Special Issue "Graphene and other Two-dimensional Materials in Nanoelectronics and Optoelectronics"

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: 15 November 2019.

Special Issue Editor

Prof. Jie Sun
E-Mail Website
Guest Editor
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden
Interests: transistors; memories; integrated circuits; interconnects; packaging; heat management; reliability; passivation; power devices; batteries and supercapacitors, thermoelectric devices; light-emitting diodes, lasers, photodetectors; solar cells; printed electronics; material synthesis methods; fundamental property studies; characterization methods

Special Issue Information

Dear Colleagues,

Graphene and other two-dimensional (2D) materials have been one of the hottest research areas in the past decade. Giant projects, e.g., the EU Graphene Flagship led by Chalmers, have been launched. Today, commercial graphene products are readily available. However, most of them are graphene-based powders, paints, and composites. They are exciting, but one should not forget that the original motivation of Geim et al. to explore graphene was to study its field effect, hoping it would play a key role in post-silicon electronics. After all, nanoelectronics and optoelectronics are the main thread for 2D materials. That is the field where scientists tell the public 2D materials could replace, or at least complement the dominant role of Si in electronics.

Graphene’s carrier mobility is one of the highest among all materials, making it promising in high speed electronics. The lack of bandgap makes the transistor on–off ratio, as well as current saturation, hard to improve. However, MoS2, phosphorene, etc., possess large enough bandgaps. 2D insulators, such as h-BN, are also available. Therefore, the combination of 2D semiconductors, conductors and insulators is very valuable in post-silicon electronics. In addition, 2D materials are promising in optoelectronics, both for active elements, such as light emitting substances, and for passive elements, such as transparent electrodes. Generally speaking, the advantages of using 2D materials in nanoelectronics and optoelectronics include their ultra-small thickness, mechanical flexibility, sustainability, large varieties of material combinations, and most importantly, their outstanding optical and electrical properties. One thing worth mentioning is that, taking graphene as an example, it is not hard to find materials competing well with graphene in terms of mobility, electrical and thermal conductivity, transmittance, flexibility, etc.; nevertheless, it seems impossible to find something that combines all these properties in one single material—I believe that this is the fascinating part of graphene.

It is my pleasure to invite you to submit manuscripts to this Special Issue. Full papers, communications and reviews on experimental and theoretical studies of atomically-thin 2D materials in nanoelectronics and optoelectronics are all welcome.

Prof. Jie Sun
Guest Editor

Manuscript Submission Information

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Keywords

  • Graphene
  • 2D materials
  • semiconductors
  • nanoelectronics
  • optoelectronics

Published Papers (4 papers)

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Research

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Open AccessArticle
Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor
Materials 2019, 12(3), 428; https://doi.org/10.3390/ma12030428 - 30 Jan 2019
Cited by 2
Abstract
Micro-light-emitting diodes (micro-LEDs) are the key to next-generation display technology. However, since the driving circuits are typically composed of Si devices, numerous micro-LED pixels must be transferred from their GaN substrate to bond with the Si field-effect transistors (FETs). This process is called [...] Read more.
Micro-light-emitting diodes (micro-LEDs) are the key to next-generation display technology. However, since the driving circuits are typically composed of Si devices, numerous micro-LED pixels must be transferred from their GaN substrate to bond with the Si field-effect transistors (FETs). This process is called massive transfer, which is arguably the largest obstacle preventing the commercialization of micro-LEDs. We combined GaN devices with emerging graphene transistors and for the first-time designed, fabricated, and measured a monolithic integrated device composed of a GaN micro-LED and a graphene FET connected in series. The p-electrode of the micro-LED was connected to the source of the driving transistor. The FET was used to tune the work current in the micro-LED. Meanwhile, the transparent electrode of the micro-LED was also made of graphene. The operation of the device was demonstrated in room temperature conditions. This research opens the gateway to a new field where other two-dimensional (2D) materials can be used as FET channel materials to further improve transfer properties. The 2D materials can in principle be grown directly onto GaN, which is reproducible and scalable. Also, considering the outstanding properties and versatility of 2D materials, it is possible to envision fully transparent micro-LED displays with transfer-free active matrices (AM), alongside an efficient thermal management solution. Full article
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Open AccessArticle
Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2
Materials 2018, 11(12), 2464; https://doi.org/10.3390/ma11122464 - 04 Dec 2018
Cited by 2
Abstract
Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other [...] Read more.
Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew high-quality single-crystalline AlN thin film on sapphire substrate with an intrinsic WS2 overlayer (WS2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaN-based deep ultraviolet light emitting diode structure on WS2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates. Full article
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Open AccessArticle
Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si
Materials 2018, 11(12), 2372; https://doi.org/10.3390/ma11122372 - 26 Nov 2018
Cited by 1
Abstract
High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a [...] Read more.
High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35% Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs. Full article
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Review

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Open AccessReview
Thermal Characterization of Low-Dimensional Materials by Resistance Thermometers
Materials 2019, 12(11), 1740; https://doi.org/10.3390/ma12111740 - 29 May 2019
Abstract
The design, fabrication, and use of a hotspot-producing and temperature-sensing resistance thermometer for evaluating the thermal properties of low-dimensional materials are described in this paper. The materials that are characterized include one-dimensional (1D) carbon nanotubes, and two-dimensional (2D) graphene and boron nitride films. [...] Read more.
The design, fabrication, and use of a hotspot-producing and temperature-sensing resistance thermometer for evaluating the thermal properties of low-dimensional materials are described in this paper. The materials that are characterized include one-dimensional (1D) carbon nanotubes, and two-dimensional (2D) graphene and boron nitride films. The excellent thermal performance of these materials shows great potential for cooling electronic devices and systems such as in three-dimensional (3D) integrated chip-stacks, power amplifiers, and light-emitting diodes. The thermometers are designed to be serpentine-shaped platinum resistors serving both as hotspots and temperature sensors. By using these thermometers, the thermal performance of the abovementioned emerging low-dimensional materials was evaluated with high accuracy. Full article
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