Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
5.8
3.1
Journals
Materials
Special Issues
Novel Semiconductor Devices and Nanomaterials for Energy, Power and High-Frequency...
materials-logo
Submit to Materials Review for Materials Propose a Special Issue

Journal Menu

► Journal Menu

Journal Browser

► Journal Browser
share announcement

Novel Semiconductor Devices and Nanomaterials for Energy, Power and High-Frequency Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Energy Materials".

Deadline for manuscript submissions: closed (20 June 2024) | Viewed by 1933

Special Issue Editors

Prof. Dr. Helmut Baumgart

E-Mail Website
Guest Editor
Electrical and Computer Engineering, Old Dominion University, Norfolk, UV 23529, USA
Interests: nanoelectronics; sensors; wafer bonding; thermoelectronics; atomic layer deposition of semiconducting films
Dr. Qiliang Li

E-Mail Website
Guest Editor
College of Engineering and Computing, George Mason University, Fairfax, VA 22030, USA
Interests: wide-bandgap semiconductor; sensors; nanoelectronics; artificial intelligence
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

There is a continuous quest in novel semiconductors and nanomaterials to address the current challenges in energy efficient, high-power, and high-frequency devices. The integration of new semiconductor materials into conventional devices and circuits offers unique advantages, which often lead to significant breakthroughs.  The objective of this Special Issue of Materials is to report the novel electronics concepts and device designs based on new semiconductors and nanomaterials. Topics of interest include, but are not limited to, the following:

  • Semiconductor materials for renewable energy;
  • Device designs for energy efficient electronics;
  • New wide-bandgap semiconductors for high power;
  • Integration of nanomaterials for electronics and photonics;
  • New device concepts for energy harvesting;
  • Nanoscale semiconductor field effect transistors;
  • Semiconductor and nanomaterials for THz electronics;
  • Diamond-based electronics;
  • Ga2O3 and GaN devices for high-power and high-frequency applications;
  • Semiconducting Telluride and Selenide films for thermoelectric applications;
  • Metal–organic frameworks as semiconductors.

Prof. Dr. Helmut Baumgart
Dr. Qiliang Li
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • wide-bandgap semiconductors
  • power electronics
  • two-dimensional materials
  • energy conversion
  • solar cells
  • sustainable electronics
  • RF electronics
  • rectifier diodes
  • field effect transistors

Published Papers (2 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

Jump to: Review

13 pages, 9090 KiB  
Article
Design and Simulation of Tunneling Diodes with 2D Insulators for Rectenna Switches
by Evelyn Li, Parameswari Raju and Erhai Zhao
Materials 2024, 17(4), 953; https://doi.org/10.3390/ma17040953 - 19 Feb 2024
Viewed by 1240
Abstract
Rectenna is the key component in radio-frequency circuits for receiving and converting electromagnetic waves into direct current. However, it is very challenging for the conventional semiconductor diode switches to rectify high-frequency signals for 6G telecommunication (>100 GHz), medical detection (>THz), and rectenna solar [...] Read more.
Rectenna is the key component in radio-frequency circuits for receiving and converting electromagnetic waves into direct current. However, it is very challenging for the conventional semiconductor diode switches to rectify high-frequency signals for 6G telecommunication (>100 GHz), medical detection (>THz), and rectenna solar cells (optical frequencies). Such a major challenge can be resolved by replacing the conventional semiconductor diodes with tunneling diodes as the rectenna switches. In this work, metal–insulator–metal (MIM) tunneling diodes based on 2D insulating materials were designed, and their performance was evaluated using a comprehensive simulation approach which includes a density-function theory simulation of 2D insulator materials, the modeling of the electrical characteristics of tunneling diodes, and circuit simulation for rectifiers. It is found that novel 2D insulators such as monolayer TiO2 can be obtained by oxidizing sulfur-metal layered materials. The MIM diodes based on such insulators exhibit fast tunneling and excellent current rectifying properties. Such tunneling diodes effectively convert the received high-frequency electromagnetic waves into direct current. Full article
(This article belongs to the Special Issue Novel Semiconductor Devices and Nanomaterials for Energy, Power and High-Frequency Applications)
►▼ Show Figures

Figure 1

Review

Jump to: Research

43 pages, 24810 KiB  
Review
A Review of Diamond Materials and Applications in Power Semiconductor Devices
by Feiyang Zhao, Yongjie He, Bin Huang, Tianyi Zhang and Hao Zhu
Materials 2024, 17(14), 3437; https://doi.org/10.3390/ma17143437 - 11 Jul 2024
Viewed by 312
Abstract
Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high critical breakdown electric field (20 MV/cm), [...] Read more.
Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high critical breakdown electric field (20 MV/cm), and high thermal conductivity (22 W/cm·K), showing good prospects in high-power applications. The lack of n-type diamonds limits the development of bipolar devices; most of the research focuses on p-type Schottky barrier diodes (SBDs) and unipolar field-effect transistors (FETs) based on terminal technology. In recent years, breakthroughs have been made through the introduction of new structures, dielectric materials, heterogeneous epitaxy, etc. Currently, diamond devices have shown promising applications in high-power applications, with a BV of 10 kV, a BFOM of 874.6 MW/cm2, and a current density of 60 kA/cm2 already realized. This review summarizes the research progress of diamond materials, devices, and specific applications, with a particular focus on the development of SBDs and FETs and their use in high-power applications, aiming to provide researchers with the relevant intuitive parametric comparisons. Finally, the paper provides an outlook on the parameters and development directions of diamond power devices. Full article
(This article belongs to the Special Issue Novel Semiconductor Devices and Nanomaterials for Energy, Power and High-Frequency Applications)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-2
Back to TopTop