Advanced Thin-Films: Design, Fabrication and Applications, Third Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: 25 April 2026 | Viewed by 1809

Special Issue Editors

Department of Fiber System Engineering, Yeungnam University, 280 Dehak-Ro, Gyeongsan 38541, Republic of Korea
Interests: thin films; energy conversion and storage; HER and OER; sensing materials; multiferroic composites; thin films and nanotechnology
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Guest Editor
Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea
Interests: semiconductor; optoelectronics; thin films and nanotechnology
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Special Issue Information

Dear Colleagues,

The field of thin films and nanotechnology has emerged as a cornerstone in modern materials science, with growing global interest driven by its vast potential for innovation across multiple disciplines. As a critical enabler of miniaturization and performance enhancement, thin-film technology plays a pivotal role in advancing microsystems, nano/microelectromechanical systems (N/MEMSs), and next-generation devices. This Special Issue on "Advanced Thin-Films: Design, Fabrication and Applications, Third Edition" seeks to present the latest research breakthroughs, fabrication techniques, and emerging applications related to advanced thin-film materials and nanotechnologies. Our goal is to provide a comprehensive platform for researchers to disseminate innovative findings and foster interdisciplinary collaboration within this dynamic research community. We welcome high-quality submissions focusing on, but not limited to, the following areas:

  • Development of functional thin films for N/MEMS, sensor systems, semiconductor devices, and optoelectronics.
  • Integration of thin films in energy-related applications such as fuel cells, lithium-ion and solid-state batteries, supercapacitors, water electrolysis and hydrogen generation systems, and energy harvesters.
  • Use of micro/nano fabrication techniques and thin-film deposition methods, including physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), molecular beam epitaxy (MBE), spin coating, chemical bath deposition (CBD), electrodeposition, electrophoretic deposition, surface micromachining and modification strategies, and additive manufacturing approaches adapted to nanostructured thin films.
  • Electronic thin films and integrated devices, including the design, simulation, and modeling of electronic thin-film structures, Fabrication of integrated systems using advanced lithographic and patterning technologies, and their applications in flexible electronics, wearable devices, and biocompatible systems.

Dr. Sagar Mane
Prof. Dr. Jae Cheol Shin
Guest Editors

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Keywords

  • thin films
  • nanoscience and nanotechnology
  • electrochemical devices
  • sensors
  • micro/nanostructures
  • semiconductors
  • energy harvesting and storage
  • ferroelectric/piezoelectric nanogenerators

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Published Papers (3 papers)

