Next Article in Journal
Direct Growth of CuO Nanorods on Graphitic Carbon Nitride with Synergistic Effect on Thermal Decomposition of Ammonium Perchlorate
Previous Article in Journal
A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing
Previous Article in Special Issue
Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer
Open AccessCommunication

Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges

1
Research Center for Wide Gap Semiconductors, State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871, China
2
Institute of Condensed Matter Physics, School of Physics, Peking University, Beijing 100871, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Giorgio Biasiol
Materials 2017, 10(5), 483; https://doi.org/10.3390/ma10050483
Received: 15 December 2016 / Revised: 17 March 2017 / Accepted: 7 April 2017 / Published: 2 May 2017
(This article belongs to the Special Issue Materials Grown by Metal-Organic Vapour Phase Epitaxy)
The problem of weak magnetism has hindered the application of magnetic semiconductors since their invention, and on the other hand, the magnetic mechanism of GaN-based magnetic semiconductors has been the focus of long-standing debate. In this work, nanoscale GaN:Mn wires were grown on the top of GaN ridges by metalorganic chemical vapor deposition (MOCVD), and the superconducting quantum interference device (SQUID) magnetometer shows that its ferromagnetism is greatly enhanced. Secondary ion mass spectrometry (SIMS) and energy dispersive spectroscopy (EDS) reveal an obvious increase of Mn composition in the nanowire part, and transmission electron microscopy (TEM) and EDS mapping results further indicate the correlation between the abundant stacking faults (SFs) and high Mn doping. When further combined with the micro-Raman results, the magnetism in GaN:Mn might be related not only to Mn concentration, but also to some kinds of built-in defects introduced together with the Mn doping or the SFs. View Full-Text
Keywords: semiconductor; GaN:Mn; magnetic; MOCVD semiconductor; GaN:Mn; magnetic; MOCVD
Show Figures

Figure 1

MDPI and ACS Style

Cheng, J.; Jiang, S.; Zhang, Y.; Yang, Z.; Wang, C.; Yu, T.; Zhang, G. Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges. Materials 2017, 10, 483.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop