl groups. The concentration of Ga in sulfuric acid leach liquor from high-alumina fly ash achieved enrichment from 200 mg/L to 2 g/L. It is an attractive medium for large-scale Ga extraction from high-alumina fly ash. Full article

Vertical GaN P-i-N diodes exhibit excellent high-voltage performance, fast switching speed, and low conduction losses, making them highly attractive for power applications. However, their breakdown voltage is severely constrained by electric field crowding at device edges. Using silvaco tcad (2019) tools, this work systematically evaluates multiple edge termination techniques, including deep-etched mesa, beveled mesa, and field-plate configurations with both vertical and inclined mesa structures. We present an optimized multi-drift-layer GaN P-i-N diode incorporating field-plate termination and analyze its electrical performance in detail. This study covers forward conduction characteristics including on-state voltage, on-resistance, and their temperature dependence, reverse breakdown behavior examining voltage capability and electric field distribution under different temperatures, and switching performance addressing both forward recovery phenomena, i.e., voltage overshoot and carrier injection dynamics, and reverse recovery characteristics including peak current and recovery time. The comprehensive analysis offers practical design guidelines for developing high-performance GaN power devices. Full article

Gallium nitride (GaN) enhancement-mode high-electron-mobility transistors ( E-HEMTs) deliver superior performance compared to traditional silicon (Si) and silicon carbide (SiC) counterparts. Their faster switching speeds, lower on-state resistances, and higher operating frequencies enable more efficient and compact power converters. However, their integration into high-power applications is limited by critical reliability concerns, particularly regarding their short-circuit (SC) withstand capability and overvoltage (OV) resilience. GaN devices typically exhibit SC withstand times of only a few hundred nanoseconds, needing ultrafast protection circuits, which conventional desaturation (DESAT) methods cannot adequately provide. Furthermore, their high switching transients increase the risk of false activation events. The lack of avalanche capability and the dynamic nature of GaN breakdown voltage exacerbate issues related to OV stress during fault conditions. Although SC-related behaviour in GaN devices has been previously studied, a focused and comprehensive review of protection strategies tailored to GaN technology remains lacking. This paper fills that gap by providing an in-depth analysis of SC and OV failure phenomena, coupled with a critical evaluation of current and next-generation protection schemes suitable for GaN-based high-power converters. Full article

Gallium nitride high-electron-mobility transistors (GaN HEMTs) are critical for high-power applications like AI power supplies and robotics but face reliability challenges due to increased dynamic ON-resistance (R_{DS_ON}) from electrical and thermomechanical stresses. This paper presents a novel self-calibrating temperature-sensitive electrical parameter (TSEP) model that uses gate leakage current (I_G) to estimate junction temperature with high accuracy, uniquely addressing aging effects overlooked in prior studies. By integrating I_G, aging-induced degradation, and failure-in-time (FIT) models, the approach achieves a junction temperature estimation error of less than 1%. Long-term hard-switching tests confirm its effectiveness, with calibrated R_{DS_ON} measurements enabling precise remaining useful life (RUL) predictions. This methodology significantly improves GaN HEMT reliability assessment, enhancing their performance in resilient power electronics systems. Full article

This paper focuses on the triple-junction gallium arsenide solar array of a MEO (Medium Earth Orbit) satellite that has been in orbit for 7 years. Through a combination of theoretical and data-driven methods, it conducts research on anti-radiation design verification and life prediction. This study integrates the Long Short-Term Memory (LSTM) algorithm into the full life cycle management of MEO satellite solar arrays, providing a solution that combines theory and engineering for the design of high-reliability energy systems. Based on semiconductor physics theory, this paper establishes an output current calculation model. By combining radiation attenuation factors obtained from ground experiments, it derives the theoretical current values for the initial orbit insertion and the end of life. Aiming at the limitations of traditional physical models in addressing solar performance degradation under complex radiation environments, this paper introduces an LSTM algorithm to deeply mine the high-density current telemetry data (approximately 30 min per point) accumulated over 7 years in orbit. By comparing the prediction accuracy of LSTM with traditional models such as Recurrent Neural Network (RNN) and Feedforward Neural Network (FNN), the significant advantage of LSTM in capturing the long-term attenuation trend of solar arrays is verified. This study integrates deep learning technology into the full life cycle management of solar arrays, constructs a closed-loop verification system of “theoretical modeling–data-driven intelligent prediction”, and provides a solution for the long-life and high-reliability operation of the energy system of MEO orbit satellites. Full article

