Graphene and Other 2D Materials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: closed (10 June 2026) | Viewed by 1217

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Guest Editor
College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
Interests: 2D materials; electronic devices; electrochemical devices; memory; strain sensors
Special Issues, Collections and Topics in MDPI journals
College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
Interests: strain engineering; new semiconductor optoelectronic devices; new semiconductor quantum devices; flexible electronics/optoelectronic devices; new principle devices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Two-dimensional materials, such as graphene, exhibit unique physical and chemical properties due to their ultra-thin thicknesses, and show great potential in applications such as sensors, memories, catalysts, photodetectors and so on. A significant amount of research has been dedicated to the study of graphene and other 2D materials with related practical applications.

We are pleased to invite you to submit studies regarding the preparation, characterization and application of graphene and other 2D materials. This Special Issue aims to encourage scientists to publish their research and reviews on graphene and other 2D materials, focusing on their preparation and related device applications such as strain sensor, memories and optoelectronic detector so on.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • Synthesis of graphene and other 2D materials
  • Device applications of graphene and other 2D materials

We look forward to receiving your contributions.

Dr. Jianling Meng
Dr. Cong Wang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-anonymized peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • two-dimensional materials
  • graphene
  • synthesis
  • electronic devices
  • photonic devices
  • electrochemical devices

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Published Papers (1 paper)

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Research

20 pages, 5408 KB  
Article
High-Temperature Electrical Transport Behavior of p-Doped Boron Diamond Film/n-WS2 Nanosheet Heterojunction
by Changxing Li, Dandan Sang, Yarong Shi, Shunhao Ge, Lena Du and Qinglin Wang
Nanomaterials 2025, 15(24), 1900; https://doi.org/10.3390/nano15241900 - 18 Dec 2025
Cited by 1 | Viewed by 730
Abstract
WS2 is a promising material for applications in wearable devices, field-effect transistors, and high-performance heterojunctions. However, significant challenges remain regarding effective regulation and temperature stability. This study investigates the temperature-dependent electrical properties of WS2 heterojunctions prepared by electrophoretic deposition on boron-doped [...] Read more.
WS2 is a promising material for applications in wearable devices, field-effect transistors, and high-performance heterojunctions. However, significant challenges remain regarding effective regulation and temperature stability. This study investigates the temperature-dependent electrical properties of WS2 heterojunctions prepared by electrophoretic deposition on boron-doped diamond films. The results reveal that the rectification ratio of lightly doped boron heterojunctions at room temperature is 9.1, indicating thermal excitation behavior at temperatures above 100 °C. In contrast, heavily doped boron heterojunctions maintain a rectification ratio consistently below 1 over a temperature range from room temperature to 180 °C, indicating reverse rectification. The lowest rectification ratio observed at 140 °C is 0.17. Density functional theory (DFT) calculations suggest that hydrogen (H) termination generates an internal electric field in the opposite direction, causing a reversal of the rectification polarity, while oxygen (O) termination favors forward rectification. Additionally, due to vacancy defects in WS2, the heterojunction exhibits negative differential resistance at 120 °C, with a peak-to-valley ratio of 2.4. Higher doping levels, in comparison to lower concentrations, offer a more stable rectification ratio at elevated temperatures, making the material more suitable for high-temperature, high-frequency, and high-power applications. Full article
(This article belongs to the Special Issue Graphene and Other 2D Materials)
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