Silicon Photonics–CMOS Integration and Device Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E:Engineering and Technology".

Deadline for manuscript submissions: 30 September 2025 | Viewed by 2057

Special Issue Editor


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Guest Editor
Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul, Republic of Korea
Interests: CMOS analogue integrated circuit designs for the applications of high-speed optical interconnects; silicon photonics; LiDAR sensors
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Special Issue Information

Dear Colleagues,

Silicon photonics and photonic integrated circuits (PICs) using CMOS processes will take a key role in new emerging applications such as artificial intelligence (AI), light detection and ranging (LiDAR) sensors for autonomous vehicles and drones, next-generation nuromorphic computing systems, and quantum computing systems. Following the surprisingly fast increase in AI industry demands for high-performance transceivers to process data at speeds up to terabits per second, power-efficient high-speed optical interconnects have become more and more crucial for AI-driven world industries. Although CMOS PICs face various challenges including material limitations, complicated integration levels, initial cost issues, and long manufacturing times, a number of key players in semiconductor industries have paid a great deal of attention to these PICs to build high-speed transceivers for AI and data center applications. In this respect, silicon photonis and PICs using CMOS processes represent the leading technologoies in the imminent AI-driven market.

Hence, the goal of this Special Issue is to invite the submission of high-quality, state-of-the-art research articles that deal with challenging issues in silicon photonics and CMOS integration and device applications. We solicit original papers of unpublished and completed research that are not currently under review elsewhere.

Topics of interest include, but are not limited to, the following:

  • Silicon photonics;·       
  • CMOS photonic integrated circuits;      
  • High-performance transceivers for data centers, on-device optical interconnects, AI accelerators, neuromorphic computing, quantum computing, LiDAR sensors, etc. 

Prof. Dr. Sung Min Park
Guest Editor

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Keywords

  • silicon photonics
  • CMOS photonic integrated circuits
  • high-performance transceivers
  • on-device interconnects
  • AI accelerators
  • neuromorphic computing
  • quantum computing
  • LiDAR sensors

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Published Papers (2 papers)

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16 pages, 8936 KiB  
Article
A Low-Noise CMOS Transimpedance-Limiting Amplifier for Dynamic Range Extension
by Somi Park, Sunkyung Lee, Bobin Seo, Dukyoo Jung, Seonhan Choi and Sung-Min Park
Micromachines 2025, 16(2), 153; https://doi.org/10.3390/mi16020153 - 28 Jan 2025
Viewed by 706
Abstract
This paper presents a low-noise CMOS transimpedance-limiting amplifier (CTLA) for application in LiDAR sensor systems. The proposed CTLA employs a dual-feedback architecture that combines the passive and active feedback mechanisms simultaneously, thereby enabling automatic limiting operations for input photocurrents exceeding 100 µApp [...] Read more.
This paper presents a low-noise CMOS transimpedance-limiting amplifier (CTLA) for application in LiDAR sensor systems. The proposed CTLA employs a dual-feedback architecture that combines the passive and active feedback mechanisms simultaneously, thereby enabling automatic limiting operations for input photocurrents exceeding 100 µApp (up to 1.06 mApp) without introducing signal distortions. This design methodology can eliminate the need for a power-hungry multi-stage limiting amplifier, hence significantly improving the power efficiency of LiDAR sensors. The practical implementation for this purpose is to insert a simple NMOS switch between the on-chip avalanche photodiode (APD) and the active feedback amplifier, which then can provide automatic on/off switching in response to variations of the input currents. In particular, the feedback resistor in the active feedback path should be carefully optimized to guarantee the circuit’s robustness and stability. To validate its practicality, the proposed CTLA chips were fabricated in a 180 nm CMOS process, demonstrating a transimpedance gain of 88.8 dBΩ, a −3 dB bandwidth of 629 MHz, a noise current spectral density of 2.31 pA/√Hz, an input dynamic range of 56.6 dB, and a power dissipation of 23.6 mW from a single 1.8 V supply. The chip core was realized within a compact area of 180 × 50 µm2. The proposed CTLA shows a potential solution that is well-suited for power-efficient LiDAR sensor systems in real-world scenarios. Full article
(This article belongs to the Special Issue Silicon Photonics–CMOS Integration and Device Applications)
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19 pages, 5615 KiB  
Article
An Approach to Reduce Tuning Sensitivity in the PIC-Based Optoelectronic Oscillator by Controlling the Phase Shift in Its Feedback Loop
by Vladislav Ivanov, Ivan Stepanov, Grigory Voronkov, Ruslan Kutluyarov and Elizaveta Grakhova
Micromachines 2025, 16(1), 32; https://doi.org/10.3390/mi16010032 - 28 Dec 2024
Viewed by 971
Abstract
Radio photonic technologies have emerged as a promising solution for addressing microwave frequency synthesis challenges in current and future communication and sensing systems. One particularly effective approach is the optoelectronic oscillator (OEO), a simple and cost-effective electro-optical system. The OEO can generate microwave [...] Read more.
Radio photonic technologies have emerged as a promising solution for addressing microwave frequency synthesis challenges in current and future communication and sensing systems. One particularly effective approach is the optoelectronic oscillator (OEO), a simple and cost-effective electro-optical system. The OEO can generate microwave signals with low phase noise and high oscillation frequencies, often outperforming traditional electrical methods. However, a notable disadvantage of the OEO compared to conventional signal generation methods is its significant frequency tuning step. This paper presents a novel approach for continuously controlling the output frequency of an optoelectronic oscillator (OEO) based on integrated photonics. This is achieved by tuning an integrated optical delay line within a feedback loop. The analytical model developed in this study calculates the OEO’s output frequency while accounting for nonlinear errors, enabling the consideration of various control schemes. Specifically, this study examines delay lines based on the Mach–Zehnder interferometer and microring resonators, which can be controlled by either the thermo-optic or electro-optic effect. To evaluate the model, we conducted numerical simulations using Ansys Lumerical software. The OEO that utilized an MRR-based electro-optical delay line demonstrated a tuning sensitivity of 174.5 MHz/V. The calculated frequency tuning sensitivity was as low as 6.98 kHz when utilizing the precision digital-to-analog converter with a minimum output voltage step of 40 μV. The proposed approach to controlling the frequency of the OEO can be implemented using discrete optical components; however, this approach restricts the minimum frequency tuning sensitivity. It provides an additional degree of freedom for frequency tuning within the OEO’s operating range, which is ultimately limited by the amplitude-frequency characteristic of the notch filter. Thus, the proposed approach opens up new opportunities for increasing the accuracy and flexibility in generating microwave signals, which can be significant for various communications and radio engineering applications. Full article
(This article belongs to the Special Issue Silicon Photonics–CMOS Integration and Device Applications)
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