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Photonics
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Frontier of Quantum Devices for Quantum Technologies
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Frontier of Quantum Devices for Quantum Technologies

A special issue of Photonics (ISSN 2304-6732).

Deadline for manuscript submissions: closed (15 March 2023) | Viewed by 16332

Special Issue Editors

Prof. Dr. Quanyong Lu

E-Mail Website
Guest Editor
Beijing Academy of Quantum Information Sciences, Beijing 100193, China
Interests: quantum photonic devices; nonlinear optics; terahertz lasers; frequency combs; electroabsorption-modulated lasers; single photon sources
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Qijie Wang

E-Mail Website
Guest Editor
Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering & The Photonics Institute, Nanyang Technological University, Singapore 639798, Singapore
Interests: mid- and far-infrared lasers; 2D-material-based mid-IR and THz optoelectronic devices; infrared plasmonic and metamaterial devices
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Fengqi Liu

E-Mail Website
Guest Editor
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Interests: semiconductor low-dimentional materials; optoelectronic devices

Special Issue Information

Dear Colleagues,

Quantum science and technology are enabling a new frontier in computing, communication, and sensing, leading to the next era of technology revolution. As the building block for quantum technology, quantum devices such as lasers, detectors, modulators, single photon sources, etc. are seeing tremendous development.

Various new functionalities have been achieved, including single-frequency emission with wide electrical tuning or array tuning, high-brightness single-photon generation and detection, phase-locked multimode frequency combs, short pulse generation, high-speed modulated lasers, thermal electrically cooled THz cascade lasers, topological cavity, and so on. These fast-developing technologies are pushing quantum devices including quantum cascade lasers, superlattice detectors, and single-photon sources as ideal building blocks for future quantum sensing, communication, and imaging. This Special Issue aims to present the latest theory and design and state-of-the-art developments for quantum devices and their applications. Researchers are invited to submit their contributions to this Special Issue. Topics include but are not limited to:

  • New breakthroughs in quantum devices;
  • Theories and designs of quantum devices;
  • Nonlinear optical effects in quantum devices;
  • Single-photon generation and detection;
  • Power scaling of lasers;
  • Frequency combs;
  • Integrated photonic circuits;
  • Short-pulse generation;
  • High-speed modulated lasers;
  • Topological engineered quantum devices;
  • Novel-material-based quantum devices;
  • On-chip quantum sensing applications;
  • Quantum communication applications.

Prof. Dr. Quanyong Lu
Prof. Dr. Qijie Wang
Prof. Dr. Fengqi Liu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

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Further information on MDPI's Special Issue polices can be found here.

Published Papers (4 papers)

