Editorial Board for section 'Semiconductor Devices'
- Microelectronics Section
- Optoelectronics Section
- Industrial Electronics Section
- Power Electronics Section
- Bioelectronics Section
- Microwave and Wireless Communications Section
- Computer Science & Engineering Section
- Networks Section
- Systems & Control Engineering Section
- Circuit and Signal Processing Section
- Semiconductor Devices Section
- Artificial Intelligence Section
- Electrical and Autonomous Vehicles Section
- Electronic Multimedia Section
- Electronic Materials, Devices and Applications Section
Please see the section webpage for more information on this section.
Please note that the order in which the Editors appear on this page is alphabetical, and follows the structure of the editorial board presented on the MDPI website under information for editors: editorial board responsibilities.
Members
Department of Engineering, University of Ferrara, 44122 Ferrara, Italy
Interests: III-V and wide band-gap transistors; non linear and high-frequency device characterization and measurements; transistor compact modeling; micro- and millimeter-wave power amplifier design
Interests: III-V and wide band-gap transistors; non linear and high-frequency device characterization and measurements; transistor compact modeling; micro- and millimeter-wave power amplifier design
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
Interests: films; nanocrystalline; semiconductor
Interests: films; nanocrystalline; semiconductor
School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK
Interests: semiconductor materials and devices; photonics; electronics; integration of photonics and electronics; solar energy materials
Special Issues, Collections and Topics in MDPI journals
Interests: semiconductor materials and devices; photonics; electronics; integration of photonics and electronics; solar energy materials
Special Issues, Collections and Topics in MDPI journals
Guangdong Province Key Laboratory of Display Material and Technology, Center for Neutron Science and Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
Interests: multiscale computational methods; first-principles calculations; phonon polaritons; cavity quantum electrodynamics; Raman tensor; field-induced electron emission theory; semiconductor defect theory; computational physics; computational materials science
Special Issues, Collections and Topics in MDPI journals
Interests: multiscale computational methods; first-principles calculations; phonon polaritons; cavity quantum electrodynamics; Raman tensor; field-induced electron emission theory; semiconductor defect theory; computational physics; computational materials science
Special Issues, Collections and Topics in MDPI journals
Department of Electrical and Computer Engineering, University of California, Santa Cruz, Santa Cruz, CA 95064, USA
Interests: nanoscience and nanotechnology; physics of advanced materials and devices; optoelectronic and photovoltaic devices; nanomaterial-based ultracapacitors and sensors, comparison to experiments
Interests: nanoscience and nanotechnology; physics of advanced materials and devices; optoelectronic and photovoltaic devices; nanomaterial-based ultracapacitors and sensors, comparison to experiments
Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
Interests: nanophotonics; semiconductor optoelectronics; optical microcavity; photoluminescence; Raman spectroscopy
Interests: nanophotonics; semiconductor optoelectronics; optical microcavity; photoluminescence; Raman spectroscopy
Department of Electronic Engineering, National United University, Miaoli City 36063, Taiwan
Interests: semiconductor physics; optoelectronic devices; nanotechnology
Special Issues, Collections and Topics in MDPI journals
Interests: semiconductor physics; optoelectronic devices; nanotechnology
Special Issues, Collections and Topics in MDPI journals
School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
Interests: semiconductor photodetector; low dimensional semiconductor devices; spin photocurrent; topological insulator; circular photogalvanic effect
Interests: semiconductor photodetector; low dimensional semiconductor devices; spin photocurrent; topological insulator; circular photogalvanic effect
Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA
Interests: power semiconductor devices; device reliability; 3D IC design; RF circuits; deep learning for security and biomedical applications
Interests: power semiconductor devices; device reliability; 3D IC design; RF circuits; deep learning for security and biomedical applications
Department of Physics, Dalian University of Technology, Dalian 116024, China
Interests: low-temperature scanning tunneling microscopy & spectroscopy; molecular beam epitaxy; spin-polarized STM studies on iron-based superconductors as well as Skyrmion
Special Issues, Collections and Topics in MDPI journals
Interests: low-temperature scanning tunneling microscopy & spectroscopy; molecular beam epitaxy; spin-polarized STM studies on iron-based superconductors as well as Skyrmion
Special Issues, Collections and Topics in MDPI journals
Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Interests: wide bandgap semiconductor; electronic devices; functional oxides
Special Issues, Collections and Topics in MDPI journals
Interests: wide bandgap semiconductor; electronic devices; functional oxides
Special Issues, Collections and Topics in MDPI journals
Peter Grünberg Institute 9, Forschungszentrum Jülich, 52425 Jülich, Germany
Interests: semiconductor devices; electronic materials
Special Issues, Collections and Topics in MDPI journals
Interests: semiconductor devices; electronic materials
Special Issues, Collections and Topics in MDPI journals
