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10 pages, 3744 KiB

Open AccessArticle

Enhancement of Microwave Dielectric Properties in Mixed-Phase Ceramics Through CuB₂O₄ Doping: Achieving Ultra-Low Loss and High Dielectric Constant

by Yuan-Bin Chen, Siyi Xiong and Jie Peng

Ceramics 2024, 7(4), 1895-1904; https://doi.org/10.3390/ceramics7040119 - 11 Dec 2024

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Abstract

The microwave dielectric properties of (1−x)Ca_0.6(La_0.9Y_0.1)_0.2667TiO₃-x(Nd_1/2La_1/2)(Mg_(1+δ)1/2Ti_1/2)O₃ ((1−x)CYTO-xNLMTO) ceramics were investigated in this study. It was discovered that the addition of 1 wt% CuB₂ [...] Read more.

The microwave dielectric properties of (1−x)Ca_0.6(La_0.9Y_0.1)_0.2667TiO₃-x(Nd_1/2La_1/2)(Mg_(1+δ)1/2Ti_1/2)O₃ ((1−x)CYTO-xNLMTO) ceramics were investigated in this study. It was discovered that the addition of 1 wt% CuB₂O₄ effectively enhanced the densification and improved the microwave dielectric properties of (1−x)CYTO-xNLMTO, where δ = 0.02. The new ceramic systems of (1−x)CYTO-xNLMTO could achieve ultra-low loss and a high dielectric constant. The novel ceramic systems comprising (1−x)CYTO-xNLMTO exhibited remarkably low loss and a significantly high dielectric constant. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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16 pages, 5518 KiB

Open AccessArticle

Comparing the Efficacies of Electrospun ZnO and TiO₂ Nanofibrous Interlayers for Electron Transport in Perovskite Solar Cells

by Abdullah Zafar, Waqar Iqbal, Shahzaib Khan, Aiyeshah Alhodaib and Mahvish Fatima

Ceramics 2024, 7(4), 1742-1757; https://doi.org/10.3390/ceramics7040111 - 13 Nov 2024

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Abstract

ZnO and TiO₂ are both well-known electron transport materials. Their comparison of performance is considered advantageous and novel. Therefore, a viable electrospinning route was considered for the development of highly polycrystalline TiO₂ and ZnO nanofibers as an electron transport material (ETM) [...] Read more.

ZnO and TiO₂ are both well-known electron transport materials. Their comparison of performance is considered advantageous and novel. Therefore, a viable electrospinning route was considered for the development of highly polycrystalline TiO₂ and ZnO nanofibers as an electron transport material (ETM) for perovskite solar cells. The materials were well-characterized in terms of different analytical techniques. The X-ray diffraction detected polycrystalline structural properties corresponding to TiO₂ and ZnO. Morphological analysis by scanning electron microscopy revealed that the nanofibers are long, uniform, and polycrystalline, having a diameter in the nanometer range. Optoelectronic properties showed that TiO₂ and ZnO exhibit absorption values in the ultraviolet and visible ranges, and band gap values for TiO₂ and ZnO were 3.3 and 3.2 eV, respectively. TiO₂ bandgap and semiconductor nature were more compatible with Electron Transport Layer (ETL) compared to ZnO. Electrical studies revealed that TiO₂ nanofibers have enhanced values of conductivity and sheet carrier mobility compared to ZnO nanofibers. Therefore, higher photovoltaic conversion efficiency was achieved for TiO₂ nanofibers (10.4%) compared to ZnO (8.5%). Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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25 pages, 6320 KiB

Open AccessArticle

Tunable Optical Properties and Relaxor Behavior in Ni/Ba Co-Doped NaNbO₃ Ceramics: Pathways Toward Multifunctional Applications

by Tawfik Chaabeni, Zohra Benzarti, Najmeddine Abdelmoula and Slim Zghal

Ceramics 2024, 7(4), 1670-1694; https://doi.org/10.3390/ceramics7040107 - 8 Nov 2024

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Abstract

In this study, Ni/Ba co-doped NaNbO₃ ceramics (NBNNO_x) were synthesized using a solid-state method to explore the effects of Ni²⁺ and Ba²⁺ ion substitution on the structural, optical, and dielectric properties of NaNbO₃. X-ray diffraction (XRD) [...] Read more.

