Magnetron Sputtering-Obtained Nanomaterials: From Synthesis to Electronic and Optoelectronic Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 31 October 2025 | Viewed by 1637

Special Issue Editors


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Guest Editor
National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
Interests: magnetron sputtering; thin-film deposition; combinatorial library synthesis; machine learning; 2D materials; nanomaterials and nanostructures; structural properties of amorphous materials; non-volatile memory devices; memristors; cellular automata modeling; chalcogenide glasses
Optical Processes in Nanostructured Materials, National Institute of Materials Physics, 077125 Bucharest, Romania
Interests: phase-change memories; chalcogenide glasses; 2D transition metal dichalcogenides; thin chalcogenide films.
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Special Issue Information

Dear Colleagues,

Magnetron sputtering has emerged as a powerful and versatile technique for the fabrication of nanomaterials and thin films with precisely controlled properties. This Special Issue aims to highlight cutting-edge research on functional magnetron sputtering-obtained nanomaterials and their applications in developing advanced electronic and optoelectronic devices.

This Special Issue includes the following topics:

  • Magnetron sputtering technique and process optimization;
  • Synthesis and characterization of nanomaterials and thin films by magnetron sputtering;
  • Structural, optical, and electronic properties of sputtered nanomaterials;
  • Applications of sputtered nanomaterials in electronic and optoelectronic devices, including but not limited to the below:
    • Memory devices (e.g. phase-change memory, resistive switching memory);
    • Sensors and detectors;
    • Energy harvesting and storage devices;
    • Spintronic and memristive devices;
    • Optoelectronic devices;
  • 2D materials obtained by magnetron sputtering;
  • Modeling and simulation of magnetron sputtering processes and resulting nanostructures, including cellular automata approaches;
  • Machine learning applications in material discovery and magnetron sputtering process optimization;
  • Combinatorial thin-film libraries for rapid material exploration.

We welcome original research articles, reviews, and perspective papers that advance the fundamental understanding and technological applications of magnetron sputtering for nanomaterials and devices. This Special Issue aims to bring together researchers from materials science, physics, chemistry, and engineering to foster interdisciplinary development in this rapidly evolving field.

Dr. Claudia Mihai
Dr. Alin Velea
Guest Editors

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Keywords

  • magnetron sputtering
  • thin films
  • nanomaterials
  • electronic devices
  • optoelectronic devices
  • memristors
  • sensors
  • 2D materials
  • machine learning
  • combinatorial synthesis
  • modeling and simulation

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Published Papers (1 paper)

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Research

12 pages, 10800 KiB  
Article
Transparent Zinc Oxide Memristor Structures: Magnetron Sputtering of Thin Films, Resistive Switching Investigation, and Crossbar Array Fabrication
by Alexander V. Saenko, Roman V. Tominov, Igor L. Jityaev, Zakhar E. Vakulov, Vadim I. Avilov, Nikita V. Polupanov and Vladimir A. Smirnov
Nanomaterials 2024, 14(23), 1901; https://doi.org/10.3390/nano14231901 - 27 Nov 2024
Cited by 1 | Viewed by 1317
Abstract
This paper presents the results of experimental studies of the influence of high-frequency magnetron sputtering power on the structural and electrophysical properties of nanocrystalline ZnO films. It is shown that at a magnetron sputtering power of 75 W in an argon atmosphere at [...] Read more.
This paper presents the results of experimental studies of the influence of high-frequency magnetron sputtering power on the structural and electrophysical properties of nanocrystalline ZnO films. It is shown that at a magnetron sputtering power of 75 W in an argon atmosphere at room temperature, ZnO films have a relatively smooth surface and a uniform nanocrystalline structure. Based on the results obtained, the formation and study of resistive switching of transparent ITO/ZnO/ITO memristor structures as well as a crossbar array based on them were performed. It is demonstrated that memristor structures based on ZnO films obtained at a magnetron sputtering power of 75 W exhibit stable resistive switching for 1000 cycles between high resistance states (HRS = 537.4 ± 26.7 Ω) and low resistance states (LRS = 291.4 ± 38.5 Ω), while the resistance ratio in HRS/LRS is ~1.8. On the basis of the experimental findings, we carried out mathematical modeling of the resistive switching of this structure, and it demonstrated that the regions with an increase in the electric field strength along the edge of the upper electrode become the main sources of oxygen vacancy generation in ZnO film. A crossbar array of 16 transparent ITO/ZnO/ITO memristor structures was also fabricated, demonstrating 20,000 resistive switching cycles between LRS = 13.8 ± 1.4 kΩ and HRS = 34.8 ± 2.6 kΩ for all devices, with a resistance ratio of HRS/LRS of ~2.5. The obtained results can be used in the development of technological processes for the manufacturing of transparent memristor crossbars for neuromorphic structures of machine vision, robotics, and artificial intelligence systems. Full article
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