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Research Advances in Microelectronics Packaging and Devices: From Materials to Reliability

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 10 December 2026 | Viewed by 3700

Special Issue Editor


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Guest Editor
School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006, China
Interests: materials engineering; microelectronic packaging; materials and reliability; multiscale and multiphysics modeling; uncertainty quantification

Special Issue Information

Dear Colleagues,

The rapid evolution of integrated circuit technologies has elevated packaging to a pivotal role in enabling next-generation performance, miniaturization, and reliability. Concurrently, artificial intelligence (AI) is reshaping research paradigms, offering unprecedented opportunities for data-driven discovery and optimization. To address these transformative trends, MDPI Materials is pleased to announce a Special Issue titled “Research Advances in Microelectronics Packaging and Devices: From Materials to Reliability”.

This issue seeks high-quality contributions exploring cutting-edge developments across the packaging ecosystem—from process innovations to interconnect challenges and from atomic-scale material behavior to system-level reliability insights. Key topics include (but are not limited to):

  • Three-dimensional heterogeneous integration and advanced interconnect solutions (e.g., hybrid bonding, TSV/TGV technologies);
  • High-power device packaging for automotive, 5G/6G, and power electronics applications;
  • Material-process-reliability relationships, including novel materials and failure mechanisms under extreme conditions;
  • Physical and failure analysis of IC;
  • Uncertainty quantification in reliability modeling and AI/ML-driven approaches for predictive design and accelerated testing.

We particularly encourage submissions addressing TSV/TGV fabrication challenges, emerging packaging architectures (e.g., chipsets, photonic integration), and studies leveraging data-centric methodologies (e.g., AI/ML, multiscale simulations) to unlock new insights into material behavior, process optimization, or lifetime prediction.

For author guidelines and additional details, please visit [https://www.mdpi.com/journal/materials/instructions].

Join us in advancing the frontiers of microelectronics packaging—a field where materials innovation, process precision, and intelligent analytics converge to redefine the future of ICs.

Dr. Zhiheng Huang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • microelectronic packaging
  • high-power device packaging
  • materials and device reliability
  • TSV/TGV
  • hybrid bonding
  • AI/ML
  • microstructure
  • uncertainty quantification
  • physical and failure analysis

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Published Papers (3 papers)

