- Article
Simulation of the Effects of the Pillar Configurations on 1.2 kV 4H-SiC Superjunction DMOSFET
- Keng-Ming Liu and
- Shih-Ching Ou
4H-SiC has been studied and applied in power semiconductor devices due to its wider band gap and higher thermal conductivity than those of Si and hence has great potential for power devices operating at high powers and high temperatures. The introduc...

