Advanced Optoelectronic Materials/Devices and Their Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".

Deadline for manuscript submissions: 25 May 2026 | Viewed by 525

Special Issue Editors

School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
Interests: optoelectronic materials and devices; semiconductor nanocrystals; halide perovskite
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Guest Editor
School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
Interests: optoelectronic materials and devices; halide perovskite; high-energy radiation detection
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Optoelectronic materials and devices play a pivotal role in modern technologies, enabling advances in photonics, renewable energy, displays, and sensing. With innovations in semiconductors, perovskites, 2D materials, and hybrid systems, these devices are driving breakthroughs in solar cells, LEDs, photodetectors, and next-generation imaging systems. Their applications span new energy, telecommunications, biomedical diagnostics, environmental monitoring, and the Internet of Things, highlighting their transformative potential across multiple disciplines. This Special Issue focuses on the latest research progress in optoelectronic materials and devices, including novel material design, single-crystal growth, thin-film interface optimization, device architecture engineering, and material/device stability, while also exploring fundamental operational mechanisms. The issue emphasizes current challenges and emerging opportunities in this fast-evolving field to foster breakthroughs in next-generation optoelectronic technologies. Topics of interest include, but are not limited to: novel optoelectronic materials; high-performance photodetectors, LEDs, and laser devices; perovskite and organic photovoltaics for energy conversion; flexible/wearable optoelectronics systems; device physics, stability, and scalable fabrication techniques; characterization of novel optoelectronic films and devices.

Dr. Jing Wei
Prof. Dr. Fangze Liu
Guest Editors

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Keywords

  • optoelectronic materials
  • device architecture
  • perovskite photovoltaics
  • flexible/wearable optoelectronics
  • stability
  • scalability
  • single crystal

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Published Papers (1 paper)

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Research

18 pages, 4583 KB  
Article
Bright Blue Light Emission of ZnCl2-Doped CsPbCl1Br2 Perovskite Nanocrystals with High Photoluminescence Quantum Yield
by Bo Feng, Youbin Fang, Jin Wang, Xi Yuan, Jihui Lang, Jian Cao, Jie Hua and Xiaotian Yang
Micromachines 2025, 16(8), 920; https://doi.org/10.3390/mi16080920 - 9 Aug 2025
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Abstract
The future development of perovskite light-emitting diodes (LEDs) is significantly limited by the poor stability and low brightness of the pure-blue emission in the wavelength range of 460–470 nm. In this study, the Cl/Br element ratio in CsPbClxBr3−x perovskite nanocrystals [...] Read more.
The future development of perovskite light-emitting diodes (LEDs) is significantly limited by the poor stability and low brightness of the pure-blue emission in the wavelength range of 460–470 nm. In this study, the Cl/Br element ratio in CsPbClxBr3−x perovskite nanocrystals (NCs) was modulated to precisely control their blue emission in the 428–512 nm spectral region. Then, the undoped CsPbCl1Br2 and the ZnCl2-doped CsPbCl1Br2 perovskite NCs were synthesized via the hot-injection method and investigated using variable-temperature photoluminescence (PL) spectroscopy. The PL emission peak of the ZnCl2-doped CsPbCl1Br2 perovskite NCs exhibits a blue shift from 475 nm to 460 nm with increasing ZnCl2 doping concentration. Additionally, the ZnCl2-doped CsPbCl1Br2 perovskite NCs show a high photoluminescence quantum yield (PLQY). The variable-temperature PL spectroscopy results show that the ZnCl2-doped CsPbCl1Br2 perovskite NCs have a larger exciton binding energy than the CsPbCl1Br2 perovskite NCs, which is indicative of a potentially higher PL intensity. To assess the stability of the perovskite NCs, high-temperature experiments and ultraviolet-irradiation experiments were conducted. The results indicate that zinc doping is beneficial for improving the stability of the perovskite NCs. The ZnCl2-doped CsPbCl1Br2 perovskite NCs were post-treated using didodecylammonium bromide, and after the post-treatment, the PLQY increased to 83%. This is a high PLQY value for perovskite NC-LEDs in the blue spectral range, and it satisfies the requirements of practical display applications. This work thus provides a simple preparation method for pure blue light-emitting materials. Full article
(This article belongs to the Special Issue Advanced Optoelectronic Materials/Devices and Their Applications)
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