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SiC Based Technology for High Power Electronics
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SiC Based Technology for High Power Electronics

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (30 November 2021) | Viewed by 11546

Special Issue Editor

Prof. Dr. Jawad Ul Hassan

E-Mail Website
Guest Editor
Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
Interests: wide-bandgap semiconductors; epitaxy; defects in semiconductors; high-power devices

Special Issue Information

Dear Colleagues,

Wide-bandgap semiconductors are fundamental to the field of power electronics. A number of wide-bandgap semiconductors have evolved over the past two decades; however, among the family of wide-bandgap semiconductors, SiC stand out as the most promising material for next-generation high-temperature and high-power electronic devices because of its unique combination of fundamental properties (e.g., wide bandgap, large thermal conductivity, high breakdown electric field, and high electron saturation velocity). It also has the advantage of both n- and p-type doping over a wide range, which is one of the key requirements for high-power devices. Immense collective efforts from academia and industry have enabled the availability of high-quality and large diameter (up to 200 mm) bulk-grown substates. Epitaxial growth technology is upscaling and evolving to achieve thick epilayers with controlled doping at significantly high growth rates. Several material-related issues which are detrimental for high-power device performance, such as micropipes in bulk substrates, high dislocation densities, structural defects in epilayers, carrier-lifetime-killing defects, etc., have been addressed quite successfully. The possibility to adapt from the Si platform has boosted the innovation in SiC device design and fabrication processes, and several electronic devices are already commercially available.

The aim of this Special Issue on “SiC-Based Technology for High-Power Electronics” is to bring together the recent developments in SiC material and devices for the advancement of power electronics. These developments include progress in bulk/epitaxial growth, defects, fundamental studies, device designs and characteristics, packaging, and reliability. Manuscripts in the form of full research papers, communications, and review articles are encouraged.

This Issue will provide an in-depth review of the current work in advanced materials for power electronics, and will also point to emerging and future research directions. I look forward to your contribution in this Special Issue.

Prof. Dr. Jawad Ul Hassan
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Silicon carbide
  • Power devices
  • Power electronics
  • Epitaxy
  • Crystal defects
  • Wide-bandgap semiconductors

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Published Papers (2 papers)

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Research

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10 pages, 1426 KiB  
Article
4H-SiC Schottky Barrier Diodes for Efficient Thermal Neutron Detection
by Robert Bernat, Luka Bakrač, Vladimir Radulović, Luka Snoj, Takahiro Makino, Takeshi Ohshima, Željko Pastuović and Ivana Capan
Materials 2021, 14(17), 5105; https://doi.org/10.3390/ma14175105 - 6 Sep 2021
Cited by 9 | Viewed by 3002
Abstract
In this work, we present the improved efficiency of 4H-SiC Schottky barrier diodes-based detectors equipped with the thermal neutron converters. This is achieved by optimizing the thermal neutron converter thicknesses. Simulations of the optimal thickness of thermal neutron converters have been performed using [...] Read more.
In this work, we present the improved efficiency of 4H-SiC Schottky barrier diodes-based detectors equipped with the thermal neutron converters. This is achieved by optimizing the thermal neutron converter thicknesses. Simulations of the optimal thickness of thermal neutron converters have been performed using two Monte Carlo codes (Monte Carlo N–Particle Transport Code and Stopping and Range of Ions in Matter). We have used 6LiF and 10B4C for the thermal neutron converter material. We have achieved the thermal neutron efficiency of 4.67% and 2.24% with 6LiF and 10B4C thermal neutron converters, respectively. Full article
(This article belongs to the Special Issue SiC Based Technology for High Power Electronics)
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Review

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24 pages, 5935 KiB  
Review
Selective Doping in Silicon Carbide Power Devices
by Fabrizio Roccaforte, Patrick Fiorenza, Marilena Vivona, Giuseppe Greco and Filippo Giannazzo
Materials 2021, 14(14), 3923; https://doi.org/10.3390/ma14143923 - 14 Jul 2021
Cited by 55 | Viewed by 7632
Abstract
Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of [...] Read more.
Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. This paper concisely reviews the main selective doping techniques for SiC power devices technology. In particular, due to the low diffusivity of the main impurities in SiC, ion implantation is the method of choice to achieve selective doping of the material. Hence, most of this work is dedicated to illustrating the main features of n-type and p-type ion-implantation doping of SiC and discussing the related issues. As an example, one of the main features of implantation doping is the need for post-implantation annealing processes at high temperatures (above 1500 °C) for electrical activation, thus having a notable morphological and structural impact on the material and, hence, on some device parameters. In this respect, some specific examples elucidating the relevant implications on devices’ performances are reported in the paper. Finally, a short overview of recently developed non-conventional doping and annealing techniques is also provided, although these techniques are still far from being applied in large-scale devices’ manufacturing. Full article
(This article belongs to the Special Issue SiC Based Technology for High Power Electronics)
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