In this study, Ni/Ba co-doped NaNbO₃ ceramics (NBNNO_x) were synthesized using a solid-state method to explore the effects of Ni²⁺ and Ba²⁺ ion substitution on the structural, optical, and dielectric properties of NaNbO₃. X-ray diffraction (XRD) confirmed that the ceramics retained an orthorhombic structure, with crystallinity improving as the doping content (x) increased. Significant lattice distortions induced by the Ni/Ba co-doping were observed, which were essential for preserving the perovskite structure. Raman spectroscopy revealed local structural distortions, influencing optical properties and promoting relaxor behavior. Diffuse reflectance measurements revealed a significant decrease in band gap energy from 3.34 eV for undoped NaNbO₃ to 1.08 eV at x = 0.15, highlighting the impact of co-doping on band gap tunability. Dielectric measurements indicated relaxor-like behavior at room temperature for x = 0.15, characterized by frequency-dependent anomalies in permittivity and dielectric loss, likely due to ionic disorder and structural distortions. These findings demonstrate the potential of Ni/Ba co-doped NaNbO₃ ceramics for lead-free perovskite solar cells and other functional devices, where tunable optical and dielectric properties are highly desirable. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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15 pages, 3542 KiB

Open AccessArticle

Effect of (Ba_1/3Nb_2/3)⁴⁺ Substitution on Microstructure, Bonding Properties and Microwave Dielectric Properties of Ce₂Zr₃(MoO₄)₉ Ceramics

by Huamin Gao, Xiangyu Xu, Xinwei Liu, Xiaoyu Zhang, Mingling Li, Jialun Du and Haitao Wu

Ceramics 2024, 7(3), 1172-1186; https://doi.org/10.3390/ceramics7030077 - 29 Aug 2024

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Abstract

In this study, Ce₂[Zr_1−x(Ba_1/3Nb_2/3)_x]₃(MoO₄)₉ (0.02 ≤ x ≤ 0.1, CZ_1−xN_x) ceramics were sintered at 600 °C and 700 °C using the traditional [...] Read more.

In this study, Ce₂[Zr_1−x(Ba_1/3Nb_2/3)_x]₃(MoO₄)₉ (0.02 ≤ x ≤ 0.1, CZ_1−xN_x) ceramics were sintered at 600 °C and 700 °C using the traditional solid-state method. An analysis conducted through XRD and Rietveld refinement confirmed that all the CZ_1−xN_x ceramics displayed a single phase with a trigonal structure (space group R-3c). The observed increases in cell volume with increasing x values indicate the successful substitution of (Ba_1/3Nb_2/3)⁴⁺. The high densification of the synthesized phase was validated by the density and SEM results. Additionally, the P-V-L theory demonstrates a strong correlation between the Ce-O bond and ε_r, as well as τ_f, and between the Mo-O bond and Q×f. Notably, the CZ_0.98N_0.02 ceramics demonstrated superior performance at 675 °C, exhibiting ε_r = 10.41, Q×f = 53,296 GHz, and τ_f = −23.45 ppm/°C. Finally, leveraging CZ_0.98N_0.02 ceramics as substrate materials enabled the design of a patch antenna suitable for the 5G communication band, demonstrating its significant potential in this field. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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10 pages, 3052 KiB

Open AccessArticle

Excellent Energy Storage and Photovoltaic Performances in Bi_0.45Na_0.45Ba_0.1TiO₃-Based Lead-Free Ferroelectricity Thin Film

by Jianhua Wu, Tiantian Zhang, Xing Gao, Lei Ning, Yanhua Hu, Xiaojie Lou, Yunying Liu, Ningning Sun and Yong Li

Ceramics 2024, 7(3), 1043-1052; https://doi.org/10.3390/ceramics7030068 - 1 Aug 2024

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Abstract

Inorganic dielectric films have attracted extensive attention in the field of microelectronic and electrical devices because of their wide operating temperature range, small size, and easy integration. Here, we designed and prepared eco-friendly (1-x)Bi_0.45Na_0.45Ba_0.1TiO₃-xBi(Mg_1/3 [...] Read more.

