Development and Application of Advanced Electronic Nanodevices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E:Engineering and Technology".

Deadline for manuscript submissions: 30 July 2024 | Viewed by 616

Special Issue Editor


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Guest Editor
National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
Interests: electromagnetic energy harvesting; 2D materials; nanoscale ferroelectrics
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Special Issue Information

Dear Colleagues,

Nanoelectronics is enriched every year by new materials, innovative concepts for electronic devices, and novel functionalities. Therefore, the development and application of nanoelectronics is a hot research topic with the potential for a significant impact on industry. Therefore, this Special Issue will focus on the following topics: (i) the growth of new materials for nanoelectronics; (ii) nanoelectronic devices and circuits for microwave to THz applications; (iii) new optoelectronic devices; (iv) computing based on nanoelectronic devices: neuromorphic (artificial synapses and neurons) and quantum computing; (v) low-power electronic devices; (vi) reconfigurable logic gates (vii) new transistors and switches; (viii) memories; and (ix) digital nanoelectronic devices. Any other subject which shows a progress in nanoelectronic devices and circuits is welcomed.

Prof. Dr. Mircea Dragoman
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • new materials
  • microwaves
  • THz
  • optoelectronics
  • neuromorphic computing
  • quantum computing

Published Papers (1 paper)

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Research

13 pages, 3153 KiB  
Article
A Ternary Inverter Based on Hybrid Conduction Mechanism of Band-to-Band Tunneling and Drift-Diffusion Process
by Bin Lu, Xin Ma, Dawei Wang, Guoqiang Chai, Yulei Chen, Zhu Li and Linpeng Dong
Micromachines 2024, 15(4), 522; https://doi.org/10.3390/mi15040522 - 13 Apr 2024
Viewed by 420
Abstract
In this paper, a novel transistor based on a hybrid conduction mechanism of band-to-band tunneling and drift-diffusion is proposed and investigated with the aid of TCAD tools. Besides the on and off states, the proposed device presents an additional intermediate state between the [...] Read more.
In this paper, a novel transistor based on a hybrid conduction mechanism of band-to-band tunneling and drift-diffusion is proposed and investigated with the aid of TCAD tools. Besides the on and off states, the proposed device presents an additional intermediate state between the on and off states. Based on the tri-state behavior of the proposed TDFET (tunneling and drift-diffusion field-effect transistor), a ternary inverter is designed and its operation principle is studied in detail. It was found that this device achieves ternary logic with only two components, and its structure is simple. In addition, the influence of the supply voltage and the key device parameters are also investigated. Full article
(This article belongs to the Special Issue Development and Application of Advanced Electronic Nanodevices)
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