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Volume 7
Issue 2
10.3390/ceramics7020046
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

Origin of Temperature Coefficient of Resonance Frequency in Rutile Ti1−xZrxO2 Microwave Ceramics

by
Izaz Khan
1,
Aneela Khan
1,
Raz Muhammad
1,*,
Minmin Mao
2,
Dandan Han
3,
Kaixin Song
2,
Wen Lei
4 and
Dawei Wang
5,*
1
Department of Physics, Abdul Wali Khan University Mardan, Mardan 23200, Pakistan
2
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
3
Key Laboratory for Special Functional Materials in Jilin Provincial Universities, Jilin Institute of Chemical Technology, Jilin 132022, China
4
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
5
School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
*
Authors to whom correspondence should be addressed.
Ceramics 2024, 7(2), 698-711; https://doi.org/10.3390/ceramics7020046
Submission received: 15 March 2024 / Revised: 2 May 2024 / Accepted: 20 May 2024 / Published: 23 May 2024
(This article belongs to the Special Issue Advances in Electronic Ceramics)
Versions Notes

Abstract

In this study, we report the effect of Zr4+ doping on the optical energy gap and microwave dielectric properties of rutile TiO2. Rietveld analysis explicitly confirmed that Zr4+ occupies the octahedral site, forming a single-phase tetragonal structure below the solubility limit (x < 0.10). Notably, at x = 0.025, a significant enhancement in Q × fo was observed. This enhancement was attributed to the reduction in dielectric loss, associated with a decrease in oxygen vacancies and a lower concentration of Ti3+ paramagnetic centers. This conclusion was supported by Raman and electron paramagnetic resonance spectroscopy, respectively. The origin of high τf in rutile Ti1−xZrxO2 is explained on the basis of the octahedral distortion/tetragonality ratio, covalency, and bond strength.
Keywords: Zr-doped TiO2; rutile; microwave dielectric properties Zr-doped TiO2; rutile; microwave dielectric properties

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MDPI and ACS Style

Khan, I.; Khan, A.; Muhammad, R.; Mao, M.; Han, D.; Song, K.; Lei, W.; Wang, D. Origin of Temperature Coefficient of Resonance Frequency in Rutile Ti1−xZrxO2 Microwave Ceramics. Ceramics 2024, 7, 698-711. https://doi.org/10.3390/ceramics7020046

AMA Style

Khan I, Khan A, Muhammad R, Mao M, Han D, Song K, Lei W, Wang D. Origin of Temperature Coefficient of Resonance Frequency in Rutile Ti1−xZrxO2 Microwave Ceramics. Ceramics. 2024; 7(2):698-711. https://doi.org/10.3390/ceramics7020046

Chicago/Turabian Style

Khan, Izaz, Aneela Khan, Raz Muhammad, Minmin Mao, Dandan Han, Kaixin Song, Wen Lei, and Dawei Wang. 2024. "Origin of Temperature Coefficient of Resonance Frequency in Rutile Ti1−xZrxO2 Microwave Ceramics" Ceramics 7, no. 2: 698-711. https://doi.org/10.3390/ceramics7020046

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