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Article

Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI

Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
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Academic Editor: Jihoon Kim
Appl. Sci. 2021, 11(15), 6708; https://doi.org/10.3390/app11156708
Received: 10 June 2021 / Revised: 16 July 2021 / Accepted: 19 July 2021 / Published: 22 July 2021
(This article belongs to the Special Issue Radio-Frequency High Power Amplifier)
This paper presents a fully integrated, four-stack, single-ended, single stage power amplifier (PA) for millimeter-wave (mmWave) wireless applications that was fabricated and designed using 45 nm complementary metal oxide semiconductor silicon on insulator (CMOS SOI) technology. The frequency of operation is from 20 GHz to 30 GHz, with 13.7 dB of maximum gain. The maximum RF (radio frequency) output power (Pout), power-added efficiency (PAE) and output 1 dB compression point are 20.5 dBm, 29% and 18.8 dBm, respectively, achieved at 24 GHz. The error vector magnitude (EVM) of 12.5% was measured at an average channel power of 14.5 dBm at the center of the the 3GPP/NR (third generation partnership project/new radio) FR2 band n258—i.e., 26 GHz—using a 100 MHz 16-quadrature amplitude modulation (QAM) 3GPP/NR orthogonal frequency division modulation (OFDM) signal. View Full-Text
Keywords: power amplifier; stacked power amplifier; CMOS SOI; mmWave; 3GPP; NR power amplifier; stacked power amplifier; CMOS SOI; mmWave; 3GPP; NR
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MDPI and ACS Style

Aikio, J.P.; Sethi, A.; Hietanen, M.; Rusanen, J.; Rahkonen, T.; Pärssinen, A. Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI. Appl. Sci. 2021, 11, 6708. https://doi.org/10.3390/app11156708

AMA Style

Aikio JP, Sethi A, Hietanen M, Rusanen J, Rahkonen T, Pärssinen A. Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI. Applied Sciences. 2021; 11(15):6708. https://doi.org/10.3390/app11156708

Chicago/Turabian Style

Aikio, Janne P., Alok Sethi, Mikko Hietanen, Jere Rusanen, Timo Rahkonen, and Aarno Pärssinen. 2021. "Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI" Applied Sciences 11, no. 15: 6708. https://doi.org/10.3390/app11156708

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