Inorganic dielectric films have attracted extensive attention in the field of microelectronic and electrical devices because of their wide operating temperature range, small size, and easy integration. Here, we designed and prepared eco-friendly (1-x)Bi_0.45Na_0.45Ba_0.1TiO₃-xBi(Mg_1/3Nb_2/3)O₃ multifunctional ferroelectric thin films for energy storage and photovoltaic. The results show that Bi(Mg_1/3Nb_2/3)O₃ can effectively improve the energy storage performance. At x = 0.05, the energy storage density and efficiency are as high as 73.1 J/cm³ and 86.2%, respectively, and can operate stably in a wide temperature range. The breakdown field strength of the thin films increased significantly, and the analysis showed that the addition of Bi(Mg_1/3Nb_2/3)O₃ caused a change in the internal conduction mechanism. At the same time, the generation of polar nanoregions increases the relaxation characteristics, thus improving the energy storage properties. In addition, the thin film material also has excellent ferroelectric photovoltaic properties. This work represents a new design paradigm that can serve as an effective strategy for developing advanced multi-functional materials. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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12 pages, 12511 KiB

Open AccessArticle

Energy Storage Performance of Na_0.5Bi_0.5TiO₃–CaHfO₃ Lead-Free Ceramics Regulated by Defect Engineering

by Zhuo Li, Jing Zhang, Zixuan Wang, Xiaotian Wei, Dingjie Long, Xin Zhao and Yanhui Niu

Ceramics 2024, 7(3), 1002-1013; https://doi.org/10.3390/ceramics7030065 - 28 Jul 2024

Viewed by 1030

Abstract

Over the past decades, Na_0.5Bi_0.5TiO₃ (NBT)-based ceramics have received increasing attention in energy storage applications due to their high power density and relatively large maximum polarization. However, their high remnant polarization (P_r) and low breakdown field [...] Read more.

Over the past decades, Na_0.5Bi_0.5TiO₃ (NBT)-based ceramics have received increasing attention in energy storage applications due to their high power density and relatively large maximum polarization. However, their high remnant polarization (P_r) and low breakdown field strength are detrimental for their practical applications. In this paper, a new solid solution (1−x)Na_0.5Bi_0.5TiO₃–xCaHfO₃ (x = 0.04, 0.08, 0.12, 0.16) was constructed by introducing CaHfO₃ into NBT, and thus was prepared using a conventional solid-state reaction. With the addition of CaHfO_3, the disorder of the structure increased, A-site vacancies formed, and thus oxygen vacancies were suppressed due to the replacement of the Na⁺ by Ca²⁺, resulting in the enhanced relaxation behavior and the reduced P_r, the refined grain, and improved breakdown strength. Furthermore, an optimal recoverable energy storage density (W_rec) of 1.2 J/cm³ was achieved in 0.92Na_0.5Bi_0.5TiO₃–0.08CaHfO₃ ceramics under the breakdown strength of 140 kV/cm, which is mainly attributed to the resultant defect of Na⁺ vacancy_. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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17 pages, 5559 KiB

Open AccessArticle

Exploring Enhanced Structural and Dielectric Properties in Ag-Doped Sr(NiNb)_0.5O₃ Perovskite Ceramic for Advanced Energy Storage

by Faouzia Tayari, Majdi Benamara, Madan Lal, Manel Essid, Priyanka Thakur, Deepak Kumar, S. Soreto Teixeira, M. P. F. Graça and Kais Iben Nassar

Ceramics 2024, 7(3), 958-974; https://doi.org/10.3390/ceramics7030062 - 10 Jul 2024

Cited by 3 | Viewed by 1250

Abstract

The ceramic Sr(NiNb)_0.5O₃, incorporating silver doping in the A site, was synthesized using a sol–gel route and subjected to comprehensive analysis through various experimental techniques. X-ray diffraction data analysis indicates a rhombohedral crystal structure. Scanning electron microscopy (SEM) examination [...] Read more.