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Research

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9 pages, 4615 KiB  
Communication
3 W Continuous-Wave Room Temperature Quantum Cascade Laser Grown by Metal-Organic Chemical Vapor Deposition
by Teng Fei, Shenqiang Zhai, Jinchuan Zhang, Quanyong Lu, Ning Zhuo, Junqi Liu, Lijun Wang, Shuman Liu, Zhiwei Jia, Kun Li, Yongqiang Sun, Kai Guo and Fengqi Liu
Photonics 2023, 10(1), 47; https://doi.org/10.3390/photonics10010047 - 3 Jan 2023
Cited by 10 | Viewed by 3810
Abstract
In this article, we report a high-performance λ ~ 4.6 μm quantum cascade laser grown by metal-organic chemical vapor deposition. Continuous wave power of 3 W was obtained from an 8 mm-long and 7.5 μm wide coated laser at 285 K. The maximum [...] Read more.
In this article, we report a high-performance λ ~ 4.6 μm quantum cascade laser grown by metal-organic chemical vapor deposition. Continuous wave power of 3 W was obtained from an 8 mm-long and 7.5 μm wide coated laser at 285 K. The maximum pulsed and CW wall-plug efficiency reached 15.4% and 10.4%, respectively. The device performance shows the great potential of metal-organic chemical vapor deposition growth for quantum cascade material and devices. Full article
(This article belongs to the Special Issue Frontier of Quantum Devices for Quantum Technologies)
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10 pages, 2435 KiB  
Article
Theoretical Study of Quasi One-Well Terahertz Quantum Cascade Laser
by Boyu Wen and Dayan Ban
Photonics 2022, 9(4), 247; https://doi.org/10.3390/photonics9040247 - 9 Apr 2022
Cited by 2 | Viewed by 2546
Abstract
Developing a high-temperature terahertz (THz) quantum cascade laser (QCL) has been one of the major challenges in the THz QCL field over recent decades. The maximum lasing temperature of THz QCLs has gradually been increased, arguably by shortening the length of repeating periods [...] Read more.
Developing a high-temperature terahertz (THz) quantum cascade laser (QCL) has been one of the major challenges in the THz QCL field over recent decades. The maximum lasing temperature of THz QCLs has gradually been increased, arguably by shortening the length of repeating periods of the quantum structure in the device’s active region from 7 wells/14 layers to 2 wells/4 layers per period. The current highest operating temperature of 250 K was achieved in a two-well direct-phonon design. In this paper, we propose a potential and promising novel quantum design scheme named the quasi one-well (Q1W) design, in which each quantum cascade period consists of only three semiconductor layers. This design is the narrowest of all existing THz QCL structures to date. We explore a series of the Q1W designs using the non-equilibrium green function (NEGF) and rate-equation (RE) models. Both models show that the Q1W designs exhibit the potential to achieve sufficient optical gain with low-temperature sensitivity. Our simulation results suggest that this novel Q1W scheme may potentially lead to relatively less temperature-sensitive THz QCLs. The thickness of the Q1W scheme is less than 20 nm per period, which is the narrowest of the reported THz QCL schemes. Full article
(This article belongs to the Special Issue Frontier of Quantum Devices for Quantum Technologies)
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6 pages, 1466 KiB  
Communication
High Power Mid-Infrared Quantum Cascade Lasers Grown on GaAs
by Steven Slivken and Manijeh Razeghi
Photonics 2022, 9(4), 231; https://doi.org/10.3390/photonics9040231 - 1 Apr 2022
Cited by 13 | Viewed by 3851
Abstract
The motivation behind this work is to show that InP-based intersubband lasers with high power can be realized on substrates with significant lattice mismatch. This is a primary concern for the integration of mid-infrared active optoelectronic devices on low-cost photonic platforms, such as [...] Read more.
The motivation behind this work is to show that InP-based intersubband lasers with high power can be realized on substrates with significant lattice mismatch. This is a primary concern for the integration of mid-infrared active optoelectronic devices on low-cost photonic platforms, such as Si. As evidence, an InP-based mid-infrared quantum cascade laser structure was grown on a GaAs substrate, which has a large (4%) lattice mismatch with respect to InP. Prior to laser core growth, a metamorphic buffer layer of InP was grown directly on a GaAs substrate to adjust the lattice constant. Wafer characterization data are given to establish general material characteristics. A simple fabrication procedure leads to lasers with high peak power (>14 W) at room temperature. These results are extremely promising for direct quantum cascade laser growth on Si substrates. Full article
(This article belongs to the Special Issue Frontier of Quantum Devices for Quantum Technologies)
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Review

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21 pages, 2951 KiB  
Review
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
by Rusong Li, Fengqi Liu and Quanyong Lu
Photonics 2023, 10(6), 639; https://doi.org/10.3390/photonics10060639 - 1 Jun 2023
Cited by 7 | Viewed by 4712
Abstract
Quantum light sources that generate single photons and entangled photons have important applications in the fields of secure quantum communication and linear optical quantum computing. Self-assembled semiconductor quantum dots, also known as “artificial atoms”, have discrete energy-level structures due to electronic confinement in [...] Read more.
Quantum light sources that generate single photons and entangled photons have important applications in the fields of secure quantum communication and linear optical quantum computing. Self-assembled semiconductor quantum dots, also known as “artificial atoms”, have discrete energy-level structures due to electronic confinement in all three spatial dimensions. It has the advantages of high stability, high brightness, deterministic, and tunable emission wavelength, and is easy to integrate into an optical microcavity with a high-quality factor, which can realize a high-performance quantum light source. In this paper, we first introduce the generation principles, properties, and applications of single-photon sources in the field of quantum information and then present implementations and development of quantum light sources in self-assembled semiconductor quantum dot materials. Finally, we conclude with an outlook on the future development of semiconductor quantum dot quantum light sources. Full article
(This article belongs to the Special Issue Frontier of Quantum Devices for Quantum Technologies)
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