High-Performance Semiconductor Memory: Capacitor-Less DRAM and Emerging Architectures
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E：Engineering and Technology".
Deadline for manuscript submissions: 31 December 2026 | Viewed by 94
Special Issue Editor
Interests: high-performance memory; capacitor-less DRAM; novel semiconductor materials; TCAD simulation; 3D integration process and materials
Special Issue Information
Dear Colleagues,
The rapid evolution of artificial intelligence and data-centric computing demands unprecedented capabilities from memory devices. To overcome the physical scaling limitations and integration complexities of conventional memory technologies, the exploration of innovative architectures, particularly capacitor-less DRAM, embedded memory systems and novel materials is critical. This Special Issue aims to highlight recent breakthroughs and future directions in high-performance memory technologies.
We invite researchers to contribute original research articles and comprehensive reviews covering advanced memory concepts. Specific areas of interest include, but are not limited to, capacitor-less DRAM architectures (e.g., 1T-DRAM, 2T-DRAM, thyristor-based memory, oxide channel-based memory), embedded memory solutions and emerging non-volatile memory systems. We also welcome studies on next-generation channel materials, advanced thin-film deposition techniques, 3D stackable integration and comprehensive TCAD simulation methodologies. This Special Issue will provide a platform to share cutting-edge developments and foster discussion on the future trajectory of high-performance memory systems.
Prof. Dr. Sung-Woong Chung
Guest Editor
Manuscript Submission Information
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Keywords
- high-performance memory
- capacitor-less DRAM (1T/2T)
- embedded memory
- thyristor-based devices
- novel channel materials
- 3D stackable architectures
- TCAD simulation
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