Latest Progress in Wide Band-Gap Semiconductors
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".
Deadline for manuscript submissions: closed (1 January 2022) | Viewed by 2998
Special Issue Editors
Interests: GaN-based wide bandgap semiconductors; 2D semiconductor materials
Interests: GaN-based wide bandgap semiconductors; semiconductor lighting
Interests: III-V Nitride; epitaxial growth; MOS/MIS interface; power devices; solar cells; photodiodes; electronic devices
Special Issues, Collections and Topics in MDPI journals
Interests: epitaxial thin film growth by MOCVD and RF sputtering; in situ/operando x-ray characterizations of III–V nitride; GaN-based heterointerface and surface dynamics; micro-LEDs
Special Issue Information
Dear Colleagues,
Semiconductor materials and devices play a major role in science and technology in modern society. In fact, semiconductor material systems have now entered a new era, driven by demands stemming from accelerating advances in science and technology, which push forward the development of wide bandgap semiconductor materials and devices toward high power, low energy consumption, multiwavelength band, ultrafast response, miniaturization, and high integration degrees. The high-tech industry in the areas of information, energy, transportation, etc., constantly needs new wide bandgap semiconductor materials and devices, and those demands become a new and strong driving force for a more rapid development of the latter. The topics covered within this Special Issue include but are not limited to the following:
- The epitaxial growth of the wide band gap semiconductors (III-nitride semiconductors, SiC, ZnO, diamond, Ga2O3, etc.) and their low-dimensional quantum structures;
- Optical and electronic properties, doping and defects, structural analysis, and defect characterization;
- Optical devices such as micro-LEDs, VCSEL, edge emitting laser diodes, UV–LEDs, UV–laser diodes, single photon emitters, photodetectors, and intersubband emitters;
- Electronic devices for high power switching, high frequency, RF applications, etc.;
- Novel materials, nanostructures, and device concepts.
Prof. Dr. Ning Tang
Prof. Dr. Bo Shen
Dr. Liwen Sang
Dr. Guangxu Ju
Guest Editors
Manuscript Submission Information
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