The ceramic Sr(NiNb)_0.5O₃, incorporating silver doping in the A site, was synthesized using a sol–gel route and subjected to comprehensive analysis through various experimental techniques. X-ray diffraction data analysis indicates a rhombohedral crystal structure. Scanning electron microscopy (SEM) examination reveals densely packed grains with minimal surface porosity. A thorough investigation of electrical properties, encompassing dielectric constant, loss tangent, electrical impedance, modulus, conductivity, etc., was conducted across a wide frequency range (10³–10⁶ Hz) and temperature range (260–340 K). This analysis provided valuable insights into structure–property relationships and conduction mechanisms. The discussion highlights the significance of interface effects, space charge polarization, and Maxwell–Wagner dielectric relaxation in achieving the material’s high dielectric constant at low frequencies and elevated temperatures. Examination of temperature dependence through Nyquist plots elucidates the contributions of grain behavior to the material’s resistive and capacitive properties. The dielectric permittivity, dissipation of energy, and electrical characteristics like impedance, modulus and conductivity are notably influenced by the frequency of the applied electric field and temperature. Overall, the material exhibits promising potential for industrial applications such as energy storage, given its intriguing properties. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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14 pages, 4588 KiB

Open AccessArticle

Origin of Temperature Coefficient of Resonance Frequency in Rutile Ti_1−xZr_xO₂ Microwave Ceramics

by Izaz Khan, Aneela Khan, Raz Muhammad, Minmin Mao, Dandan Han, Kaixin Song, Wen Lei and Dawei Wang

Ceramics 2024, 7(2), 698-711; https://doi.org/10.3390/ceramics7020046 - 23 May 2024

Cited by 1 | Viewed by 1166

Abstract

In this study, we report the effect of Zr⁴⁺ doping on the optical energy gap and microwave dielectric properties of rutile TiO₂. Rietveld analysis explicitly confirmed that Zr⁴⁺ occupies the octahedral site, forming a single-phase tetragonal structure below the [...] Read more.

In this study, we report the effect of Zr⁴⁺ doping on the optical energy gap and microwave dielectric properties of rutile TiO₂. Rietveld analysis explicitly confirmed that Zr⁴⁺ occupies the octahedral site, forming a single-phase tetragonal structure below the solubility limit (x < 0.10). Notably, at x = 0.025, a significant enhancement in Q × f_o was observed. This enhancement was attributed to the reduction in dielectric loss, associated with a decrease in oxygen vacancies and a lower concentration of Ti³⁺ paramagnetic centers. This conclusion was supported by Raman and electron paramagnetic resonance spectroscopy, respectively. The origin of high τ_f in rutile Ti_1−xZr_xO₂ is explained on the basis of the octahedral distortion/tetragonality ratio, covalency, and bond strength. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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9 pages, 3570 KiB

Open AccessArticle

Nanosized Tungsten Powder Synthesized Using the Nitridation–Decomposition Method

by Qing-Yin He, Ben-Li Zhao and Shi-Kuan Sun

Ceramics 2024, 7(2), 680-688; https://doi.org/10.3390/ceramics7020044 - 11 May 2024

Cited by 1 | Viewed by 1248

Abstract

A facile, one-step nitridation–decomposition method was developed for the synthesis of nanosized tungsten powder with a high surface area. This approach involved the nitridation of WO₃ in NH₃ to form mesoporous tungsten nitride (W₂N), followed by in situ decomposition [...] Read more.

