Advanced Manufacturing and Interface Engineering for Perovskite Materials
A Special Issue of Molecules (ISSN 1420-3049) belonging to the section "Materials Chemistry".
Deadline for manuscript submissions: 31 January 2027 | Viewed by 705
Editor
Interests: quantum dots; nanoparticles; optoelectronics; thin film; semiconductors
Special Issue Information
Dear Colleagues,
Metal halide perovskite materials have emerged as a research hotspot in next-generation optoelectronic devices due to their outstanding photoelectric properties, such as high light absorption coefficient, long carrier diffusion length, tunable bandgap and relatively high defect tolerance. They exhibit tremendous application potential in solar cells, light-emitting diodes, photodetectors, lasers and other fields, offering advantages such as low cost, flexibility and low-temperature processability, indicating significant prospects for industrialization.
In the fabrication of perovskite materials, the optimization and innovation of manufacturing processes are central to achieving high performance and stability. This ranges from the chemical synthesis of quantum dots and surface ligand engineering to the development of both solution-based methods (such as spin-coating, blade coating, inkjet printing, slot-die coating, etc.) and vapor-phase methods (like co-evaporation, vapor-assisted deposition) for film preparation. It also includes the exploration of scalable manufacturing processes, from high-resolution patterning at the micro- and nanoscale to large-area, uniformity-controlled roll-to-roll production. Furthermore, crystallization control, additive engineering and dimensional engineering (e.g., 2D/3D and multidimensional perovskites) are also key research directions for improving film quality and device performance.
At the same time, interface engineering plays a decisive role in the efficiency and stability of perovskite optoelectronic devices. Through methods such as surface passivation, interface energy level alignment, the optimization of charge transport layers, the incorporation of 2D perovskite capping layers, and the introduction of organic/inorganic buffer layers, non-radiative recombination can be effectively suppressed, interface energy barriers can be reduced, charge extraction can be enhanced and the environmental stability and operational lifetime of devices can be significantly improved. Therefore, comprehensive and in-depth interface design and modulation, from material synthesis and thin-film fabrication to device integration, are indispensable for advancing perovskite optoelectronic technology from the laboratory toward commercial applications.
We cordially invite researchers to submit original research papers focusing on the above topics, to jointly promote progress in the manufacturing processes and interface engineering of perovskite materials and facilitate in-depth discussions and technological breakthroughs in this field.
Prof. Dr. Chaoyu Xiang
Guest Editor
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Keywords
- metal halide perovskite
- photovoltaics
- LED
- detectors and sensors
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