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Advancements, Challenges and Prospects of Chemical Vapour Pressure at Atmospheric Pressure on Vanadium Dioxide Structures

Delta Nano-Engineering Solutions Ltd., Paddock Wood, Kent TN12 6EL, UK
Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete, Greece
Institute of Electronic Structure and Laser, Foundation for Research & Technology-Hellas, P.O. Box 1527, Vassilika Vouton, 711 10 Heraklion, Crete, Greece
Author to whom correspondence should be addressed.
Materials 2018, 11(3), 384;
Received: 1 February 2018 / Revised: 23 February 2018 / Accepted: 27 February 2018 / Published: 5 March 2018
(This article belongs to the Special Issue Advances in Chemical Vapor Deposition)
Vanadium (IV) oxide (VO2) layers have received extensive interest for applications in smart windows to batteries and gas sensors due to the multi-phases of the oxide. Among the methods utilized for their growth, chemical vapour deposition is a technology that is proven to be industrially competitive because of its simplicity when performed at atmospheric pressure (APCVD). APCVD’s success has shown that it is possible to create tough and stable materials in which their stoichiometry may be precisely controlled. Initially, we give a brief overview of the basic processes taking place during this procedure. Then, we present recent progress on experimental procedures for isolating different polymorphs of VO2. We outline emerging techniques and processes that yield in optimum characteristics for potentially useful layers. Finally, we discuss the possibility to grow 2D VO2 by APCVD. View Full-Text
Keywords: APCVD; VO2; processing parameters; 2D APCVD; VO2; processing parameters; 2D
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MDPI and ACS Style

Drosos, C.; Vernardou, D. Advancements, Challenges and Prospects of Chemical Vapour Pressure at Atmospheric Pressure on Vanadium Dioxide Structures. Materials 2018, 11, 384.

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