A facile, one-step nitridation–decomposition method was developed for the synthesis of nanosized tungsten powder with a high surface area. This approach involved the nitridation of WO₃ in NH₃ to form mesoporous tungsten nitride (W₂N), followed by in situ decomposition of W₂N to directly yield single-phase W particles. The phase and morphology evolution during the synthesis were systematically investigated and compared with the carbothermal reduction of WO₃. It was revealed that powdered tungsten product with single-phase particles was obtained after nitridation at 800 °C combined with in situ decomposition at 1000 °C, displaying an average particle size of 15 nm and a large specific surface area of 6.52 m²/g. Furthermore, the proposed method avoided the limitations associated with intermediate phase formation and coarsening observed in carbothermal reduction, which resulted in the growth of W particles up to ~4.4 μm in size. This work demonstrates the potential of the nitridation–decomposition approach for the scalable and efficient synthesis of high-quality, fine-grained tungsten powder. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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13 pages, 1960 KiB

Open AccessArticle

The Origin of the Low-Temperature Minimum of Electrical Resistivity in Strontium Ferromolybdate Ceramics

by Gunnar Suchaneck, Evgenii Artiukh and Gerald Gerlach

Ceramics 2024, 7(2), 491-503; https://doi.org/10.3390/ceramics7020032 - 1 Apr 2024

Viewed by 1554

Abstract

In this work, we analyze the electrical behavior of strontium ferromolybdate below room temperature. We demonstrate that in SFMO ceramics, SFMO thin films deposited by pulsed laser deposition including (100) and (111) textured thin films, as well as in nonstoichiometric SFMO ceramics, an [...] Read more.

In this work, we analyze the electrical behavior of strontium ferromolybdate below room temperature. We demonstrate that in SFMO ceramics, SFMO thin films deposited by pulsed laser deposition including (100) and (111) textured thin films, as well as in nonstoichiometric SFMO ceramics, an intergrain tunneling mechanism of charge carrier conduction leads to a decrease in resistivity with increasing temperature in the low-temperature region. This intergrain tunneling can be attributed to fluctuation-induced tunneling. On the other hand, bulk metallic resistivity of the grains, which increases with temperature, becomes dominant at higher temperatures and magnetic fluxes. The interplay of these conduction mechanisms leads to a resistivity minimum, i.e., a resistivity upturn below the temperature of minimum resistivity. Several mechanisms have been discussed in the literature to describe the low-temperature upturn in resistivity. Based on available literature data, we propose a revised model describing the appearance of a low-temperature resistivity minimum in SFMO ceramics by an interplay of fluctuation-induced tunneling and metallic conductivity. Additionally, we obtained that in the region of metallic conductivity at higher temperatures and magnetic fluxes, the pre-factor R_m of the temperature-dependent term of metallic conductivity written as a power law decreases exponentially with the temperature exponent m of this power law. Here, the value of m is determined by the charge scattering mechanism. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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12 pages, 3362 KiB

Open AccessArticle

Zero-Temperature Coefficient of Resonant Frequency in [(Mg_0.6Zn_0.4)_0.95Co_0.05]_1.02TiO_3.02-Ca_0.6(La_0.9Y_0.1)_0.2667TiO₃ Ultra-Low-Loss Composite Dielectrics

by Yuan-Bin Chen and Jie Peng

Ceramics 2024, 7(2), 466-477; https://doi.org/10.3390/ceramics7020030 - 26 Mar 2024

Viewed by 1427

Abstract

Investigating the microwave dielectric properties of ceramics prepared through the conventional solid-state route, such as x[(Mg_0.6Zn_0.4)_0.95Co_0.05]_1.02TiO_3.02-(1−x)Ca_0.6(La_0.9Y_0.1)_0.2667TiO₃, reveals notable characteristics. [(Mg_0.6 [...] Read more.

