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14 pages, 2286 KB

Open AccessArticle

Development of Piezoresistive Micropressure Sensor Based on Grooved Diaphragm with Back Peninsulas and Trenches

by Peicang Chen, Lei Guo, Jiahao Feng, Chenxi Li, Yan Liu and Weidong Wang

Micromachines 2026, 17(8), 968; https://doi.org/10.3390/mi17080968 (registering DOI) - 16 Aug 2026

To validate the effectiveness of the grooved diaphragm with back peninsulas and trenches (GDPT) and the radial basis function neural network (RBFNN)-based dimension generator in the development of a 1 kPa piezoresistive micropressure sensor, this paper presents a comprehensive investigation into the design, [...] Read more.

To validate the effectiveness of the grooved diaphragm with back peninsulas and trenches (GDPT) and the radial basis function neural network (RBFNN)-based dimension generator in the development of a 1 kPa piezoresistive micropressure sensor, this paper presents a comprehensive investigation into the design, fabrication, and characterization of the anticipative sensor prototype. The GDPT achieves favorable sensing stress and reduced deflection, enabling a favorable trade-off between sensitivity and nonlinearity; the RBFNN-based generator efficiently determines practicable dimensions for the complex structure, offering a significant improvement over the conventional trial-and-error process. Characterization results demonstrate that the fabricated sensor achieves sensitivity of 13.01 mV/(V·kPa) and nonlinearity of 0.26% FS within the pressure range of 0–1 kPa, in good agreement with the preset design target. This work verifies the validity of the proposed approach and offers a holistic methodology for developing high-performance piezoresistive sensors. Full article

(This article belongs to the Special Issue Recent Advances in Silicon-Based MEMS Sensors and Actuators)

20 pages, 2489 KB

Open AccessArticle

High-Update-Rate Frequency Readout of Sinusoidal Signals for Silicon Resonant Accelerometers Using Digital Closed-Loop Frequency Tracking

by Xiangyu Zhang, Libin Huang, Song Xue and Zhenyu Sheng

Micromachines 2026, 17(6), 683; https://doi.org/10.3390/mi17060683 - 30 May 2026

Viewed by 829

Abstract

Silicon resonant accelerometers generate sinusoidal outputs with frequency shifts that carry acceleration information. At high update rates, conventional counting-based readout suffers from gate-boundary timing quantization. This work proposes a high-update-rate frequency readout method that reconstructs frequency from the continuous phase evolution of the [...] Read more.

Silicon resonant accelerometers generate sinusoidal outputs with frequency shifts that carry acceleration information. At high update rates, conventional counting-based readout suffers from gate-boundary timing quantization. This work proposes a high-update-rate frequency readout method that reconstructs frequency from the continuous phase evolution of the original sinusoidal resonant signal through quadrature demodulation, phase extraction, and phase difference rather than waveform reshaping and edge counting. To implement the proposed readout chain, an FLL–PLL cooperative loop was included to assist coarse acquisition and fine tracking on a Zynq-7020 platform. This study focuses on the readout principle, FPGA implementation, and prototype-level evaluation. At a 1 kHz update rate, the proposed method showed a lower theoretical quantization limit than the synchronous multi-cycle counting method. Under room-temperature conditions, after a 30 min startup, the proposed method reduced the standard deviation of the 1-second-averaged zero-bias output over 1800–5400 s from 4.1 μg to 2.4 μg and reduced the frequency-difference peak-to-peak value from 0.03743 Hz to 0.02410 Hz. These results support the feasibility and practical value of the proposed method for high-update-rate readout of sinusoidal resonant signals under the tested steady-state conditions. Full article

(This article belongs to the Special Issue Recent Advances in Silicon-Based MEMS Sensors and Actuators)

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14 pages, 4642 KB

Open AccessArticle

A Silicon Resonant Pressure Microsensor Based on Frequency-Ratio Measurement for High-Temperature Applications

by Zhaoyuan Tan, Pengxiang Ye, Xiaohan Liu, Bo Xie, Yulan Lu, Deyong Chen and Junbo Wang

Micromachines 2026, 17(3), 293; https://doi.org/10.3390/mi17030293 - 27 Feb 2026

Viewed by 675

Abstract

This paper presents a high-temperature silicon resonant pressure microsensor capable of stable operation up to 175 °C and 175 MPa, addressing the critical need for reliable pressure monitoring in deep well drilling and petroleum exploration. To overcome the inherent trade-off between pressure range [...] Read more.

