Special Issue "Materials Grown by Metal-Organic Vapour Phase Epitaxy"
A special issue of Materials (ISSN 1996-1944).
Deadline for manuscript submissions: closed (31 December 2016) | Viewed by 10938
Interests: MOVPE epitaxy growths of compound semiconductors and semiconductor nanostructures; optoelectronic devices; semiconductor lasers and applications
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Metal organic chemical vapor deposition (MOCVD) or metal organic vapor phase epitaxy (MOVPE) epitaxial growth technology was firstly reported in the scientific literature in 1968 by Manasevit. Since then, especially in the past fifteen years, we have witnessed the tremendous development in the MOCVD technique, both in its capability and applications.
As an epitaxial crystal growth technique used for growing high quality single crystalline thin films, MOCVD has advantages in epitaxy growths with high flexibility, well control and high productivity as compared with other epitaxial growth techniques. It has been used for growing wide variety of high quality III–V binary, ternary, quaternary, and pentanary semiconductor films and semiconductor heterostructure materials for optoelectronic, photovoltaic and high speed electronic applications. It has become the most widely used technology for the growth of III-V compounds in the industry today, and has become the preferred choice for the mass fabrication of a wide range of devices.
In addition, MOCVD is also widely used in scientific research in new materials and material nano-structures. Other than being used from growing the III-V and II-VI semiconductors, MOCVD has been used for the growth of oxides, superconductors, dielectrics, and even the deposition of metal films, including Cu for electrical interconnects. These materials are comprised of different quantum structures, such as quantum wells, wires and dots, all of which have been grown using the MOCVD technique.
It is certain that MOCVD will continue play a dominant role in the nano-material-based optoelectronic and electronic device applications, as well as study of fundamental quantum phenomena.
It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.
Dr. Tang Xiaohong
Manuscript Submission Information
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- MOCVD, MOVPE
- III-V semiconductors, II-VI semiconductors
- oxides, superconductors, dielectrics
- optoelectronics, photovoltaic devices, high speed and high power electronic devices, spintronics.