Recent Progress in Electronic Phenomena in Two-Dimensional Materials

Dear Colleagues,

Two-dimensional (2D) materials have become a central focus of nanoscience, condensed matter research, and next-generation electronics due to their remarkable electronic properties arising from reduced dimensionality, tunable band structures, strong many-body interactions, pronounced sensitivity to defects, interfaces, dielectric environments, and external perturbations. Beyond graphene, a diverse class of layered systems, including transition metal dichalcogenides, black phosphorus, ultrathin films, Xenes, MXenes, and van der Waals heterostructures, offers remarkable opportunities to explore charge transport, quantum phenomena, interfacial effects, band engineering, and functional device operation. Progress in this field depends not only on advances in fundamental understanding but also on the development of reliable synthesis and materials preparation approaches that enable precise control of electronic properties through the manipulation of thickness, crystallinity, composition, defects, contacts, and interfaces while improving reproducibility and scalability.

This Special Issue of Nanomaterials aims to bring together high-quality original research articles and review papers on electronic processes, interface phenomena, and functional devices based on two-dimensional materials and related heterostructures. We welcome contributions covering both fundamental studies and emerging directions, including experimental, theoretical, and computational investigations and emerging device-oriented directions. Particular emphasis is placed on synthesis and fabrication methods, such as chemical and physical vapor deposition, molecular beam epitaxy, solution-based synthesis, mechanical and liquid-phase exfoliation, and scalable processing, as well as doping, defect engineering, and heterostructure assembly, especially where these approaches enable deeper insight into transport, switching behavior, and device performance.

We encourage submissions that elucidate the relationships between growth conditions, structural properties and electronic/spintronic performance, employing advanced characterization techniques. Studies exploring electronic structure, charge transport, contact physics, disorder, switching mechanisms, device engineering and the role of interfaces in determining variability, reliability and functionality are especially welcome. By providing a platform for interdisciplinary exchange among researchers in physics, chemistry, materials science and engineering, this Special Issue seeks to advance the fundamental understanding of electronic processes in two-dimensional materials and to stimulate innovation in synthesis, characterization and theoretical approaches that will shape future developments and advances in electronic device engineering.

Topics of interest include, but are not limited to, the following:

• Synthesis, growth and scalable fabrication of 2D materials;
• Materials preparation, processing and transfer techniques;
• Defect engineering, doping strategies and disorder effects;
• Electronic structure, band engineering and strain tuning;
• Charge transport and carrier dynamics;
• Interface physics, contacts and heterointerfaces;
• Advanced experimental characterization of electronic properties;
• First-principles calculations, modeling and simulation;
• Structure–property relationships in 2D systems;
• Magnetic and spintronic properties;
• Electron–phonon interactions and scattering mechanisms;
• Many-body effects, correlations and excitonic phenomena;
• Moiré superlattices and van der Waals heterostructures;
• Quantum transport and low-dimensional electronic phenomena;
• Topological and emergent electronic states;
• Contact engineering and contact resistance in 2D devices;
• Dielectric integration and gate-stack engineering;
• Electronic variability, operational stability and reliability;
• Resistive switching, memristive and non-volatile memory devices;
• Neuromorphic, in-memory and in-sensor computing concepts based on 2D materials;
• 2D chalcogenides and hybrid chalcogenide-based electronic systems.

Dr. Bogdana Borca
Dr. Alin Velea
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

• two-dimensional materials
• transition metal dichalcogenides
• ultrathin films
• electronic properties
• charge transport
• electronic structure
• van der Waals heterostructures
• synthesis and growth
• transfer methods
• defect engineering
• doping
• surfaces and interfaces
• contact resistance
• dielectric integration
• advanced characterization
• electronic devices
• non-volatile memory
• memristors
• neuromorphic devices
• device reliability