Special Issue "Advances in Ultra-Wide Bandgap Devices"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics".

Deadline for manuscript submissions: 30 November 2021.

Special Issue Editor

Dr. Farid Medjdoub
E-Mail
Guest Editor
IEMN (Institute of Electronics, Microelectronics and Nanotechnology), Avenue Poincaré, 59650 Villeneuve d’Ascq, France
Interests: active devices; semiconductor; design, simulation, fabrication, and advanced characterization of innovative wide bandgaps and ultra-wide bandgaps devices
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Special Issue Information

Dear Colleagues,

Gallium nitride (GaN)- and silicon carbide (SiC)-based devices are continuously maturing with a significantly growing market penetration for many applications. Ultra-wide bandgap semiconductors (UWBG), commonly defined as materials with bandgaps exceeding that of GaN (3.4 eV) and SiC (3.3 eV), are attracting increasing attention. The main reason for this is that many of the figures‐of‐merit for the device performance scale with an increasing bandgap result in potentially far superior performances. This clearly represents an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications.

This Special Issue aims to highlight recent developments and the state of the art in the field of UWBG and devices, including both experimental results and theoretical developments. These include advances in all important aspects of key materials such as Ga2O3, AlN, BN, AlGaN, and diamond; as well as the modelling, simulation, design, epitaxy, fabrication technology, reliability, novel device architectures, advanced characterizations and applications to improve the performance of devices and circuits.

Dr. Farid Medjdoub
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1800 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • UWBG growth and material properties
  • power electronics
  • device simulation
  • processing
  • electrical and structural characterization

Published Papers (1 paper)

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Research

Article
AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts
Electronics 2021, 10(6), 635; https://doi.org/10.3390/electronics10060635 - 10 Mar 2021
Viewed by 1066
Abstract
High power electronics using wide bandgap materials are maturing rapidly, and significant market growth is expected in a near future. Ultra wide bandgap materials, which have an even larger bandgap than GaN (3.4 eV), represent an attractive choice of materials to further push [...] Read more.
High power electronics using wide bandgap materials are maturing rapidly, and significant market growth is expected in a near future. Ultra wide bandgap materials, which have an even larger bandgap than GaN (3.4 eV), represent an attractive choice of materials to further push the performance limits of power devices. In this work, we report on the fabrication of AlN/AlGaN/AlN high-electron mobility transistors (HEMTs) using 50% Al-content on the AlGaN channel, which has a much wider bandgap than the commonly used GaN channel. The structure was grown by metalorganic chemical vapor deposition (MOCVD) on AlN/sapphire templates. A buffer breakdown field as high as 5.5 MV/cm was reported for short contact distances. Furthermore, transistors have been successfully fabricated on this heterostructure, with low leakage current and low on-resistance. A remarkable three-terminal breakdown voltage above 4 kV with an off-state leakage current below 1 μA/mm was achieved. A regrown ohmic contact was used to reduce the source/drain ohmic contact resistance, yielding a drain current density of about 0.1 A/mm. Full article
(This article belongs to the Special Issue Advances in Ultra-Wide Bandgap Devices)
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