Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
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Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
2
School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
3
Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China
4
University of Chinese Academy of Sciences, Beijing 100049, China
5
Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China
*
Authors to whom correspondence should be addressed.
Academic Editors: Ziyang Zhang and Christophe Petit
Nanomaterials 2022, 12(3), 478; https://doi.org/10.3390/nano12030478
Received: 7 January 2022
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Revised: 18 January 2022
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Accepted: 24 January 2022
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Published: 29 January 2022
(This article belongs to the Special Issue Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots)
Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and nucleation growth were observed after miscut-induced atomic steps disappeared. The morphology of nucleation growth at different temperature is explained by a multi-nucleation regime introducing critical supersaturation. Simulated results based on a step motion model successfully explain the growth behaviors on stripes. These findings can be applied to control the surface kinetics of devices such as laser diodes grown on patterned substrate.
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Keywords:
step motions; spiral growth; island growth; patterned substrate
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MDPI and ACS Style
Wu, P.; Liu, J.; Jiang, L.; Hu, L.; Ren, X.; Tian, A.; Zhou, W.; Ikeda, M.; Yang, H. Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate. Nanomaterials 2022, 12, 478. https://doi.org/10.3390/nano12030478
AMA Style
Wu P, Liu J, Jiang L, Hu L, Ren X, Tian A, Zhou W, Ikeda M, Yang H. Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate. Nanomaterials. 2022; 12(3):478. https://doi.org/10.3390/nano12030478
Chicago/Turabian StyleWu, Peng, Jianping Liu, Lingrong Jiang, Lei Hu, Xiaoyu Ren, Aiqin Tian, Wei Zhou, Masao Ikeda, and Hui Yang. 2022. "Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate" Nanomaterials 12, no. 3: 478. https://doi.org/10.3390/nano12030478
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