Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Chips
Special Issues
New Advances in Memristors: Design and Applications
share announcement

New Advances in Memristors: Design and Applications

A special issue of Chips (ISSN 2674-0729).

Deadline for manuscript submissions: 30 June 2025 | Viewed by 4886

Special Issue Editor

Dr. Arindam Bala

E-Mail Website
Guest Editor
Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
Interests: 2D materials; MOCVD; memristor; nanoelectronics; flexible electronics

Special Issue Information

Dear Colleagues,

Advances in memory technology, covering materials, device structures, and applications, signify a crucial shift in the landscape of modern computing. Material breakthroughs, including the development of innovative compounds and structures, have paved the way for next-generation memory devices. From NAND flash to emerging technologies such as resistive random-access memory (RRAM) and phase-change memory (PCM), these materials offer improved performance, increased densities, and enhanced reliability.

Simultaneously, improvements in memristor device architectures, such as crossbar arrays and 3D stacking, have expanded storage capacities and processing speeds. By vertically integrating multiple memory layers and emulating neural connections, these architectures optimize spatial efficiency, enhancing not only storage but also computation paradigms. These advancements have wide-ranging applications across industries, revolutionizing data storage and processing. From enabling edge computing for real-time analytics to stimulating advancements in artificial intelligence and autonomous systems, the impact of these memory technologies is immense. As research continues to push the boundaries of possibilities, the future promises even more transformative innovations, reshaping the technological landscape and unlocking the frontiers of computing.

This Special Issue aims to collect submissions related to the design and applications of memristors. Both research articles and reviews are welcome.

Dr. Arindam Bala
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Chips is an international peer-reviewed open access quarterly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • memristor
  • neuromorphic computing
  • circuit integration
  • scaling
  • resistive switching
  • crossbar array
  • multilevel switching
  • energy efficiency
  • novel materials

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue policies can be found here.

Published Papers (3 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

Jump to: Review

11 pages, 18756 KiB  
Article
Three-Dimensional Simulation of Bipolar Resistive Switching Memory with Embedded Conductive Nanocrystals in an Oxide Matrix
by Juan Ramirez-Rios, José Juan Avilés-Bravo, Mario Moreno-Moreno, Luis Hernández-Martínez and Alfredo Morales-Sánchez
Chips 2025, 4(1), 11; https://doi.org/10.3390/chips4010011 - 11 Mar 2025
Viewed by 367
Abstract
In this work, the simulation of deoxidation–oxidation of oxygen vacancies (VOs) in an oxide matrix with embedded conductive nanocrystals (c-NCs) is carried out for the development of bipolar resistive switching memories (BRSMs). We have employed the three-dimensional kinetic Monte Carlo (3D-kMC) [...] Read more.
In this work, the simulation of deoxidation–oxidation of oxygen vacancies (VOs) in an oxide matrix with embedded conductive nanocrystals (c-NCs) is carried out for the development of bipolar resistive switching memories (BRSMs). We have employed the three-dimensional kinetic Monte Carlo (3D-kMC) method to simulate the RS behavior of BRSMs. The c-NC is modeled as fixed oxygen vacancy (f-VO) clusters, defined as sites with zero recombination probability. The three-dimensional oxygen vacancy configuration (3D-VOC) obtained for each voltage step of the simulation is used to calculate the resistive state and the electrical current. It was found that the c-NC reduces the voltage required to switch the memory state from a high to a low resistive state due to the increase in a nonhomogeneous electrical field between electrodes. Full article
(This article belongs to the Special Issue New Advances in Memristors: Design and Applications)
►▼ Show Figures

Figure 1

9 pages, 3584 KiB  
Communication
Thermal Analysis and Evaluation of Memristor-Based Compute-in-Memory Chips
by Awang Ma, Bin Gao, Peng Yao, Jianshi Tang, He Qian and Huaqiang Wu
Chips 2025, 4(1), 9; https://doi.org/10.3390/chips4010009 - 5 Mar 2025
Viewed by 508
Abstract
The rapid advancement of artificial intelligence (AI) technologies has significantly increased the demand for high-performance computational hardware. Memristor-based compute-in-memory (CIM) technology, also known as resistive random-access memory (RRAM)-based CIM technology, shows great potential for addressing the data transfer bottleneck and supporting high-performance computing [...] Read more.
The rapid advancement of artificial intelligence (AI) technologies has significantly increased the demand for high-performance computational hardware. Memristor-based compute-in-memory (CIM) technology, also known as resistive random-access memory (RRAM)-based CIM technology, shows great potential for addressing the data transfer bottleneck and supporting high-performance computing (HPC). In this paper, a multi-scale thermal model is developed to evaluate the temperature distribution in RRAM-based CIM chips and the influence of various factors on thermal behavior. The results indicate that hotspot temperatures can be mitigated by reducing the epoxy molding compound (EMC) thickness, increasing the substrate thickness, and lowering boundary thermal resistance. Moreover, optimizing the layout of analog computing circuits and digital circuits can reduce the maximum temperature by up to 4.04 °C. Furthermore, the impact of temperature on the conductance of RRAM devices and the inference accuracy of RRAM-based CIM chips is analyzed. Simulation results reveal that thermal-induced accuracy loss in CIM chips is significant, but the computation correction method effectively reduces the accuracy loss from 66.4% to 1.4% at 85 °C. Full article
(This article belongs to the Special Issue New Advances in Memristors: Design and Applications)
►▼ Show Figures

Figure 1

Review

Jump to: Research

23 pages, 8739 KiB  
Review
Oxygen Vacancy Engineering and Its Impact on Resistive Switching of Oxide Thin Films for Memory and Neuromorphic Applications
by Biswajit Jana and Ayan Roy Chaudhuri
Chips 2024, 3(3), 235-257; https://doi.org/10.3390/chips3030012 - 6 Sep 2024
Cited by 1 | Viewed by 3101
Abstract
Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications. This review provides an account of the research works on tailoring RS behavior in oxide thin-film-based memristor devices by oxygen vacancy engineering. [...] Read more.
Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications. This review provides an account of the research works on tailoring RS behavior in oxide thin-film-based memristor devices by oxygen vacancy engineering. We discuss the recent research progress on controlling oxygen vacancy concentration in metal oxide thin films and its impact on their resistive switching properties for application in electronic memory and neuromorphic computing devices. Full article
(This article belongs to the Special Issue New Advances in Memristors: Design and Applications)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-3
Back to TopTop