This paper presents a high-temperature silicon resonant pressure microsensor capable of stable operation up to 175 °C and 175 MPa, addressing the critical need for reliable pressure monitoring in deep well drilling and petroleum exploration. To overcome the inherent trade-off between pressure range and sensitivity in diaphragm-based sensors, the sensor incorporates V-shaped micro-beam supports that convert radial compressive stress into supplementary axial tensile stress on the resonant beams. This innovative force-transmission structure enhances both pressure resistance and positive stress sensitivity, enabling range extension while maintaining adequate sensitivity. A key feature of this work is the implementation of a frequency-ratio measurement scheme utilizing a dedicated pressure-insensitive reference resonator. This approach effectively eliminates the dependence on the stability of the external crystal oscillator frequency, a significant source of error in high-temperature environments where stable clock sources are costly or unavailable. Experimental results demonstrate that the fabricated sensor achieves a pressure sensitivity of 723.56 ppm/MPa for Resonator I and −436.60 ppm/MPa for Resonator II. The frequency-ratio output scheme maintains a measurement accuracy better than 0.02% FS (within the 0–36 MPa verification range) even when using a low-stability oscillator at 125 °C, significantly outperforming conventional direct-frequency measurement methods. The sensor’s combination of an extended pressure range, high-temperature capability, and robust frequency-ratio output offers a promising solution for high-precision pressure sensing in extreme downhole conditions. Full article

(This article belongs to the Special Issue Recent Advances in Silicon-Based MEMS Sensors and Actuators)

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17 pages, 4562 KB

Open AccessArticle

Study on Anisotropic Mechanical Properties of Single-Crystal Silicon at Different Strain Rates

by Zhongwang Tian, Wei Xue, Wenzhong Lou, Min Liu, Hengzhen Feng, Xiaoxia Wang, Shiteng Li and Shaokuan Wu

Micromachines 2025, 16(7), 744; https://doi.org/10.3390/mi16070744 - 25 Jun 2025

Cited by 8 | Viewed by 3069

Abstract

To examine the impact of the strain rate on the anisotropic mechanical characteristics of single-crystal silicon, nanoindentation and micro-tensile–compression tests were performed. This study analyzed the effects of varying crystal orientations at different strain rates on load–displacement behavior, elastic modulus, hardness, fracture toughness, [...] Read more.

To examine the impact of the strain rate on the anisotropic mechanical characteristics of single-crystal silicon, nanoindentation and micro-tensile–compression tests were performed. This study analyzed the effects of varying crystal orientations at different strain rates on load–displacement behavior, elastic modulus, hardness, fracture toughness, and true stress–strain responses. The nanoindentation results showed that at room temperature, single-crystal silicon exhibited an elastic recovery rate of approximately 42%. Notably, the elastic modulus remained unaffected by strain rate variations, whereas hardness increased with higher strain rates. Fracture toughness at room temperature displayed marked anisotropy, with the <100> orientation exhibiting the lowest value at 0.691 MPa·m^1/2 and the <110> orientation showing the highest one at 0.797 MPa·m^1/2. Additionally, tensile and compression experiments revealed that the fracture strength of <100>-oriented silicon increased from 117 MPa at a strain rate of 0.001 s⁻¹ to 550 MPa at a strain rate of 0.01 s⁻¹. Full article

(This article belongs to the Special Issue Recent Advances in Silicon-Based MEMS Sensors and Actuators)

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15 pages, 4873 KB

Open AccessArticle

Near-Infrared Spectral MEMS Gas Sensor for Multi-Component Food Gas Detection

by Xiaojian Yan, Yao Tan, Yi Wang, Gongdai Chen, Weigao Xia, Gang Zhou, Hongliang Luo, Hao Liu, Tianxun Gong and Xiaosheng Zhang

Micromachines 2025, 16(2), 135; https://doi.org/10.3390/mi16020135 - 24 Jan 2025

Cited by 3 | Viewed by 4055

Abstract

The complex application environments of gas detection, such as in industrial process monitoring and control, atmospheric and environmental monitoring, and food safety, require real-time and online high-sensitivity gas detection, as well as the accurate identification and quantitative analysis of gas samples. Despite the [...] Read more.

The complex application environments of gas detection, such as in industrial process monitoring and control, atmospheric and environmental monitoring, and food safety, require real-time and online high-sensitivity gas detection, as well as the accurate identification and quantitative analysis of gas samples. Despite the progress in gas analysis and detection methods, high-precision and high-sensitivity detection requirements for target gases of multiple components in mixed gases are still challenging. Here, we demonstrate a micro-electromechanical system (MEMS) with near-infrared (NIR) spectral gas detection technology and spectral model training, which is used to improve the detection and classification of multi-component gases in food. During blind sample testing, the NIR spectral gas sensor demonstrated over 90% accuracy in identifying mixed gases, as well as achieving the classification of ethanol concentration. We envision that our design strategy of an NIR spectral gas sensor could enhance the gas detection and distinguishing ability under the conditions of background gas interference and cross-interference in multi-component detection. Full article

(This article belongs to the Special Issue Recent Advances in Silicon-Based MEMS Sensors and Actuators)

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14 pages, 7150 KB

Open AccessArticle

The Effect of Metal Shielding Layer on Electrostatic Attraction Issue in Glass–Silicon Anodic Bonding

by Wenqi Yang, Yong Ruan and Zhiqiang Song

Micromachines 2025, 16(1), 31; https://doi.org/10.3390/mi16010031 - 28 Dec 2024

Cited by 2 | Viewed by 5178

Abstract

Silicon–glass anode bonding is the key technology in the process of wafer-level packaging for MEMS sensors. During the anodic bonding process, the device may experience adhesion failure due to the influence of electric field forces. A common solution is to add a metal [...] Read more.

