Next Article in Journal
Preparation of Nano-SiO2/Al2O3/ZnO-Blended PVDF Cation-Exchange Membranes with Improved Membrane Permselectivity and Oxidation Stability
Next Article in Special Issue
Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor
Previous Article in Journal
Study of Size Effect on Microstructure and Mechanical Properties of AlSi10Mg Samples Made by Selective Laser Melting
Previous Article in Special Issue
Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si
 
Search for Articles:
Title / Keyword
Author / Affiliation
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
Journals
Materials
Volume 11
Issue 12
10.3390/ma11122464
materials-logo
Submit to this Journal Review for this Journal Edit a Special Issue
► Article Menu

Article Menu

share announcement question_answer thumb_up
...
textsms
...
Article

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2

by
Yue Yin
1,2,3,†,
Fang Ren
1,2,3,†,
Yunyu Wang
1,2,3,
Zhiqiang Liu
1,2,3,*,
Jinping Ao
4,
Meng Liang
1,2,3,
Tongbo Wei
1,2,3,
Guodong Yuan
1,2,3,
Haiyan Ou
5,
Jianchang Yan
1,2,3,*,
Xiaoyan Yi
1,2,3,*,
Junxi Wang
1,2,3 and
Jinmin Li
1,2,3,*
1
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
4
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1, Minami-josanjima, Tokushima 770-8506, Japan
5
Department of Photonics Engineering, Technical University of Denmark, Ørsteds Plads 345A, DK-2800 Kongens Lyngby, Denmark
*
Authors to whom correspondence should be addressed.
†
These authors contributed equally to this work.
Materials 2018, 11(12), 2464; https://doi.org/10.3390/ma11122464
Received: 9 November 2018 / Revised: 27 November 2018 / Accepted: 1 December 2018 / Published: 4 December 2018
(This article belongs to the Special Issue Graphene and other Two-dimensional Materials in Nanoelectronics and Optoelectronics)
View Full-Text Download PDF
Browse Figures

Abstract

Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew high-quality single-crystalline AlN thin film on sapphire substrate with an intrinsic WS2 overlayer (WS2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaN-based deep ultraviolet light emitting diode structure on WS2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates. View Full-Text
Keywords: AlN thin film; WS2; MOCVD; van der Waals epitaxy AlN thin film; WS2; MOCVD; van der Waals epitaxy
►▼ Show Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited
SciFeed

Share and Cite

MDPI and ACS Style

Yin, Y.; Ren, F.; Wang, Y.; Liu, Z.; Ao, J.; Liang, M.; Wei, T.; Yuan, G.; Ou, H.; Yan, J.; Yi, X.; Wang, J.; Li, J. Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2. Materials 2018, 11, 2464. https://doi.org/10.3390/ma11122464

AMA Style

Yin Y, Ren F, Wang Y, Liu Z, Ao J, Liang M, Wei T, Yuan G, Ou H, Yan J, Yi X, Wang J, Li J. Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2. Materials. 2018; 11(12):2464. https://doi.org/10.3390/ma11122464

Chicago/Turabian Style

Yin, Yue, Fang Ren, Yunyu Wang, Zhiqiang Liu, Jinping Ao, Meng Liang, Tongbo Wei, Guodong Yuan, Haiyan Ou, Jianchang Yan, Xiaoyan Yi, Junxi Wang, and Jinmin Li. 2018. "Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2" Materials 11, no. 12: 2464. https://doi.org/10.3390/ma11122464

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Metrics

Article Access Map by Country/Region

1
Back to TopTop