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Special Issue "Advances in Chemical Vapor Deposition"

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: 31 August 2019.

Special Issue Editor

Guest Editor
Dr. Dimitra Vernardou

Center of Materials Technology and Photonics, School of Engineering, Hellenic Mediterranean University, 710 04 Heraklion, Crete, Greece
Website 1 | Website 2 | E-Mail
Interests: CVD; metal oxides; chromogenic materials; electrodes; batteries; capacitors

Special Issue Information

Dear Colleagues,

We would like to invite you to submit your work to a Special Issue on “Advances in Chemical Vapor Deposition”. Chemical Vapor Deposition (CVD) is a process for producing solid products from gases. In a typical process, the reactants are transported to the substrate surface in the form of vapors and gases involving the dissociation and/or chemical reactions of gaseous reactants in an activated environment. CVD offers a compromise between efficiency, controllability and repeatability in the coverage of substrates for a range of applications including polymer coatings, large-screen displays, solar cells etc. The aim of this Special Issue is to give an overview of the latest experimental findings and identify the growth parameters and characteristics with desired qualities in terms of producing potentially useful devices.

Dr. Dimitra Vernardou
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1800 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (2 papers)

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Research

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Open AccessArticle
Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition
Materials 2019, 12(9), 1429; https://doi.org/10.3390/ma12091429
Received: 2 April 2019 / Revised: 15 April 2019 / Accepted: 30 April 2019 / Published: 2 May 2019
PDF Full-text (9472 KB) | HTML Full-text | XML Full-text | Supplementary Files
Abstract
An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most commonly used precursor is trimethylaluminum, which is highly reactive and pyrophoric. In the purpose of searching for a more ideal Al source, the non-pyrophoric [...] Read more.
An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most commonly used precursor is trimethylaluminum, which is highly reactive and pyrophoric. In the purpose of searching for a more ideal Al source, the non-pyrophoric aluminum tri-sec-butoxide ([Al(OsBu)3], ATSB) was introduced as a novel precursor for atomic layer deposition (ALD). After demonstrating the deposition of Al2O3 via chemical vapor deposition (CVD) and ‘pulsed CVD’ routes, the use of ATSB in an atomic layer deposition (ALD)-like process was investigated and optimized to achieve self-limiting growth. The films were characterized using spectral reflectance, ellipsometry and UV-Vis before their composition was studied. The growth rate of Al2O3 via the ALD-like process was consistently 0.12 nm/cycle on glass, silicon and quartz substrates under the optimized conditions. Scanning electron microscopy and transmission electron microscopy images of the ALD-deposited Al2O3 films deposited on complex nanostructures demonstrated the conformity, uniformity and good thickness control of these films, suggesting a potential of being used as the protection layer in photoelectrochemical water splitting. Full article
(This article belongs to the Special Issue Advances in Chemical Vapor Deposition)
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Review

Jump to: Research

Open AccessFeature PaperReview
Advancements, Challenges and Prospects of Chemical Vapour Pressure at Atmospheric Pressure on Vanadium Dioxide Structures
Materials 2018, 11(3), 384; https://doi.org/10.3390/ma11030384
Received: 1 February 2018 / Revised: 23 February 2018 / Accepted: 27 February 2018 / Published: 5 March 2018
Cited by 3 | PDF Full-text (8071 KB) | HTML Full-text | XML Full-text
Abstract
Vanadium (IV) oxide (VO2) layers have received extensive interest for applications in smart windows to batteries and gas sensors due to the multi-phases of the oxide. Among the methods utilized for their growth, chemical vapour deposition is a technology that is [...] Read more.
Vanadium (IV) oxide (VO2) layers have received extensive interest for applications in smart windows to batteries and gas sensors due to the multi-phases of the oxide. Among the methods utilized for their growth, chemical vapour deposition is a technology that is proven to be industrially competitive because of its simplicity when performed at atmospheric pressure (APCVD). APCVD’s success has shown that it is possible to create tough and stable materials in which their stoichiometry may be precisely controlled. Initially, we give a brief overview of the basic processes taking place during this procedure. Then, we present recent progress on experimental procedures for isolating different polymorphs of VO2. We outline emerging techniques and processes that yield in optimum characteristics for potentially useful layers. Finally, we discuss the possibility to grow 2D VO2 by APCVD. Full article
(This article belongs to the Special Issue Advances in Chemical Vapor Deposition)
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Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

1. Title: Chemical Vapour Deposition: An Engineering and Computational Fluid Dynamics Perspective

Authors: Charalampos S. Drosos and Ivan P. Parkin

2. Author: Dimitra Vernardou

3. Author: Patricio Häberle

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