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Micromachines
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Novel RF Nano- and Microsystems
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Novel RF Nano- and Microsystems

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".

Deadline for manuscript submissions: 31 August 2026 | Viewed by 4628

Special Issue Editor

Dr. Zhongqian Niu

E-Mail Website
Guest Editor
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Interests: millimeter wave and terahertz; solid-state circuits; passive circuits; B5G&6G technology

Special Issue Information

Dear Colleagues,

Within the framework of Novel RF Nano- and Microsystems, millimeter-wave and terahertz circuits are increasingly emerging as key enabling technologies for achieving substantial improvements in system performance and functional expansion. As operating frequencies extend into the millimeter-wave and terahertz regimes, the electromagnetic wavelengths become highly compatible with micro- and nanoscale structures, enabling deep co-integration of RF circuits with nanomaterials, micro/nano devices, and advanced packaging technologies. This synergy allows multiple functions—including communication, sensing, imaging, and control—to be integrated within extremely compact system footprints. Owing to their ultra-wide bandwidth, high spatial resolution, and strong sensitivity to material, dielectric, and molecular properties, millimeter-wave and terahertz circuits demonstrate unique advantages in emerging applications such as nanoscale sensing, on-chip imaging, microsystem-level communication interconnects, and multiphysics-coupled control. Looking forward, with continued advances in nanoelectronic devices, two-dimensional materials, and three-dimensional heterogeneous integration, millimeter-wave and terahertz circuits are expected to drive RF systems within Novel RF Nano- and Microsystems from discrete functional modules toward highly integrated microsystem platforms, providing critical technological support for next-generation intelligent sensing, ultra-high-speed communications, and microsystem-level RF applications.

Dr. Zhongqian Niu
Guest Editor

Manuscript Submission Information

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Keywords

  • RF Nano- and Microsystems
  • millimeter-wave and terahertz filters
  • millimeter-wave and terahertz mixers
  • millimeter-wave and terahertz multipliers
  • millimeter-wave and terahertz front end

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Published Papers (4 papers)

