Advanced Oxide- and Carbon Nanotube-Based Transistors for Next-Generation Semiconductor Chips
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: 30 June 2026 | Viewed by 6
Special Issue Editors
Interests: micro-electronics; synaptic device; neuromorphic computing
Interests: organic electronics; sensors; SWCNTs; graphene; microelectronics
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Oxide semiconductor transistors and carbon nanotube (CNT)-based transistors offer promising pathways toward next-generation semiconductor chips, benefiting from their excellent electrical transport, compatibility with low-temperature processing, and suitability for micro/nanoscale integration. Despite rapid progress, major challenges—such as interface defect control, ultrathin dielectric reliability, operational and radiation stability, and scalable manufacturing—still hinder broader applications in advanced electronic, sensing, and neuromorphic systems. Further developments in materials engineering, thin-film growth, device physics, and micro/nanofabrication technologies are essential to advance these device platforms. This Special Issue welcomes innovative research articles and comprehensive reviews on oxide- and CNT-based transistors, covering materials, processing, device design, performance optimization, and system-level integration.
Dr. Yuxiao Fang
Dr. Mohammed Mabrook
Guest Editors
Manuscript Submission Information
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Keywords
- oxide transistors
- carbon nanotube transistors
- micro/nanofabrication technologies
- next-generation semiconductor chips
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