Investigating the microwave dielectric properties of ceramics prepared through the conventional solid-state route, such as x[(Mg_0.6Zn_0.4)_0.95Co_0.05]_1.02TiO_3.02-(1−x)Ca_0.6(La_0.9Y_0.1)_0.2667TiO₃, reveals notable characteristics. [(Mg_0.6Zn_0.4)_0.95Co_0.05]_1.02TiO_3.02 shows a permittivity (ε_r) of approximately 20, a high quality factor (Q × f) ranging between 250,000 and 560,000 GHz, and a temperature coefficient of resonant frequency (τ_f) of approximately −65 ppm/°C. To enhance the temperature stability, Ca_0.6(La_0.9Y_0.1)_0.2667TiO₃ featuring a τ_f value of +374 ppm/°C was incorporated into the [(Mg_0.6Zn_0.4)_0.95Co_0.05]_1.02TiO_3.02 composition. τ_f demonstrated an increase with rising Ca_0.6(La_0.9Y_0.1)_0.2667TiO₃ content, reaching zero at x = 0.95. A ceramic composition of 0.95[(Mg_0.6Zn_0.4)_0.95Co_0.05]_1.02TiO_3.02-0.05Ca_0.6(La_0.9Y_0.1)_0.2667TiO₃, incorporating 3wt.% BaCu(B₂O₅) as sintering aids, exhibited outstanding microwave dielectric properties: ε_r~22.5, Q × f~195,000 (at 9 GHz), and τ_f~0.1ppm/°C, with a sintering temperature at 950 °C. This material is proposed as a prospective candidate for 6G band components and GPS antennas. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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10 pages, 2278 KiB

Open AccessArticle

Effects of Replacing Co²⁺ with Zn²⁺ on the Dielectric Properties of Ba [Zn_1/3(Nb_1/2Ta_1/2)_2/3]O₃ Ceramics with High Dielectric Constant and High Quality Factor

by Yuan-Bin Chen, Yu Fan, Shiuan-Ho Chang and Shaobing Shen

Ceramics 2024, 7(1), 426-435; https://doi.org/10.3390/ceramics7010027 - 17 Mar 2024

Viewed by 1713

Abstract

In this study, we used solid-state synthesis to prepare Ba[(Zn_xCo_1−x)_1/3(Nb_0.5Ta_0.5)_2/3]O₃ microwave ceramics for mobile communications. Compared with Ba[Zn_1/3(Nb_0.5Ta_0.5)_2/3]O₃, in the [...] Read more.

In this study, we used solid-state synthesis to prepare Ba[(Zn_xCo_1−x)_1/3(Nb_0.5Ta_0.5)_2/3]O₃ microwave ceramics for mobile communications. Compared with Ba[Zn_1/3(Nb_0.5Ta_0.5)_2/3]O₃, in the prepared materials, Co²⁺ substitution with Zn²⁺ improved the Q × f value and enabled densification and sintering at a lower temperature. We used X-ray diffraction (XRD) and scanning electron microscopy (SEM) to analyze the obtained microstructure. Ba[(Zn_xCo_1−x)_1/3(Nb_0.5Ta_0.5)_2/3]O₃ was found to have a 1:2 ordered hexagonal structure, and its Q × f value increased with the increase in sintering temperature. In this work, excellent microwave dielectric properties—τ_f = −0.7 ppm/°C, ε_r = 34.5, and Q × f = 110,000 GHz—were obtained by sintering Ba[(Zn_0.3Co_0.7)_1/3(Nb_0.5Ta_0.5)_2/3]O₃ at 1400 °C for 5 h. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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10 pages, 5883 KiB

Open AccessArticle

Effect of Thickness on Ferroelectric Properties of Bi_3.25La_0.75Ti₃O₁₂ Thin Films

by Wenfeng Yue, Yali Cai, Quansheng Guo, Dawei Wang and Tingting Jia

Ceramics 2024, 7(1), 29-38; https://doi.org/10.3390/ceramics7010003 - 6 Jan 2024

Viewed by 2127

Abstract

The pursuit of low-power/low-voltage operation in devices has prompted a keen interest in the mesoscale effects within ferroelectric thin films. The downsizing of ferroelectrics can significantly influence performance; for instance, the remanent polarization and coercive field are susceptible to alterations based on thickness. [...] Read more.

