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Emerging Technologies in Nanodevices and Energy Generation Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".

Deadline for manuscript submissions: closed (15 December 2021) | Viewed by 2260

Special Issue Editor


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Guest Editor
Electrical Engineering Department, University of California Los Angeles, Center of Excellence for Green Nanotechnologies, King Abdulaziz City for Science and Technology, USA
Interests: Van der Waals semiconductors; 2D materials; nanophotonics; nanoelectronics; nanobiosensors; nanothermoelectrics; nanomaterial synthesis and characterization

Special Issue Information

Dear Colleagues,

Clean energy generation and efficient consumption are becoming significantly important for a sustainable future. Recent research on nanomaterials has enabled the realization of high-performance, energy-efficient nanodevices. Owning to their low dimensionality, extraordinary electrical, optical, thermal, and mechanical properties, nanodevices based on nanomaterials have shown their great potentials in various energy applications. Of particular interest, emerging low-dimensional materials such as transition metal dichalcogenides and MXenes, which can exhibit an atomically thin layer, have demonstrated desirable features such as superior electron mobility, exceptionally high current density, layer-dependent band gap energy, and strong excitonic transitions, enabling the path towards low energy consumption and sustainable energy generation and storage.

In this Special Issue, emerging nanodevices using novel nanomaterials and their corresponding energy applications are discussed. This includes novel transistor structures, photonic nanodevices, emerging and optimized solar cells, innovative sensors at the nanoscale, emerging nanomaterial synthesis techniques, nanomaterial characterizations, nanodevice simulations and optimizations, and integrated nanodevices and systems.

It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.

Prof. Moh R. Amer
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Nanoelectronics
  • Nanophotonics
  • Nanosensors
  • Nanosolar cells
  • Nanomaterial synthesis
  • Nanomaterial characterization
  • Nanodevice simulations
  • Nanoenabled tools
  • Nanothermal management
  • Integrated nanodevices and systems

Published Papers (1 paper)

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Research

16 pages, 4875 KiB  
Article
Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate
by Yves Mols, Abhitosh Vais, Sachin Yadav, Liesbeth Witters, Komal Vondkar, Reynald Alcotte, Marina Baryshnikova, Guillaume Boccardi, Niamh Waldron, Bertrand Parvais, Nadine Collaert, Robert Langer and Bernardette Kunert
Materials 2021, 14(19), 5682; https://doi.org/10.3390/ma14195682 - 29 Sep 2021
Cited by 4 | Viewed by 1802
Abstract
Nano-ridge engineering (NRE) is a novel method to monolithically integrate III–V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF applications. The NRE HBT stacks were grown [...] Read more.
Nano-ridge engineering (NRE) is a novel method to monolithically integrate III–V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF applications. The NRE HBT stacks were grown by metal-organic vapor-phase epitaxy on 300 mm Si (001) wafers with a double trench-patterned oxide template, in an industrial deposition chamber. Aspect ratio trapping in the narrow bottom part of a trench results in a threading dislocation density below 106∙cm−2 in the device layers in the wide upper part of that trench. NRE is used to create larger area NRs with a flat (001) surface, suitable for HBT device fabrication. Transmission electron microscopy inspection of the HBT stacks revealed restricted twin formation after the InGaP emitter layer contacts the oxide sidewall. Several structures, with varying InGaP growth conditions, were made, to further study this phenomenon. HBT devices—consisting of several nano-ridges in parallel—were processed for DC and RF characterization. A maximum DC gain of 112 was obtained and a cut-off frequency ft of ~17 GHz was achieved. These results show the potential of NRE III–V devices for hybrid III–V/CMOS technology for emerging RF applications. Full article
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