As electric vehicles (EVs) continue to advance toward widespread adoption, innovations in power electronics are playing a pivotal role in improving efficiency, performance, and sustainability. This review presents recent progress in bidirectional converters and regenerative braking systems (RBSs), highlighting their contributions to energy recovery, battery longevity, and vehicle-to-grid integration. Bidirectional converters support two-way energy flow, enabling efficient regenerative braking and advanced charging capabilities. The integration of wide-bandgap semiconductors, such as silicon carbide and gallium nitride, further enhances power density and thermal performance. The paper evaluates various converter topologies, including single-stage and multi-stage architectures, and assesses their suitability for high-voltage EV platforms. Intelligent control strategies, including fuzzy logic, neural networks, and sliding mode control, are discussed for optimizing braking force and maximizing energy recuperation. In addition, the paper explores the influence of regenerative braking on battery degradation and presents hybrid energy storage systems and AI-based methods as mitigation strategies. Special emphasis is placed on the integration of RBSs in advanced electric vehicle platforms, including autonomous systems. The review concludes by identifying current challenges, emerging trends, and key design considerations to inform future research and practical implementation in electric vehicle energy systems. Full article

In this study, we introduce a high-resolution, high-speed thermal imaging technique using Raman spectroscopy to simultaneously measure the temperature of a substrate and a channel. By modifying the Raman spectrometer, we achieved a measurement speed faster than commercial spectrometers. This system demonstrated a sub-micron spatial resolution and the ability to measure the temperatures of the Si substrate and GaN channel simultaneously. During high-current operation, we observed significant self-heating in the GaN channel, with hotspots 100 °C higher than the surroundings, while the Si substrate showed an even temperature distribution. The ability to detect hotspots can help secure the reliability of devices through early failure analysis and can also be used for improvement research to reduce hotspots. These findings highlight the potential of this technique for early defect inspection and device improvement research. This study provides a novel and effective method for measuring the sub-micron resolution temperature distribution in devices, which can be applied to various semiconductor devices, including SiC-based power devices. Full article

The increasing need for high-data-rate wireless applications in 5G and IoT networks requires sophisticated power amplifier (PA) designs in the sub-6 GHz spectrum. This work introduces a high-efficiency Gallium Nitride (GaN)-based power amplifier optimized for the 2.3–2.5 GHz frequency band, using digital pre-distortion (DPD) to improve spectral fidelity and reduce distortion. The design employs load modulation and dynamic biasing to optimize power-added efficiency (PAE) and linearity. Simulation findings indicate a gain of 13 dB, a 3 dB compression point at 29.7 dBm input power, and 40 dBm output power, with a power-added efficiency of 60% and a drain efficiency of 65%. The power amplifier achieves a return loss of more than 15 dB throughout the frequency spectrum, ensuring robust impedance matching and consistent performance. Electromagnetic co-simulations confirm its stability under high-frequency settings, rendering it appropriate for next-generation high-efficiency wireless communication systems. Full article