Silicon–glass anode bonding is the key technology in the process of wafer-level packaging for MEMS sensors. During the anodic bonding process, the device may experience adhesion failure due to the influence of electric field forces. A common solution is to add a metal shielding layer between the glass substrate and the device. In order to solve the problem of device failure caused by the electrostatic attraction phenomenon, this paper designed a double-ended solidly supported cantilever beam parallel plate capacitor structure, focusing on the study of the critical size of the window opening in the metal layer for the electric field shielding effect. The metal shield consists of 400 Å of Cr and 3400 Å of Au. Based on theoretical calculations, simulation analysis, and experimental testing, it was determined that the critical size for an individual opening in the metal layer is 180 μm × 180 μm, with the movable part positioned 5 μm from the bottom, which does not lead to failure caused by stiction due to electrostatic pull-in of the detection structure. It was proven that the metal shielding layer is effective in avoiding suction problems in secondary anode bonding. Full article

(This article belongs to the Special Issue Recent Advances in Silicon-Based MEMS Sensors and Actuators)

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Review

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15 pages, 4058 KB

Open AccessReview

Application Prospects of a Silicon-Based MEMS Safety and Arming Device for a Micro-Explosive Train

by Wei Ren, Dongpeng Zhang, Enyi Chu, Tengjiang Hu, Anmin Yang, Hui Li, Jianhua Chen, Jiao Li and Wei Liu

Micromachines 2025, 16(5), 497; https://doi.org/10.3390/mi16050497 - 24 Apr 2025

Cited by 5 | Viewed by 2837

Abstract

As the initial energetic device and driving force of weapon systems, pyrotechnics serve as the core and most sensitive explosive initiating device of weaponry. To accommodate the development requirements of various informatized and miniaturized weapons, MEMS pyrotechnics, characterized primarily by energy conversion informatization, [...] Read more.

As the initial energetic device and driving force of weapon systems, pyrotechnics serve as the core and most sensitive explosive initiating device of weaponry. To accommodate the development requirements of various informatized and miniaturized weapons, MEMS pyrotechnics, characterized primarily by energy conversion informatization, structural miniaturization, and train integration, have become a significant direction in the development of pyrotechnics technology. MEMS Safety and Arming Devices, serving as the energy transfer control mechanisms for micro-explosive trains in MEMS pyrotechnics, are one of the key technologies in the design of MEMS pyrotechnics. This study conducted a classification study of a silicon-based MEMS Safety and Arming Device from the perspective of micro-explosive train structures, analyzed the technical principles of different S&A device, explored their application progress and research status, and summarizes the trends of the micro-miniaturization, integration, and informatization of the silicon-based MEMS Safety and Arming Device, providing new ideas for the research and the design of MEMS Safety and Arming Devices. Full article

(This article belongs to the Special Issue Recent Advances in Silicon-Based MEMS Sensors and Actuators)

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34 pages, 15971 KB

Open AccessReview

MEMS Acoustic Sensors: Charting the Path from Research to Real-World Applications

by Qingyi Wang, Yang Zhang, Sizhe Cheng, Xianyang Wang, Shengjun Wu and Xufeng Liu

Micromachines 2025, 16(1), 43; https://doi.org/10.3390/mi16010043 - 30 Dec 2024

Cited by 18 | Viewed by 15389

Abstract

MEMS acoustic sensors are a type of physical quantity sensor based on MEMS manufacturing technology for detecting sound waves. They utilize various sensitive structures such as thin films, cantilever beams, or cilia to collect acoustic energy, and use certain transduction principles to read [...] Read more.

MEMS acoustic sensors are a type of physical quantity sensor based on MEMS manufacturing technology for detecting sound waves. They utilize various sensitive structures such as thin films, cantilever beams, or cilia to collect acoustic energy, and use certain transduction principles to read out the generated strain, thereby obtaining the targeted acoustic signal’s information, such as its intensity, direction, and distribution. Due to their advantages in miniaturization, low power consumption, high precision, high consistency, high repeatability, high reliability, and ease of integration, MEMS acoustic sensors are widely applied in many areas, such as consumer electronics, industrial perception, military equipment, and health monitoring. Through different sensing mechanisms, they can be used to detect sound energy density, acoustic pressure distribution, and sound wave direction. This article focuses on piezoelectric, piezoresistive, capacitive, and optical MEMS acoustic sensors, showcasing their development in recent years, as well as innovations in their structure, process, and design methods. Then, this review compares the performance of devices with similar working principles. MEMS acoustic sensors have been increasingly widely applied in various fields, including traditional advantage areas such as microphones, stethoscopes, hydrophones, and ultrasound imaging, and cutting-edge fields such as biomedical wearable and implantable devices. Full article

(This article belongs to the Special Issue Recent Advances in Silicon-Based MEMS Sensors and Actuators)

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