2D Semiconductors for CMOS Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 30 November 2026 | Viewed by 124

Special Issue Editor


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Guest Editor
Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, College of Future Information Technology, Fudan University, Shanghai 200433, China
Interests: ultra-scaled transistors; 2D materials; in-memory computing; in-memory logic

Special Issue Information

Dear Colleagues,

As conventional silicon CMOS technology approaches fundamental scaling and energy-efficiency limits, exploring new channel materials and device architectures has become increasingly important. Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides and layered oxide semiconductors, have attracted significant attention due to their atomically thin bodies, excellent electrostatic gate control, and dangling-bond-free surfaces. These unique properties make them promising candidates for future CMOS technologies and enable new opportunities for ultra-scaled devices, heterogeneous integration, and monolithic three-dimensional (3D) integration.

Recent advances in material synthesis, interface engineering, and device fabrication have led to significant progress in high-performance 2D transistors and circuit demonstrations. In particular, the development of two-dimensional integrated circuits (2D ICs) based on atomically thin semiconductors offers a potential pathway to overcome the scaling challenges faced by conventional semiconductor technologies.

This Special Issue aims to highlight the latest research progress in materials, devices, and circuit technologies related to 2D semiconductors for CMOS applications, with a particular focus on CMOS-compatible fabrication, complementary device design, and large-scale 2D integrated circuits. Topics of interest include, but are not limited to:

  • Growth and scalable synthesis of 2D semiconductors;
  • Device physics and contact engineering of 2D transistors;
  • CMOS-compatible fabrication technologies;
  • Complementary logic devices and circuits based on 2D semiconductors;
  • Two-dimensional integrated circuits (2D ICs);
  • Monolithic 3D integration and heterogeneous integration;
  • Reliability and variability of 2D CMOS devices.

Dr. Fan Wu
Guest Editor

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Keywords

  • 2D materials
  • Semiconductors
  • CMOS
  • transistors
  • fabrication
  • integration
  • logic devices

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Published Papers

This special issue is now open for submission.
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