A series of glasses (0.48SiO₂ − [0.40-x]ZnO − 0.12CaO-xGa₂O₃, x = 0, 0.8, 0.16) was developed to formulate a series of Ga-containing glass polyalkenoate cements (GPCs). The solubility of GPCs was tested using DI water, and it was found that the sample containing the highest mol% of Ga, LGa-2, had the most Ga ion release. The GPCs were incubated in SBF, and SEM/EDS analysis revealed that the at% of P increased, while the at% of Si decreased, highlighting the CaP precipitation on the GPC surface. The at% of Ga also decreased, reinforcing the Ga release from the GPC. Cellular testing against fibroblasts and osteoblasts showed that a concentration of 25 mg/mL of the liquid extracts from the LGa-2 GPC had increased cell viability compared to other concentrations and GPCs tested. Antibacterial studies against E. coli and S. epidermidis demonstrated inhibition zones around the GPCs, highlighting their effectiveness in the elimination of bacteria on contact. Full article

Objectives: This review examines the efficacy of each laser type in the field of periodontal surgery and analyzes published articles that focus on the use of lasers in periodontal surgery. Methods: Automatic and manual searches were made in 3 separate databases (PubMed, Embase, and Cochrane) with the aim of finding all published articles of the last 15 years up until December 2023 that describe the clinical manipulation of diode, erbium:yttrium-aluminum-garnet (Er:YAG), erbium, chromium: yttrium-scandium-gallium-garnet (Er,Cr:YSGG), neodymium yttrium-aluminum-garnet (Nd:YAG), and carbon dioxide (CO₂) lasers for periodontal surgical procedures in humans. Results: A total of 18 studies were selected for inclusion, all of which compared the usage of a laser type to conventional periodontal surgical techniques with their main follow-ups being in 3, 6, or 9 months. Conclusions: There are a variety of laser types, each with different settings and wavelengths, that can be applied to the established aspects of resective and regenerative periodontal surgeries. A significant majority of the publications, 10 of the 12 studies, that include diode lasers as an adjunctive show an improvement in clinical results compared to traditional surgical techniques alone, while 2 articles studied the Er:YAG laser and 1 article studied the Er,Cr:YSGG laser, with all 3 of them failing to completely test their therapeutic capabilities and indicating similar results to conventional surgery. The Nd:YAG laser was featured in 3 studies, with 1 study showing superior results for the laser group, another study showing the negative influence of the laser, and the 3rd study being inconclusive. The CO₂ laser was used in 1 study and showed better clinical results for the laser group. Diode lasers have been proven to produce additional therapeutic results, but there is a need for further investigation of erbium family lasers along with the Nd:YAG and CO₂ lasers, as the current provided literature contradicts their potential healing capabilities. Full article

The initial surface reaction of gallium nitride (GaN) grown by atomic layer deposition (GaN-ALD) was investigated using density functional theory (DFT) calculations. Trimethylgallium (TMG) and ammonia (NH₃) were used as gallium (Ga) and nitrogen (N) precursors, respectively. DFT calculations at the B3LYP/6-311+G(2d,p) and 6-31G(d) levels were performed to compute relative energies and optimize chemical structures, respectively. TMG adsorption on Si₁₅H₁₈–(NH₂)₂ and Si₁₅H₂₀=(NH)₂ clusters was modeled, where –NH₂ and =NH surface species served as adsorption sites. The reaction mechanisms in the adsorption and nitridation steps were investigated. The results showed that TMG can adsorb on both surface adsorption sites. In the initial adsorption stage, TMG adsorbs onto =NH- and –NH₂-terminated Si(100) surfaces with activation energies of 1.11 and 2.00 eV, respectively, indicating that the =NH site is more reactive. During subsequent NH3 adsorption, NH₃ adsorbs onto the residual TMG on the =NH- and –NH₂-terminated surfaces with activation energies of approximately 2.00 ± 0.02 eV. The reaction pathways indicate that NH₃ adsorbs via similar mechanisms on both surfaces, resulting in comparable nitridation kinetics. Furthermore, this study suggests that highly reactive NH₂⁻ species generated in the gas phase from ionized NH₃ may help reduce the process temperature in the GaN-ALD process. Full article