Next Article in Journal
Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor
Previous Article in Journal
Production of Low Cost Carbon-Fiber through Energy Optimization of Stabilization Process
Article Menu
Issue 3 (March) cover image

Export Article

Open AccessFeature PaperReview
Materials 2018, 11(3), 384; https://doi.org/10.3390/ma11030384

Advancements, Challenges and Prospects of Chemical Vapour Pressure at Atmospheric Pressure on Vanadium Dioxide Structures

1
Delta Nano-Engineering Solutions Ltd., Paddock Wood, Kent TN12 6EL, UK
2
Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete, Greece
3
Institute of Electronic Structure and Laser, Foundation for Research & Technology-Hellas, P.O. Box 1527, Vassilika Vouton, 711 10 Heraklion, Crete, Greece
*
Author to whom correspondence should be addressed.
Received: 1 February 2018 / Revised: 23 February 2018 / Accepted: 27 February 2018 / Published: 5 March 2018
(This article belongs to the Special Issue Advances in Chemical Vapor Deposition)
Full-Text   |   PDF [8071 KB, uploaded 5 March 2018]   |  

Abstract

Vanadium (IV) oxide (VO2) layers have received extensive interest for applications in smart windows to batteries and gas sensors due to the multi-phases of the oxide. Among the methods utilized for their growth, chemical vapour deposition is a technology that is proven to be industrially competitive because of its simplicity when performed at atmospheric pressure (APCVD). APCVD’s success has shown that it is possible to create tough and stable materials in which their stoichiometry may be precisely controlled. Initially, we give a brief overview of the basic processes taking place during this procedure. Then, we present recent progress on experimental procedures for isolating different polymorphs of VO2. We outline emerging techniques and processes that yield in optimum characteristics for potentially useful layers. Finally, we discuss the possibility to grow 2D VO2 by APCVD. View Full-Text
Keywords: APCVD; VO2; processing parameters; 2D APCVD; VO2; processing parameters; 2D
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Drosos, C.; Vernardou, D. Advancements, Challenges and Prospects of Chemical Vapour Pressure at Atmospheric Pressure on Vanadium Dioxide Structures. Materials 2018, 11, 384.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top