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Piezoelectric, Ferroelectric and Dielectric Properties of Materials and Related Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (20 November 2023) | Viewed by 5480

Special Issue Editors


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Guest Editor
School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
Interests: piezoelectrics; ferroelectrics; dielectrics; ceramics; materials
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
School of Materials Science and Engineering, Jingdezhen Ceramic University, Jingdezhen 333403, China
Interests: dielectric ceramics; high-temperature piezoceramics; energy storage; perovskites; defect engineering

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Guest Editor
School of Materials and Engineering, Guilin University of Technology, Guilin, China
Interests: dielectric relaxation; dielectric spectroscopy; ferroelectric ceramics; impedance spectroscopy; perovskite oxides; piezoelectric ceramics

Special Issue Information

Dear Colleagues,

We are preparing a Special Issue, titled "Piezoelectric, Ferroelectric and Dielectric Properties of Materials and Related Applications", guest-edited by Guangzhi Dong, Zong-Yang Shen, and Laijun Liu, to be published in [Materials] (IF: 3.623, ISSN 1996-1944).

Piezoelectric, ferroelectric, and dielectric materials have diverse functionalities that enable numerous applications, ranging from piezoelectric sensing to dielectric energy storage, which have attracted extensive research and development interests. This Special Issue publishes experimental and theoretical papers aimed at the understanding of piezoelectric, ferroelectric, and dielectric properties, as well as their associated phenomena, in addition to applied papers dealing with the utilization of these materials in devices and systems.

This Special Issue includes—but is not limited to—the following areas:

  • Fundamentals of piezoelectric, ferroelectric, dielectric, and electrostrain properties, etc.
  • Property characterization and property–structure relationship studies.
  • Advances in processing techniques of high-performance functional materials.
  • New systems, including ceramics, crystals, thin/thick films, and composites.
  • Industrial application of piezoelectric, ferroelectric, and dielectric materials, including piezoelectric transducers/sensors, ferroelectric memory devices, electrostrictive actuators, dielectric energy storage applications, etc.
  • Challenges and perspectives of development.
  • For this Special Issue, we sincerely invite authors to contribute research articles or reviews on the broad range of topics addressed above.

Dr. Guangzhi Dong
Prof. Dr. Zong-Yang Shen
Prof. Dr. Laijun Liu
Guest Editors

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Published Papers (4 papers)

