Recent Advances in Memory Materials and Devices
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E：Engineering and Technology".
Deadline for manuscript submissions: closed (30 November 2023) | Viewed by 1758
Special Issue Editor
Special Issue Information
Dear Colleagues,
Significant progress has been made in semiconductor memory, especially phase-change memory (PCM) based on heterostructure and superlattice structure materials, which have recently attracted considerable attention due to their excellent performance. Phase-change heterostructure (PCH) can overcome the low-precision bottleneck that limits multibit storage and parallel computing in conventional PCM, offering novel physical and chemical properties for semiconductor memory devices.
The development of a new heterostructure for PCM and ovonic threshold switch (OTS) is necessary for their emerging practical device applications. For instance, Sb2Te3/TiTe2, the multilayer PCH architecture was designed for two-dimensional (2D) phase transitions in nanometer-thick Sb2Te3 phase-change material sublayers that are clamped by confinement TiTe2 sublayers, enabling well-controlled cumulative/progressive SET (crystallization) and iterative/stepwise RESET (amorphization) operations.
This Special Issue aims to present the most recent advances in the field of semiconductor memory, which focuses on PCM and OTS. We invite contributions of original research articles, as well as review articles on topics including but not limited to the theoretical calculation, synthesis, characterization, and application of such novel heterostructures for PCM or OTS.
Dr. Keyuan Ding
Guest Editor
Manuscript Submission Information
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Keywords
- phase-change memory
- heterostructure
- superlattice structure
- ovonic threshold switch
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