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Research

9 pages, 2766 KB  
Article
Simple Process for Flexible Light-Extracting QD Film and White OLED
by Eun Jeong Bae, Tae Jeong Hwang, Geun Su Choi, Yong-Min Lee, Byeong-Kwon Ju, Young Wook Park and Dong-Hyun Baek
Micromachines 2025, 16(12), 1367; https://doi.org/10.3390/mi16121367 - 30 Nov 2025
Viewed by 373
Abstract
Quantum dots (QDs) have tremendous potential for next-generation displays due to their high color purity, photoluminescence efficiency, and power efficiency. In this work, we present a simple and cost-effective method for fabricating flexible single- and multiple-layer films, and they can be detached and [...] Read more.
Quantum dots (QDs) have tremendous potential for next-generation displays due to their high color purity, photoluminescence efficiency, and power efficiency. In this work, we present a simple and cost-effective method for fabricating flexible single- and multiple-layer films, and they can be detached and attached to the outside of OLEDs as a light-scattering and color-conversion layer. Light extraction efficiency is enhanced by forming low-density structures by using the reactive ion etching (RIE) process. As a result, the QD/PDMS composite film allowed for color conversion and achieved an excellent light extraction efficiency of up to 9.2%. Furthermore, the QD/PDMS composite film and greenish-blue OLED produced white light (CIEx,y = 0.28, 0.41), demonstrating the potential for application in broad areas, from flexible displays to lighting. The method provides a simple and cost-effective alternative to conventional processes. Full article
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10 pages, 1671 KB  
Article
Fabrication of Nanostructures on Surface of Micro-Lens Arrays Using Reactive Ion Etching
by Tae Jeong Hwang, Eun Jeong Bae, Geun-Su Choi and Young Wook Park
Micromachines 2025, 16(12), 1306; https://doi.org/10.3390/mi16121306 - 21 Nov 2025
Viewed by 314
Abstract
In this study, we fabricated a nanostructure on the surface of the micro-lens array (MLA), which is one of the light extraction technologies of organic light-emitting diodes (OLEDs), by performing the Reactive Ion -Etching (RIE) process. The MLA consists of a lensed area [...] Read more.
In this study, we fabricated a nanostructure on the surface of the micro-lens array (MLA), which is one of the light extraction technologies of organic light-emitting diodes (OLEDs), by performing the Reactive Ion -Etching (RIE) process. The MLA consists of a lensed area and a lens-less bottom (flat film area). We performed a systematic analysis to find ways to improve the light extraction efficiency of the MLA surface and flat film area. By controlling the RIE process time and type of gas plasma, nanostructures were formed on the surface of the MLA. O2 and CF4 gas plasmas resulted in nanostructures with tall heights and high aspect ratios, whereas CHF3 and Ar gas plasmas resulted in nanostructures with small heights and low aspect ratios. Furthermore, it was found that the nanostructures were not covered over the entire area, and the extent to which the nanostructures were distributed varied depending on the process time. As the RIE process time increases, the nanostructure expands from the top surface of the MLA to the flat film area. This limited the light extraction efficiency improvement. At a short process time of 50 s, nanostructures were formed only on the upper surface of the MLA hemisphere, which increased the light extraction efficiency. However, at long process times over 50 s, the surface of the hemisphere of MLA was covered with vertically aligned nanostructures, which decreased the efficiency. While the flat film area was covered with nanostructures at the longest process time of ~3200 s, it was effective, but the total efficiency was further decreased by the trade-off between them. As a result, the high-aspect-ratio nanostructured MLA patterned only on the top surface of the hemispherical MLA with a 50 s O2 plasma treatment showed the highest efficiency, which was slightly higher than that of the bare MLA. We expect that if the nanostructures can be formed in a direction perpendicular to the MLA surface and the flat film area simultaneously, the light extraction efficiency would be further improved. Full article
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14 pages, 2468 KB  
Article
Optimizing Annealing Temperature for Enhanced Electrical Performance and Stability of Solution-Processed In2O3 Thin-Film Transistors
by Taehui Kim, Seullee Lee, Ye-Won Lee, Dongwook Kim, Youngjun Yun, Jin-Hyuk Bae, Hyeonju Lee and Jaehoon Park
Micromachines 2025, 16(10), 1091; https://doi.org/10.3390/mi16101091 - 26 Sep 2025
Viewed by 905
Abstract
This study investigates the influence of post-deposition thermal annealing temperature on the crystal structure, chemical composition, and electrical performance of solution-processed indium oxide (In2O3) thin films. Based on thermogravimetric analysis (TGA) of the precursor solution, annealing temperatures of 350, [...] Read more.
This study investigates the influence of post-deposition thermal annealing temperature on the crystal structure, chemical composition, and electrical performance of solution-processed indium oxide (In2O3) thin films. Based on thermogravimetric analysis (TGA) of the precursor solution, annealing temperatures of 350, 450, and 550 °C were adopted. The resulting In2O3 films were characterized using ultraviolet–visible (UV–Vis) spectroscopy, atomic force microscopy (AFM), Raman spectroscopy, and Hall-effect measurements to evaluate their optical, morphological, crystalline polymorphism, and electrical properties. The results revealed that the film annealed at 450 °C exhibited a field-effect mobility of 4.28 cm2/V·s and an on/off current ratio of 2.15 × 107. The measured hysteresis voltages were 3.11, 1.80, and 0.92 V for annealing temperatures of 350, 450, and 550 °C, respectively. Altogether, these findings indicate that an annealing temperature of 450 °C provides an optimal balance between the electrical performance and device stability for In2O3-based thin-film transistors (TFTs), making this condition favourable for high-performance oxide electronics. Full article
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