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Volume 11
Issue 12
10.3390/ma11122372
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Article

Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si

by
Fang Ren
1,2,3,
Yue Yin
1,2,3,
Yunyu Wang
1,2,3,
Zhiqiang Liu
1,2,3,*,
Meng Liang
1,2,3,
Haiyan Ou
4,
Jinping Ao
5,
Tongbo Wei
1,2,3,
Jianchang Yan
1,2,3,
Guodong Yuan
1,2,3,*,
Xiaoyan Yi
1,2,3,*,
Junxi Wang
1,2,3,
Jinmin Li
1,2,3,
Dheeraj Dasa
6 and
Helge Weman
6,7,*
1
Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
4
Department of Photonics Engineering, Technical University of Denmark, Ørsteds Plads 345A, DK-2800 Kongens Lyngby, Denmark
5
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1, Minami-josanjima, Tokushima 770-8506, Japan
6
CrayoNano AS, Sluppenvegen 6, NO-7037 Trondheim, Norway
7
Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
*
Authors to whom correspondence should be addressed.
Materials 2018, 11(12), 2372; https://doi.org/10.3390/ma11122372
Received: 9 November 2018 / Revised: 21 November 2018 / Accepted: 23 November 2018 / Published: 26 November 2018
(This article belongs to the Special Issue Graphene and other Two-dimensional Materials in Nanoelectronics and Optoelectronics)
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Abstract

High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35% Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs. View Full-Text
Keywords: AlGaN; nanorod LEDs; graphene; MOCVD AlGaN; nanorod LEDs; graphene; MOCVD
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited
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MDPI and ACS Style

Ren, F.; Yin, Y.; Wang, Y.; Liu, Z.; Liang, M.; Ou, H.; Ao, J.; Wei, T.; Yan, J.; Yuan, G.; Yi, X.; Wang, J.; Li, J.; Dasa, D.; Weman, H. Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si. Materials 2018, 11, 2372. https://doi.org/10.3390/ma11122372

AMA Style

Ren F, Yin Y, Wang Y, Liu Z, Liang M, Ou H, Ao J, Wei T, Yan J, Yuan G, Yi X, Wang J, Li J, Dasa D, Weman H. Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si. Materials. 2018; 11(12):2372. https://doi.org/10.3390/ma11122372

Chicago/Turabian Style

Ren, Fang, Yue Yin, Yunyu Wang, Zhiqiang Liu, Meng Liang, Haiyan Ou, Jinping Ao, Tongbo Wei, Jianchang Yan, Guodong Yuan, Xiaoyan Yi, Junxi Wang, Jinmin Li, Dheeraj Dasa, and Helge Weman. 2018. "Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si" Materials 11, no. 12: 2372. https://doi.org/10.3390/ma11122372

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