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Materials 2017, 10(3), 252;

Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer

1,2,* and 1
Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA
Saphlux Inc., Branford, CT 06405, USA
Author to whom correspondence should be addressed.
Academic Editors: Xiaohong Tang and Lioz Etgar
Received: 30 December 2016 / Revised: 22 February 2017 / Accepted: 24 February 2017 / Published: 2 March 2017
(This article belongs to the Special Issue Materials Grown by Metal-Organic Vapour Phase Epitaxy)
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We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and surface morphology of the GaN epilayer and found that the growth temperature of the AlN buffer layer played a critical role in the growth of the GaN epilayer. The low growth temperature of the AlN buffer results in gallium-polar GaN. Even a nitridation process has been conducted. High growth temperature for an AlN buffer layer is required to achieve pure N-polarity, high crystalline quality, and smooth surface morphology for a GaN epilayer. View Full-Text
Keywords: MOCVD; N-polar; GaN; AlN buffer MOCVD; N-polar; GaN; AlN buffer

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Song, J.; Han, J. Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer. Materials 2017, 10, 252.

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