Recent Advances in Implantable Neural Interfaces

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E:Engineering and Technology".

Deadline for manuscript submissions: closed (20 March 2021) | Viewed by 6562

Special Issue Editor


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Guest Editor
Department of Biomedical Engineering, The University of Massachusetts - Lowell, Lowell, MA 01854, USA
Interests: neural interfaces; chronic pain; neuromodulation; assay development

Special Issue Information

Dear Colleagues,

Implantable neural interfaces may be used for monitoring and/or modulating neurophysiological activity in the peripheral or central nervous systems. As such, this broad range of devices offers tremendous opportunities to modulate pathologies affected by the nervous system, such as mood disorders, urinary incontinence, and chronic pain. Despite substantial advances in fabrication and interfacing technologies over recent years, the field still faces challenges related to long-term biocompatibility as well as open questions regarding the theoretical/mechanistic underpinnings of the therapeutic action of these interfaces.

This Special Issue of Micromachines seeks to showcase research manuscripts and review articles that focus on novel technological, biological, and/or theoretical developments in implantable electrical or optical recording and stimulating neural interfaces. Specifically, the goal of this Special Issue will be to showcase research that addresses fundamental challenges facing the adoption of electrical and optical interfaces in either the peripheral or central nervous systems.

Dr. Bryan James Black
Guest Editor

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Keywords

  • neural interface
  • neuromodulation
  • electrical stimulation
  • optical stimulation
  • single-unit recordings
  • neuroinflammatory response
  • intracortical recordings
  • DRG stimulation

Published Papers (2 papers)

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Research

11 pages, 3236 KiB  
Communication
Influence of Implantation Depth on the Performance of Intracortical Probe Recording Sites
by Joshua O. Usoro, Komal Dogra, Justin R. Abbott, Rahul Radhakrishna, Stuart F. Cogan, Joseph J. Pancrazio and Sourav S. Patnaik
Micromachines 2021, 12(10), 1158; https://doi.org/10.3390/mi12101158 - 27 Sep 2021
Cited by 7 | Viewed by 2632
Abstract
Microelectrode arrays (MEAs) enable the recording of electrical activity from cortical neurons which has implications for basic neuroscience and neuroprosthetic applications. The design space for MEA technology is extremely wide where devices may vary with respect to the number of monolithic shanks as [...] Read more.
Microelectrode arrays (MEAs) enable the recording of electrical activity from cortical neurons which has implications for basic neuroscience and neuroprosthetic applications. The design space for MEA technology is extremely wide where devices may vary with respect to the number of monolithic shanks as well as placement of microelectrode sites. In the present study, we examine the differences in recording ability between two different MEA configurations: single shank (SS) and multi-shank (MS), both of which consist of 16 recording sites implanted in the rat motor cortex. We observed a significant difference in the proportion of active microelectrode sites over the 8-week indwelling period, in which SS devices exhibited a consistent ability to record activity, in contrast to the MS arrays which showed a marked decrease in activity within 2 weeks post-implantation. Furthermore, this difference was revealed to be dependent on the depth at which the microelectrode sites were located and may be mediated by anatomical heterogeneity, as well as the distribution of inhibitory neurons within the cortical layers. Our results indicate that the implantation depth of microelectrodes within the cortex needs to be considered relative to the chronic performance characterization. Full article
(This article belongs to the Special Issue Recent Advances in Implantable Neural Interfaces)
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16 pages, 5360 KiB  
Article
Silicon Carbide and MRI: Towards Developing a MRI Safe Neural Interface
by Mohammad Beygi, William Dominguez-Viqueira, Chenyin Feng, Gokhan Mumcu, Christopher L. Frewin, Francesco La Via and Stephen E. Saddow
Micromachines 2021, 12(2), 126; https://doi.org/10.3390/mi12020126 - 26 Jan 2021
Cited by 10 | Viewed by 3405
Abstract
An essential method to investigate neuromodulation effects of an invasive neural interface (INI) is magnetic resonance imaging (MRI). Presently, MRI imaging of patients with neural implants is highly restricted in high field MRI (e.g., 3 T and higher) due to patient safety concerns. [...] Read more.
An essential method to investigate neuromodulation effects of an invasive neural interface (INI) is magnetic resonance imaging (MRI). Presently, MRI imaging of patients with neural implants is highly restricted in high field MRI (e.g., 3 T and higher) due to patient safety concerns. This results in lower resolution MRI images and, consequently, degrades the efficacy of MRI imaging for diagnostic purposes in these patients. Cubic silicon carbide (3C-SiC) is a biocompatible wide-band-gap semiconductor with a high thermal conductivity and magnetic susceptibility compatible with brain tissue. It also has modifiable electrical conductivity through doping level control. These properties can improve the MRI compliance of 3C-SiC INIs, specifically in high field MRI scanning. In this work, the MRI compliance of epitaxial SiC films grown on various Si wafers, used to implement a monolithic neural implant (all-SiC), was studied. Via finite element method (FEM) and Fourier-based simulations, the specific absorption rate (SAR), induced heating, and image artifacts caused by the portion of the implant within a brain tissue phantom located in a 7 T small animal MRI machine were estimated and measured. The specific goal was to compare implant materials; thus, the effect of leads outside the tissue was not considered. The results of the simulations were validated via phantom experiments in the same 7 T MRI system. The simulation and experimental results revealed that free-standing 3C-SiC films had little to no image artifacts compared to silicon and platinum reference materials inside the MRI at 7 T. In addition, FEM simulations predicted an ~30% SAR reduction for 3C-SiC compared to Pt. These initial simulations and experiments indicate an all-SiC INI may effectively reduce MRI induced heating and image artifacts in high field MRI. In order to evaluate the MRI safety of a closed-loop, fully functional all-SiC INI as per ISO/TS 10974:2018 standard, additional research and development is being conducted and will be reported at a later date. Full article
(This article belongs to the Special Issue Recent Advances in Implantable Neural Interfaces)
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