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Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges

Research Center for Wide Gap Semiconductors, State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871, China
Institute of Condensed Matter Physics, School of Physics, Peking University, Beijing 100871, China
Authors to whom correspondence should be addressed.
Academic Editor: Giorgio Biasiol
Materials 2017, 10(5), 483;
Received: 15 December 2016 / Revised: 17 March 2017 / Accepted: 7 April 2017 / Published: 2 May 2017
(This article belongs to the Special Issue Materials Grown by Metal-Organic Vapour Phase Epitaxy)
The problem of weak magnetism has hindered the application of magnetic semiconductors since their invention, and on the other hand, the magnetic mechanism of GaN-based magnetic semiconductors has been the focus of long-standing debate. In this work, nanoscale GaN:Mn wires were grown on the top of GaN ridges by metalorganic chemical vapor deposition (MOCVD), and the superconducting quantum interference device (SQUID) magnetometer shows that its ferromagnetism is greatly enhanced. Secondary ion mass spectrometry (SIMS) and energy dispersive spectroscopy (EDS) reveal an obvious increase of Mn composition in the nanowire part, and transmission electron microscopy (TEM) and EDS mapping results further indicate the correlation between the abundant stacking faults (SFs) and high Mn doping. When further combined with the micro-Raman results, the magnetism in GaN:Mn might be related not only to Mn concentration, but also to some kinds of built-in defects introduced together with the Mn doping or the SFs. View Full-Text
Keywords: semiconductor; GaN:Mn; magnetic; MOCVD semiconductor; GaN:Mn; magnetic; MOCVD
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MDPI and ACS Style

Cheng, J.; Jiang, S.; Zhang, Y.; Yang, Z.; Wang, C.; Yu, T.; Zhang, G. Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges. Materials 2017, 10, 483.

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