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Research

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14 pages, 5339 KB  
Communication
Enhancing Electromigration Lifetime Through Controlled Reduction of Bismuth Content in Sn-Bi-Ag Solder Interconnects
by Shengbo Wang, Shuai Meng, Houlin Liu and Mingliang Huang
Materials 2025, 18(24), 5672; https://doi.org/10.3390/ma18245672 - 17 Dec 2025
Viewed by 405
Abstract
This study systematically investigates the influence of Bi content on the electromigration (EM) lifetime of low-temperature Cu/Sn-xBi-1Ag (600 μm)/Cu interconnects, where x = 57, 47 and 40 wt.%. The intrinsically higher product of diffusivity and effective charge number (DZ*) for Bi [...] Read more.
This study systematically investigates the influence of Bi content on the electromigration (EM) lifetime of low-temperature Cu/Sn-xBi-1Ag (600 μm)/Cu interconnects, where x = 57, 47 and 40 wt.%. The intrinsically higher product of diffusivity and effective charge number (DZ*) for Bi compared to Sn drives pronounced preferential migration of Bi atoms towards the anode, resulting in progressive β-Sn/Bi phase separation and linear thickening of a Bi-rich layer at the anode. Reducing the Bi content suppresses the EM-induced atomic flux (JEM) through three principal mechanisms: (i) a decrease in the atomic concentration of mobile Bi atoms; (ii) a reduction in electrical resistivity that weakens the electron wind force; and (iii) an increase in lattice diffusion distance that lowers the effective diffusion coefficient (Deff). The suppression of JEM directly governs the thickening kinetics of anodic Bi layer, as evidenced by the close agreement between the calculated (1:0.40:0.23) and measured (1:0.45:0.26) anodic Bi layer growth rate ratios. Consequently, the EM lifetime is significantly extended from 62.3 h (Sn-57Bi-1Ag) to 164.9 h (Sn-47Bi-1Ag) and 414.1 h (Sn-40Bi-1Ag), representing 2.6-fold and 6.6-fold improvements, respectively. This study highlights that reducing the Bi content is an effective strategy for enhancing the EM reliability of Sn-Bi-Ag solder interconnects. Full article
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14 pages, 4305 KB  
Article
Constitutive Model of Secondary Annealing Behavior of Cu-Cu Joints in Cu/SiO2 Hybrid Bonding
by Yiming Hao, Si Chen, Chao Li, Zejian Chen, Fei Qin, Pei Chen, Renjie Tian and Ziyang Li
Materials 2025, 18(22), 5152; https://doi.org/10.3390/ma18225152 - 13 Nov 2025
Viewed by 2434
Abstract
In this study, the stress–strain constitutive models of Cu-Cu joints in hybrid bonding after primary and secondary annealing were determined using nanoindentation experiments and finite element inverse analysis, and the correlation mechanism between the microstructure and macroscopic mechanical properties in hybrid bonding Cu-Cu [...] Read more.
In this study, the stress–strain constitutive models of Cu-Cu joints in hybrid bonding after primary and secondary annealing were determined using nanoindentation experiments and finite element inverse analysis, and the correlation mechanism between the microstructure and macroscopic mechanical properties in hybrid bonding Cu-Cu joints during secondary annealing was revealed. The 350–400 °C secondary annealing facilitates recrystallization–grain growth, increasing grain size from 0.62 μm after primary annealing to 0.71 μm, accompanied by a 12% reduction in kernel average misorientation (KAM) values. This process enhances interface non-planarization and optimizes bonding quality. Concurrently, the secondary annealed Cu-Cu joints exhibit a softening effect, manifested by decreasing trends in elastic modulus (131.02 → 118.98 GPa), hardness (1.78 → 1.51 GPa), and yield strength (70.52 → 56.12 MPa), primarily attributed to the Hall–Petch effect and residual stress release. Notably, the yield strength of secondary annealed Cu-Cu joints demonstrates 31.0% and 68.5% enhancements compared to TSV-Cu (42.83 MPa) and bulk Cu (33.3 MPa), respectively. Full article
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Review

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26 pages, 4044 KB  
Review
Ga-Based Liquid Metals: Advances in Interface Thermal and Electrical Regulations for Power Electronics Integration
by Canyu Liu, Tianqi Liu, Zhiwei Huang, Xiangyi Li, Jiabao Zheng, Guoxi Li, Gan Wang, Wentao Liu and Changqing Liu
Materials 2026, 19(8), 1599; https://doi.org/10.3390/ma19081599 - 16 Apr 2026
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Abstract
Ga-based liquid metals (GLMs) have been considered as promising thermal and electrical interface materials for advanced power electronics, combining high thermal conductivity (some types even >30 W/m·K) with fluidity at room temperature. This review systematically evaluates the dual roles of GLMs in power [...] Read more.
Ga-based liquid metals (GLMs) have been considered as promising thermal and electrical interface materials for advanced power electronics, combining high thermal conductivity (some types even >30 W/m·K) with fluidity at room temperature. This review systematically evaluates the dual roles of GLMs in power electronics packaging. Their function in thermal management as both thermal interface materials and active cooling media is first examined, followed by an analysis of their capabilities in forming electrical interconnections via low-temperature bonding in fluidic and solid states. However, reliable integration remains challenging due to interfacial reactions and instability with metal substrates. We discuss interfacial mechanisms with Cu and common metallizations, along with emerging regulation strategies such as surface coatings and process acceleration techniques. By examining these interfacial interactions, this work aims to guide the selection and design of surface modification strategies to either promote or inhibit reactions as needed, supporting the development of robust power electronic packaging. Full article
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