Conferences
29 September–4 October 2019, Kyoto, Japan
International Conference on Silicon Carbide and Related Materials 2019
The aim of this conference is to discuss recent advances in crystal growth, characterization, control of material properties, device fabrication and packaging technologies, as well as system applications concerning silicon carbide (SiC) and related materials. The objective is to promote the production and commercialization of advanced devices and systems for low-resistance / high-voltage switching, high-frequency amplification, and high-temperature operation. The conference also serves as an international forum for the exchange of ideas on recent scientific and technical issues among researchers and engineers in industrial, academic and public sectors.
The scope of this conference covers the following topics on silicon carbide and related materials, including other wide bandgap (WBG) semiconductors such as III-nitrides, oxides, and diamond.
Topics will include:
- Growth and Wafer Manufacturing
- Characterization and Defect Engineering
- MOS Gate Stacks and Device Processing
- Power and High-Frequency Devices
- Packaging and Applications