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Research

20 pages, 1209 KiB  
Article
Phase Transition and Point Defects in the Ferroelectric Molecular Perovskite (MDABCO)(NH4)I3
by Francesco Cordero, Floriana Craciun, Patrizia Imperatori, Venanzio Raglione, Gloria Zanotti, Antoniu Moldovan and Maria Dinescu
Materials 2023, 16(23), 7323; https://doi.org/10.3390/ma16237323 - 24 Nov 2023
Viewed by 851
Abstract
We measured the anelastic, dielectric and structural properties of the metal-free molecular perovskite (ABX3) (MDABCO)(NH4)I3, which has already been demonstrated to become ferroelectric below TC= 448 K. Both the dielectric permittivity measured in air on [...] Read more.
We measured the anelastic, dielectric and structural properties of the metal-free molecular perovskite (ABX3) (MDABCO)(NH4)I3, which has already been demonstrated to become ferroelectric below TC= 448 K. Both the dielectric permittivity measured in air on discs pressed from powder and the complex Young’s modulus measured on resonating bars in a vacuum show that the material starts to deteriorate with a loss of mass just above TC, introducing defects and markedly lowering TC. The elastic modulus softens by 50% when heating through the initial TC, contrary to usual ferroelectrics, which are stiffer in the paraelectric phase. This is indicative of improper ferroelectricity, in which the primary order parameter of the transition is not the electric polarization, but the orientational order of the MDABCO molecules. The degraded material presents thermally activated relaxation peaks in the elastic energy loss, whose intensities increase together with the decrease in TC. The peaks are much broader than pure Debye due to the general loss of crystallinity. This is also apparent from X-ray diffraction, but their relaxation times have parameters typical of point defects. It is argued that the major defects should be of the Schottky type, mainly due to the loss of (MDABCO)2+ and I, leaving charge neutrality, and possibly (NH4)+ vacancies. The focus is on an anelastic relaxation process peaked around 200 K at ∼1 kHz, whose relaxation time follows the Arrhenius law with τ01013 s and E0.4 eV. This peak is attributed to I vacancies (VX) hopping around MDABCO vacancies (VA), and its intensity presents a peculiar dependence on the temperature and content of defects. The phenomenology is thoroughly discussed in terms of lattice disorder introduced by defects and partition of VX among sites that are far from and close to the cation vacancies. A method is proposed for calculating the relative concentrations of VX, that are untrapped, paired with VA or forming VX–VA–VX complexes. Full article
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14 pages, 3791 KiB  
Article
Design and Test of Embedded Reconfigurable Mode Converter Based on Spontaneous Deformable Materials
by Shixiong Wang, Yilin Zhang and Jianjia Yi
Materials 2023, 16(19), 6420; https://doi.org/10.3390/ma16196420 - 27 Sep 2023
Viewed by 834
Abstract
The mode converter, as a passive mode conversion device in transmission lines, is well-investigated and widely implemented in various electromagnetic systems. However, most traditional mode converters can only realize a single conversion mode. Thus, a mode converter achieving multiple controllable output modes is [...] Read more.
The mode converter, as a passive mode conversion device in transmission lines, is well-investigated and widely implemented in various electromagnetic systems. However, most traditional mode converters can only realize a single conversion mode. Thus, a mode converter achieving multiple controllable output modes is urgently needed. In this paper, a reconfigurable mode converter operating in the microwave range is achieved by embedding a deformable all-dielectric material with quadrilateral shape into a rectangular waveguide based on coupled-mode theory. It can achieve different target modes with controllable output for the same input by exciting the deformable all-dielectric material. The design principle of the mode converter is expounded concretely and simulation is carried out using HFSS software 2022 R2. Experimental results, consisting of the simulation results, demonstrate that the proposed mode converter can achieve various mode conversions with mode purity higher than 95%. This article innovatively applies deformable materials to waveguide mode conversion, expanding the application of deformable memory materials in electromagnetic devices. Full article
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11 pages, 5575 KiB  
Article
Mn- and Yb-Doped BaTiO3-(Na0.5Bi0.5)TiO3 Ferroelectric Relaxor with Low Dielectric Loss
by Dong-Yun Gui, Xiao-Yong Ma, Hu-Die Yuan and Chun-Hai Wang
Materials 2023, 16(6), 2229; https://doi.org/10.3390/ma16062229 - 10 Mar 2023
Cited by 5 | Viewed by 1524
Abstract
In this work, a Mn-and Yb-doped BaTiO3-(Na0.5Bi0.5)TiO3 ferroelectric relaxor was designed and prepared. The effects of Mn on the microstructures, dielectric and electrical properties of the ceramics were investigated. The X-ray structural analysis shows a perovskite [...] Read more.
In this work, a Mn-and Yb-doped BaTiO3-(Na0.5Bi0.5)TiO3 ferroelectric relaxor was designed and prepared. The effects of Mn on the microstructures, dielectric and electrical properties of the ceramics were investigated. The X-ray structural analysis shows a perovskite structure. The SEM images show the homogeneous microstructure of ceramics with an average grain size of about 1 μm. The temperature-dependent permittivity shows relaxor characteristics as Mn-doped. Mn at a low level (x ≤ 0.005) is beneficial for low dielectric loss and high resistivity. The maximum resistivity of ≥3 × 1012 Ω cm and minimum dielectric loss of ≤0.06 can be achieved at x ≤ 0.005. The resistivity of the ceramics follows the Arrhenius law with activation energy decreasing from ~1.31 to 1.01 eV as x increases. With lower Mn dopant, oxygen vacancies and charge carrier concentration partially decrease with Mn doping, which is helpful to improve the insulation resistance and decrease the dielectric loss. Full article
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10 pages, 1242 KiB  
Article
Correlation between Infrared Absorption and Lithium Sublattice Disorder in Magnesium-Doped Lithium Niobate
by Andreas Kling
Materials 2023, 16(2), 797; https://doi.org/10.3390/ma16020797 - 13 Jan 2023
Cited by 1 | Viewed by 1242
Abstract
Lithium niobate is a ferro- and piezoelectric material with excellent optical properties and a wide variety of applications. The defect structures of congruent and Mg-doped crystals are still under intense discussion. In this work, undoped lithium niobate and magnesium-doped lithium niobate grown from [...] Read more.
Lithium niobate is a ferro- and piezoelectric material with excellent optical properties and a wide variety of applications. The defect structures of congruent and Mg-doped crystals are still under intense discussion. In this work, undoped lithium niobate and magnesium-doped lithium niobate grown from congruent melt with the addition of 0 to 9 mol% MgO were investigated by infrared absorption, establishing the dependence of the absorbance on the Mg-doping level in two bands related to OH stretching vibrations. The absorption band at 3485 cm1 peaks at a MgO concentration in melt of 1 mol% and vanishes for MgO concentrations above the threshold level for optical damage suppression (4.8 mol%). A corresponding peak occurs in the minimum yield of the 7Li(p,α)4He reaction during ion channeling measurements, indicating a maximum of disorder in the Li sublattice. A possible explanation for this correlation is the attribution of this absorption band to ilmenite stacking fault sequences instead of isolated NbLi antisites in undoped and low-doped material. On the other hand, the OH absorption band at 3535 cm1 stays weak up to the MgO concentration threshold, and then increases, hinting to a defect related to the increase of vacancies due to the lack of charge compensation. Full article
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