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Research

17 pages, 4357 KB  
Article
Fast Analysis of Multilayer Micro-Machined Coupler Based on Mode-Matching Method
by Sheng Li, Yun Zhao, Hao Gu, Shisheng Yang, Zhongbo Zhu, Chongdi Duan, Tingting Wang, Shengxiao Jin, Caixia Wang, Wei Shao and Jiangqiao Ding
Micromachines 2026, 17(4), 412; https://doi.org/10.3390/mi17040412 - 27 Mar 2026
Viewed by 1344
Abstract
The development of next-generation terahertz (THz) transmitters and receivers based on 3D stacked packaging technology relies heavily on the integration of high-performance waveguide directional couplers. This paper presents an accurate and efficient method based on the mode-matching method (MMM) for the rapid analysis [...] Read more.
The development of next-generation terahertz (THz) transmitters and receivers based on 3D stacked packaging technology relies heavily on the integration of high-performance waveguide directional couplers. This paper presents an accurate and efficient method based on the mode-matching method (MMM) for the rapid analysis of a branch waveguide coupler fabricated through a silicon-based 3D stacking process. In contrast to the traditional method using the finite-element method (FEM) in HFSS, which is cumbersome and time-consuming, the proposed method offers orders-of-magnitude speed improvement. It is especially well-suited for large-scale uncertainty error analysis and statistical evaluation of THz waveguide couplers and related components. This theoretical MMM is validated through an experiment by characterizing a deep reactive ion etching (DRIE) fabricated and 3D stacked 220 GHz waveguide coupler. Full article
(This article belongs to the Special Issue Novel RF Nano- and Microsystems)
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16 pages, 2570 KB  
Article
Tunable Bandpass Filtering in Coupled Nanodrums Enabled by 1:1 Internal Resonance
by Yikun Liu, Jiaxin Miao, Haoran Wang, Jinghong Tang, Cao Xia and Xiaoyu Liu
Micromachines 2026, 17(3), 379; https://doi.org/10.3390/mi17030379 - 20 Mar 2026
Viewed by 1144
Abstract
In recent years, microelectromechanical systems (MEMS) filters exploiting structural nonlinearity and coupled resonance have enabled programmable passband shaping beyond traditional single-peak designs, yet they still face low operating frequencies and limited electrical tuning range. Here, leveraging 1:1 internal resonance, we propose a gate-programmable [...] Read more.
In recent years, microelectromechanical systems (MEMS) filters exploiting structural nonlinearity and coupled resonance have enabled programmable passband shaping beyond traditional single-peak designs, yet they still face low operating frequencies and limited electrical tuning range. Here, leveraging 1:1 internal resonance, we propose a gate-programmable tuning strategy for two-dimensional (2D) material-based nanoelectromechanical systems (NEMS), enabling high-frequency operation and wide-range reconfigurability. Benefiting from the high resonant frequency and wide electrostatic tunability of 2D materials such as MoS2, our theoretical analysis indicates wide-range programmability up to f/f0≈200%. Sweeping Vg1=Vg2 from 9 to 16 V while maintaining ≈1:1 frequency matching shifts the passband upward quasi-linearly at 4.4~MHz/V. In contrast, with the coupling strength nearly unchanged, mV-level bias mismatch perturbs the frequency ratio by 10−5, enabling highly sensitive bandwidth trimming from 3.18 to 5.20 kHz, supporting a two-step strategy of coarse center-frequency tuning followed by fine bandwidth control. To broaden the bandwidth, we further analyze a three-drum case: with Vg1=Vg2=Vg3=16 V, the bandwidth reaches 21.79 kHz with a 5056.05 dB/MHz transition slope and 0.95 dB ripple, which is nearly 4 times wider than the two drum case with the same gate voltage. This study shows that 1:1 internal resonance can be used to tune the bandpass response of NEMS resonators. All results are obtained from theoretical modeling and numerical simulations. Full article
(This article belongs to the Special Issue Novel RF Nano- and Microsystems)
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13 pages, 4429 KB  
Article
Notch Bandpass Filter with an Independently Controllable Notch Frequency Based on SSPPs and an Annular Slot DGS
by Jinxiao Yang, Shuang Li, Zhongming Kang, Qihao Zhang and Zhe Chen
Micromachines 2026, 17(3), 340; https://doi.org/10.3390/mi17030340 - 11 Mar 2026
Viewed by 423
Abstract
In this paper, a notch bandpass filter based on spoof surface plasmon polaritons (SSPPs) is presented and systematically analyzed. The bandpass response is realized by a momentum-matched SSPP transition section and two SSPP resonant units. An annular slot defected ground structure (DGS), evolved [...] Read more.
In this paper, a notch bandpass filter based on spoof surface plasmon polaritons (SSPPs) is presented and systematically analyzed. The bandpass response is realized by a momentum-matched SSPP transition section and two SSPP resonant units. An annular slot defected ground structure (DGS), evolved from the conventional dumbbell DGS is etched on the ground plane to introduce an in-band notch. The notch frequency can be controlled independently by the DGS geometric parameters while the passband edges remain nearly unchanged. A prototype is fabricated and measured. The measured results agree well with the simulations. Two passbands are obtained from 0.67 to 3.40 GHz and from 3.67 to 4.77 GHz. The insertion loss is 0.48 dB at 2.00 GHz and 1.11 dB at 4.22 GHz. The return loss on both sides of the notch is better than −10 dB. A notch centered at 3.50 GHz provides −25 dB rejection. The compact structure and the independently controllable notch frequency make the proposed filter suitable for narrowband interference suppression in microwave and millimeter-wave front ends. Full article
(This article belongs to the Special Issue Novel RF Nano- and Microsystems)
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11 pages, 2625 KB  
Article
Design of a Low-Noise 2.4/5.5 GHz Dual-Band LNA Based on Microstrip Structure
by Mingwen Zhang, Zhiqun Cheng, Tingwei Gong, Bangjie Zheng and Zhiwei Zhang
Micromachines 2026, 17(1), 18; https://doi.org/10.3390/mi17010018 - 24 Dec 2025
Viewed by 609
Abstract
This paper presents a 2.4/5.5 GHz single-stage dual-band low-noise amplifier (DB-LNA) based on a microstrip structure. The design utilizes a purely microstrip dual-band bias circuit (DBBC), composed of series microstrip lines and radial stubs. The broadband characteristics of the radial stubs enable wide [...] Read more.
This paper presents a 2.4/5.5 GHz single-stage dual-band low-noise amplifier (DB-LNA) based on a microstrip structure. The design utilizes a purely microstrip dual-band bias circuit (DBBC), composed of series microstrip lines and radial stubs. The broadband characteristics of the radial stubs enable wide frequency coverage and good frequency selectivity. A simple series-shunt microstrip matching network is adopted to maintain a compact overall design structure. The proposed DB-LNA is fabricated using a standard printed circuit board (PCB) process. Measurement results show that the amplifier achieves gains of 15.6 dB and 12.3 dB, input return losses of 14.6 dB and 14.5 dB, and output return losses of 23.2 dB and 14.1 dB at 2.4 GHz and 5.5 GHz, respectively. The measured noise figures (NF) are 1.0 dB and 1.1 dB at the corresponding frequencies, with −3 dB bandwidths exceeding 200 MHz. Compared with existing designs, the proposed LNA demonstrates notable advantages in both noise performance and bandwidth, while occupying a compact area of only 75 × 43 mm2. Full article
(This article belongs to the Special Issue Novel RF Nano- and Microsystems)
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