New Advances in Memristors: Design and Applications
A special issue of Chips (ISSN 2674-0729).
Deadline for manuscript submissions: 31 December 2024 | Viewed by 2698
Special Issue Editor
Special Issue Information
Dear Colleagues,
Advances in memory technology, covering materials, device structures, and applications, signify a crucial shift in the landscape of modern computing. Material breakthroughs, including the development of innovative compounds and structures, have paved the way for next-generation memory devices. From NAND flash to emerging technologies such as resistive random-access memory (RRAM) and phase-change memory (PCM), these materials offer improved performance, increased densities, and enhanced reliability.
Simultaneously, improvements in memristor device architectures, such as crossbar arrays and 3D stacking, have expanded storage capacities and processing speeds. By vertically integrating multiple memory layers and emulating neural connections, these architectures optimize spatial efficiency, enhancing not only storage but also computation paradigms. These advancements have wide-ranging applications across industries, revolutionizing data storage and processing. From enabling edge computing for real-time analytics to stimulating advancements in artificial intelligence and autonomous systems, the impact of these memory technologies is immense. As research continues to push the boundaries of possibilities, the future promises even more transformative innovations, reshaping the technological landscape and unlocking the frontiers of computing.
This Special Issue aims to collect submissions related to the design and applications of memristors. Both research articles and reviews are welcome.
Dr. Arindam Bala
Guest Editor
Manuscript Submission Information
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Keywords
- memristor
- neuromorphic computing
- circuit integration
- scaling
- resistive switching
- crossbar array
- multilevel switching
- energy efficiency
- novel materials
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