The pursuit of low-power/low-voltage operation in devices has prompted a keen interest in the mesoscale effects within ferroelectric thin films. The downsizing of ferroelectrics can significantly influence performance; for instance, the remanent polarization and coercive field are susceptible to alterations based on thickness. In this study, randomly oriented Bi_3.25La_0.75Ti₃O₁₂ thin films were fabricated on Pt/Ti/SiO₂/Si substrates using the sol–gel method, and SEM observations revealed rod-like grains in all thin films. The investigation delved into the correlation between dielectric and ferroelectric properties with thin film thickness. The thin film exhibited an increased remanent polarization and a reduced coercive electric field. Additionally, the ferroelectric domain structure was scrutinized through PFM, and the resistor properties of the BLT4 thin film were studied, which shows the potential of BLT thin films in non-volatile memory and memristor. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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8 pages, 2232 KiB

Open AccessCommunication

Oxygen-Bonding State and Oxygen-Reduction Reaction Mechanism of Pr_0.7Ca_0.3Mn_1−xCo_xO_3−d (x = 0, 0.1, 0.2, 0.3)

by Kanghee Jo, Seungjae Lee and Heesoo Lee

Ceramics 2023, 6(4), 2386-2393; https://doi.org/10.3390/ceramics6040146 - 15 Dec 2023

Cited by 1 | Viewed by 1624

Abstract

We investigated the effects of Co doping on Pr_0.7Ca_0.3MnO_3−d in the perspective of an oxygen-bonding state change. In all compositions, Pr_0.7Ca_0.3Mn_1−xCo_xO_3−d (PCMCx, x = 0, 0.1, 0.2, 0.3) showed [...] Read more.

We investigated the effects of Co doping on Pr_0.7Ca_0.3MnO_3−d in the perspective of an oxygen-bonding state change. In all compositions, Pr_0.7Ca_0.3Mn_1−xCo_xO_3−d (PCMCx, x = 0, 0.1, 0.2, 0.3) showed an orthorhombic structure, and the lattice gradually contracted with increasing Co content. The doped Co was mostly present as 2+ and 3+, which decreased the average oxidation value of the B site and created oxygen vacancies for charge compensation. However, as the Co content increased, the proportion of Co³⁺ increased, and the content of oxygen vacancies gradually decreased. In addition, the ratio of adsorbed oxygen in PCMC0.1 was the highest, and the B-O covalency was enhanced. Accordingly, the electrochemical reaction of oxygen with the cathode material in PCMC0.1 could occur most easily, showing the smallest polarization resistance among the Co-doped Pr_0.7Ca_0.3MnO_3−d. We can confirm the formation of oxygen vacancies via Co doping and the effect of B-O covalency on the oxygen-reduction reaction of Pr_0.7Ca_0.3MnO_3−d. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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Review

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23 pages, 5735 KiB

Open AccessReview

Lead-Free NaNbO₃-Based Ceramics for Electrostatic Energy Storage Capacitors

by Sairatun Nesa Soheli, Zhilun Lu, Dongyang Sun and Islam Shyha

Ceramics 2024, 7(2), 712-734; https://doi.org/10.3390/ceramics7020047 - 23 May 2024

Viewed by 2382

Abstract

The burgeoning significance of antiferroelectric (AFE) materials, particularly as viable candidates for electrostatic energy storage capacitors in power electronics, has sparked substantial interest. Among these, lead-free sodium niobate (

{N a N b O}_{3}

) AFE materials are emerging as eco-friendly and [...] Read more.

The burgeoning significance of antiferroelectric (AFE) materials, particularly as viable candidates for electrostatic energy storage capacitors in power electronics, has sparked substantial interest. Among these, lead-free sodium niobate (

{N a N b O}_{3}

) AFE materials are emerging as eco-friendly and promising alternatives to lead-based materials, which pose risks to human health and the environment, attributed to their superior recoverable energy density and dielectric breakdown strength. This review offers an insightful overview of the fundamental principles underlying antiferroelectricity and the applications of AFE materials. It underscores the recent advancements in lead-free

{N a N b O}_{3}

-based materials, focusing on their crystal structures, phase transitions, and innovative strategies devised to tailor their electrostatic energy storage performance. Finally, this review delineates the prevailing challenges and envisages future directions in the realm of

{N a N b O}_{3}

-based electrostatic energy storage capacitors, with the goal of fostering further advancements in this pivotal field. Full article

(This article belongs to the Special Issue Advances in Electronic Ceramics)

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